2SA192 Search Results

2SA192 Datasheets (33)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SA192	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.66KB	1
2SA192	Unknown	Cross Reference Datasheet	Scan	PDF	38.11KB	1
2SA192	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	104.55KB	2
2SA192	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	89.61KB	1
2SA192	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	91.8KB	1
2SA192	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.81KB	1
2SA1920	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	40.62KB	1
2SA1920	ROHM	ATR, ATV Transistors	Scan	PDF	200.06KB	2
2SA1920	ROHM	ATR / ATV Transistors	Scan	PDF	112.69KB	2
2SA1921	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	37.24KB	1
2SA1922	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	37.24KB	1
2SA1923	Kexin	Silicon PNP Transistor	Original	PDF	41.47KB	2
2SA1923	Toshiba	Silicon PNP Transistor	Original	PDF	106.67KB	4
2SA1923	Toshiba	PNP transistor	Original	PDF	197.3KB	4

2SA1923	TY Semiconductor	Silicon PNP Transistor - TO-252	Original	PDF	135.22KB	2
2SA1923	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	37.24KB	1
2SA1923	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	40.62KB	1
2SA1923	Toshiba	Silicon PNP transistor for high voltage switching applications	Scan	PDF	202.27KB	5
2SA1924	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor	Original	PDF	152.5KB	4
2SA1924	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	37.24KB	1

2SA192 Price and Stock

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SOURIAU-SUNBANK 21A35102SA-1924 Circular MIL Spec Backshells FITTING ASSEMBLY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	21A35102SA-1924					1 - 10 - 100 $138.57 1000 $138.57 10000 $138.57	Get Quote
RS	21A35102SA-1924	Bulk		16 Weeks	50	1 - 10 - 100 $121.77 1000 $117.88 10000 $117.88	Get Quote
PEI Genesis	21A35102SA-1924					1 $0.00 10 $0.00 100 $0.00 1000 $0.00 10000 $0.00	Buy Now
FDH Electronics	21A35102SA-1924				1	1 $210.29 10 $185.55 100 $168.98 1000 $157.72 10000 $152.63	Get Quote
Toshiba America Electronic Components 2SA1924(Q) TRANSISTOR (SILICON)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SA1924(Q)		180		1	1 - 10 - 100 $1.24 1000 $1.11 10000 $1.05	Buy Now

2SA192 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
a1924 transistor Abstract: A1924 2SA1924 Contextual Info: 2SA1924 TOSHIBA 2 S A 1 924 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SW ITCHING APPLICATIONS. • • High Voltage : V ç;e o = —400V Low Saturation Voltage : V qe sat = —IV (Max.) (IC = _ 100mA, IB = - 10mA) Collector Metal (Fin) is Fully Covered with Mold Resin	OCR Scan	2sa1924 --400v 100ma a1924 transistor +1a1924	PDF
Contextual Info: 2SA1924 TO SH IB A 2S A 1924 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. U n it in mm • High Voltage : V q e q = —400V • Low Saturation Voltage : V 3E (sat = —IV (Max.) (IC = _ 100mA, IB = - 10mA) • Collector Metal (Fin) is Fully Covered with Mold Resin	OCR Scan	2sa1924 100ma	PDF
2SA1924 Contextual Info: 2SA1924 TO SH IBA 2SA 1924 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage :V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA) Collector Metal (Fin) is Fully Covered with Mold Resin	OCR Scan	2sa1924	PDF
2SA1923 Abstract: A1923 Contextual Info: 2SA1923 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications • High voltage: VCEO = −400 V · Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) Maximum Ratings (Ta = 25°C)	Original	2sa1923 a1923	PDF
Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin	Original	2sa1925	PDF
2SA1920 Abstract: saj 100 Contextual Info: 2SA1920 Transistors 2SA1870 High-voltage switching Transistor Camera strobes and Telephone, Power supply I 2SA1920 • F e a tu re s 1) 2) 3) 4 ) • A b so lu te maximum ratings (Ta=25'C ) H igh breakdow n volts« . (V c eo — — 4 00 V ) Low VcE(saj). (Typ.— 0 .2 V at Ic/ie— — 20/— 2mA)'	OCR Scan	2sa1920 2sa1870 100ms ---100m +296-113-a325 saj 100	PDF
Contextual Info: 2SA1923 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications • High voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) Maximum Ratings (Ta = 25°C)	Original	2sa1923	PDF
2SA1923 Abstract: 2SA19 Contextual Info: 2SA1923 TOSHIBA 2 S A 1 923 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • High Voltage : V^ b q = —400 V Low Saturation Voltage : V qe sat — —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2sa1923 961001eaa1 2sa19	PDF
a1924 transistor Abstract: 2SA1924 A1924 a1924 datasheet 024 marking code Contextual Info: 2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.	Original	2sa1924 a1924 transistor a1924 a1924 datasheet +1024 marking code	PDF
2SA1925 Abstract: A1925 Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin	Original	2sa1925 a1925	PDF
a1924 transistor Abstract: 2SA1924 A1924 2sa192 Contextual Info: 2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.	Original	2sa1924 a1924 transistor a1924 2sa192	PDF
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	2sa817a 2sa940 2sa949 2sa965 +162sa966 2sa1012 2sa1013 2sa1020 2sa1145 2sa1160 2sc5200, 2sa1943, 2sc5198 gti5q101 2sc5039 2sc4532 2sd2088 2sc3303 2sc5200, 2sa1943 2sa1803 2sc4408 gt10g102	PDF
Contextual Info: 2SA1924 SILICON PNP TRIPLE DIFFUSED MESA TYPE U nit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. • • • $ 3.1 Í0.1 H igh Voltage : V q e O = _ 400V Low Saturation Voltage : V p E Sa t = —IV (Max.) (Ip = —100mA, Ij}= —10mA) Collector M etal (Fin) is Fully Covered with Mold Resin	OCR Scan	2sa1924 --100ma --10ma --400v +2--20ma --50ma	PDF
2SA1926 Contextual Info: 2SA1926 SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AM PLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE ( s a t ) = - 0 - 1 7 V (Max.) (IC = —1A) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2sa1926	PDF

a1926 Abstract: 2-7D101A 2SA1926 Contextual Info: 2SA1926 東芝トランジスタシリコンPNPエピタキシャル形 2SA1926 単位: mm ○ 電力増幅用 ○ 電力スイッチング用 • コレクタ飽和電圧が低い。: VCE sat = −0.17 V (最大) (IC = −1 A) 絶対最大定格 (Ta = 25°C)	Original	2sa1926 2-7d101a a1926 2002/95/ec	PDF
2SA1925 Contextual Info: TOSHIBA 2SA1925 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage : V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA) Collector Metal (Fin) is Fully Covered with Mold Resin	OCR Scan	2sa1925	PDF
2SA1923 Contextual Info: 2SA1923 TO SH IBA 2 S A 1 923 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS • • Unit in mm High Voltage : V ç j b o = -4 0 0 V Low Saturation Voltage : V qe sat — —1 V (Max.) ( I q = -1 0 0 mA, l g = -1 0 mA)	OCR Scan	2sa1923	PDF
2SA1925 Contextual Info: T O S H IB A 2SA1925 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage : V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA)	OCR Scan	2sa1925	PDF
Contextual Info: 2SA1925 TO SH IB A 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS U n it in mm • High Voltage : V c e q = —400V • Low Saturation Voltage : V0E sat = —^ (Max.) (Iq = —100mA, Ijj = —10mA) • Collector Metal (Fin) is Fully Covered with Mold Resin	OCR Scan	2sa1925 100ma	PDF
2SA1928 Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1928 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION _ SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1928 is a silicon PNP epitaxial type transistor. It is designed for low noise differential amplify application.	OCR Scan	2sa1928 -100v 270hz	PDF
2SA1923 Contextual Info: 2SA1923 TO SH IBA 2 S A 1 923 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • High Voltage : V ç j b o = -4 0 0 V Low Saturation Voltage : V qe sat — —1 V (Max.) ( I q = -1 0 0 mA, l g = -1 0 mA)	OCR Scan	2sa1923	PDF
Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin	Original	2sa1925	PDF
Contextual Info: TOSHIBA 2SA1924 2SA1924 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED MESA TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. • • U nit in mm 8.3 M A X , . S.8 . High Voltage : V c e q = -4 0 0 V Low Saturation Voltage : V Q E sat ~— (Max,) (Iq = — 100mA, 1b - —10mA)	OCR Scan	2sa1924 100ma --10ma	PDF
Contextual Info: 2SA1925 TOSHIBA 2 SA 1 9 2 5 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED MESA TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 8.0 ±0.2 • High Voltage : VCE O = -400V Low Saturation Voltage : V ^ e $at ~ — (Max.) • Collector Metal (Fin) is Fully Covered with Mold Resin	OCR Scan	2sa1925 -400v -40ition ----400v +6--10ma --20ma --100ma 100ma 100maf -200v	PDF

2SA192 Search Results

2SA192 Datasheets (33)

2SA192 Price and Stock

SOURIAU-SUNBANK 21A35102SA-1924

Toshiba America Electronic Components 2SA1924(Q)

2SA192 Datasheets Context Search

a1924 transistor

2SA1924

2SA1923

2SA1920

2SA1923

a1924 transistor

2SA1925

a1924 transistor

2sC5200, 2SA1943, 2sc5198

2SA1926

a1926

2SA1925

2SA1923

2SA1925

2SA1928

2SA1923