2SA192 Search Results

a1924 transistor

Abstract: A1924 2SA1924
Contextual Info: 2SA1924 TOSHIBA 2 S A 1 924 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SW ITCHING APPLICATIONS. • • High Voltage : V ç;e o = —400V Low Saturation Voltage : V qe sat = —IV (Max.) (IC = _ 100mA, IB = - 10mA) Collector Metal (Fin) is Fully Covered with Mold Resin

Contextual Info: 2SA1924 TO SH IB A 2S A 1924 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. U n it in mm • High Voltage : V q e q = —400V • Low Saturation Voltage : V 3E (sat = —IV (Max.) (IC = _ 100mA, IB = - 10mA) • Collector Metal (Fin) is Fully Covered with Mold Resin

2SA1924

Contextual Info: 2SA1924 TO SH IBA 2SA 1924 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage :V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA) Collector Metal (Fin) is Fully Covered with Mold Resin

2SA1923

Abstract: A1923
Contextual Info: 2SA1923 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications • High voltage: VCEO = −400 V · Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin

2SA1920

Abstract: saj 100
Contextual Info: 2SA1920 Transistors 2SA1870 High-voltage switching Transistor Camera strobes and Telephone, Power supply I 2SA1920 • F e a tu re s 1) 2) 3) 4 ) • A b so lu te maximum ratings (Ta=25'C ) H igh breakdow n volts« . (V c eo — — 4 00 V ) Low VcE(saj). (Typ.— 0 .2 V at Ic/ie— — 20/— 2mA)'

Contextual Info: 2SA1923 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications • High voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) Maximum Ratings (Ta = 25°C)

2SA1923

Abstract: 2SA19
Contextual Info: 2SA1923 TOSHIBA 2 S A 1 923 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • High Voltage : V^ b q = —400 V Low Saturation Voltage : V qe sat — —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA) MAXIMUM RATINGS (Ta = 25°C)

a1924 transistor

Abstract: 2SA1924 A1924 a1924 datasheet 024 marking code
Contextual Info: 2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.

2SA1925

Abstract: A1925
Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin

a1924 transistor

Abstract: 2SA1924 A1924 2sa192
Contextual Info: 2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

Contextual Info: 2SA1924 SILICON PNP TRIPLE DIFFUSED MESA TYPE U nit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. • • • $ 3.1 Í0.1 H igh Voltage : V q e O = _ 400V Low Saturation Voltage : V p E Sa t = —IV (Max.) (Ip = —100mA, Ij}= —10mA) Collector M etal (Fin) is Fully Covered with Mold Resin

2SA1926

Contextual Info: 2SA1926 SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AM PLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE ( s a t ) = - 0 - 1 7 V (Max.) (IC = —1A) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

a1926

Abstract: 2-7D101A 2SA1926
Contextual Info: 2SA1926 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1926 単位: mm ○ 電力増幅用 ○ 電力スイッチング用 • コレクタ飽和電圧が低い。: VCE sat = −0.17 V (最大) (IC = −1 A) 絶対最大定格 (Ta = 25°C)

2SA1925

Contextual Info: TOSHIBA 2SA1925 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage : V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA) Collector Metal (Fin) is Fully Covered with Mold Resin

2SA1923

Contextual Info: 2SA1923 TO SH IBA 2 S A 1 923 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS • • Unit in mm High Voltage : V ç j b o = -4 0 0 V Low Saturation Voltage : V qe sat — —1 V (Max.) ( I q = -1 0 0 mA, l g = -1 0 mA)

2SA1925

Contextual Info: T O S H IB A 2SA1925 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage : V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA)

Contextual Info: 2SA1925 TO SH IB A 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS U n it in mm • High Voltage : V c e q = —400V • Low Saturation Voltage : V0E sat = —^ (Max.) (Iq = —100mA, Ijj = —10mA) • Collector Metal (Fin) is Fully Covered with Mold Resin

2SA1928

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1928 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION _ SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1928 is a silicon PNP epitaxial type transistor. It is designed for low noise differential amplify application.

2SA1923

Contextual Info: 2SA1923 TO SH IBA 2 S A 1 923 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • High Voltage : V ç j b o = -4 0 0 V Low Saturation Voltage : V qe sat — —1 V (Max.) ( I q = -1 0 0 mA, l g = -1 0 mA)

Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin

Contextual Info: TOSHIBA 2SA1924 2SA1924 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED MESA TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. • • U nit in mm 8.3 M A X , . S.8 . High Voltage : V c e q = -4 0 0 V Low Saturation Voltage : V Q E sat ~— (Max,) (Iq = — 100mA, 1b - —10mA)

Contextual Info: 2SA1925 TOSHIBA 2 SA 1 9 2 5 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED MESA TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 8.0 ±0.2 • High Voltage : VCE O = -400V Low Saturation Voltage : V ^ e $at ~ — (Max.) • Collector Metal (Fin) is Fully Covered with Mold Resin