2SA1531A Search Results

Contextual Info: Product specification 2SA1531A Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -55 V Collector-emitter voltage VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531A • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531A • Features  Package  Low noise voltage NV  High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929, 2SC3929A Silicon NPN epitaxial planar type (0.425) Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚

2SC3929

Abstract: 2SA1531 2SA1531A 2SC3929A K8022
Contextual Info: Transistors 2SC3929, 2SC3929A Silicon NPN epitaxial planar type 0.425 Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ (0.65) (0.65) 2.0±0.2 Rating Unit VCBO 35 V 10˚ VCEO Emitter-base voltage (Collector open)

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A
Contextual Info: Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A Unit: mm • Features Collector to 2SA1531 Ratings –35 VCBO –35 0.3–0 0.65 1.3±0.1 0.65 V –55 Emitter to base voltage

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A Low-Frequency Low-Noise PNP transistor marking nv
Contextual Info: Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A Unit: mm • Features Collector to 2SA1531 Ratings –35 VCBO –35 0.3–0 0.65 1.3±0.1 0.65 V –55 Emitter to base voltage

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A 2SC3929, 2SC3929A
Contextual Info: Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planar type 0.425 Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Low noise voltage NV • High forward current transfer ratio hFE

2SA1531A

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SA1531A Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -55

riaa

Abstract: 2SC3929 2SA1531 2SA1531A 2SC3929A
Contextual Info: Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A Unit: mm • Features 2SC3929A Collector to 2SC3929 VEBO Peak collector current 35 0.3–0 0.65 +0.1 V 55 5 V ICP 100

2SC3929

Abstract: 2SC3929A 2SA1531 2SA1531A
Contextual Info: Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A Unit: mm • Features 2SC3929A Collector to 2SC3929 VEBO Peak collector current 35 0.3–0 0.65 +0.1 V 55 5 V ICP 100

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A 1531A
Contextual Info: Transistors 2SA1531, 2SA1531A Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A • Features 0.425 Unit: mm 0.15+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 2SA1531A

2SC3929S

Abstract: 2SA1531 2SA1531A 2SC3929 2SC3929A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929, 2SC3929A Silicon NPN epitaxial planar type (0.425) Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚

2SA1531A

Abstract: 2SC3929 2SC3929A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531A • Package  Low noise voltage NV  High forward current transfer ratio hFE

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A 1531A
Contextual Info: Transistors 2SA1531, 2SA1531A Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A • Features 0.3+0.1 –0.0 VCBO −35 V 5° −55 Emitter-base voltage Collector open 2.1±0.1 Unit VCEO

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A
Contextual Info: Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planar type 0.425 Unit: mm For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A 0.3+0.1 –0.0 0.15+0.10 –0.05 base voltage 2SA1531A Collector to emitter voltage 2SA1531

Contextual Info: Transistors 2SA1531, 2SA1531A Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A • Features 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 0.2±0.1 2

2SA1530

Abstract: 2sa1562 2SA1567 2sc3928 2SC4000 2SC4001 2SC4016 2SC4040 2SA1531 2SA1531A
Contextual Info: - 40 - < T a = 2 5 U * T O T c = 2 5 ‘i3 Sü 2SA1530 2SA1531 2SA1531A 2SA1532 2SA1533 2SA1534 2SA1534A 2SA1535 2SA1535A 2SA1536 2SAÌ537 2SA1538 2SA1539 2SA1540 2SA1541 2SA1544 2SA1545 2SA1546 2SA1547 2SA1548 2SA1549 2SA1550 2SA1552 2SA1553 2SA1554 2SA1555

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691