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    2SA1925 Search Results

    2SA1925 Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA1925
    Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TPS; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor Original PDF 150.01KB 4
    2SA1925
    Unknown Japanese Transistor Cross References (2S) Scan PDF 37.24KB 1
    2SA1925
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.62KB 1
    2SA1925
    Toshiba Silicon PNP transistor for high voltage switching applications Scan PDF 200.39KB 5
    2SA1925
    Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF 200.67KB 5

    2SA1925 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin


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    2sa1925 PDF

    2SA1925

    Abstract: A1925
    Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin


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    2sa1925a1925 PDF

    2SA1925

    Contextual Info: TOSHIBA 2SA1925 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage : V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA) Collector Metal (Fin) is Fully Covered with Mold Resin


    OCR Scan
    2sa1925 PDF

    2SA1925

    Contextual Info: T O S H IB A 2SA1925 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage : V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA)


    OCR Scan
    2sa1925 PDF

    Contextual Info: 2SA1925 TO SH IB A 2 S A 1 925 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS U n it in mm • High Voltage : V c e q = —400V • Low Saturation Voltage : V0E sat = —^ (Max.) (Iq = —100mA, Ijj = —10mA) • Collector Metal (Fin) is Fully Covered with Mold Resin


    OCR Scan
    2sa1925100ma PDF

    Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin


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    2sa1925 PDF

    Contextual Info: 2SA1925 TOSHIBA 2 SA 1 9 2 5 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED MESA TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 8.0 ±0.2 • High Voltage : VCE O = -400V Low Saturation Voltage : V ^ e $at ~ — (Max.) • Collector Metal (Fin) is Fully Covered with Mold Resin


    OCR Scan
    2sa1925-400v-40ition----400v+6--10ma--20ma--100ma100ma100maf-200v PDF

    Contextual Info: TOSHIBA 2SA1925 2 S A 1 925 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • High Voltage : V^ e q - -4 0 0 V Low Saturation Voltage : V qe sa^ = —1 V (Max.) (IC = -1 0 0 mA, IB = -1 0 mA)


    OCR Scan
    2sa1925 PDF

    2SA1925

    Abstract: A1925
    Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO


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    2sa1925a1925 PDF

    2SA1925

    Contextual Info: 2SA1925 TO SHIBA 2 S A 1 925 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SW ITCHING APPLICATIONS • • High Voltage : V ç;e o = —400V Low Saturation Voltage : V q e sat ——IV (Max.) (IC = _ 100mA, IB = - 10mA) Collector Metal (Fin) is Fully Covered with Mold Resin


    OCR Scan
    2sa1925--400v100ma PDF

    Contextual Info: 2SA1925 SILICON PNP TRIPLE DIFFUSED MESA TYPE U nit in mm HIGH V O LTAG E SW ITCHING APPLICATIONS. • • • High Voltage : V c e O = _ 4 00V Low Saturation Voltage : V q e sat = —IV (Max.) (Iq = —100mA, Ig = —10mA) Collector M etal (Fin) is Fully Covered with Mold Resin


    OCR Scan
    2sa1925--100ma--10ma--50ma+1--10v PDF

    2SA1925

    Abstract: A1925
    Contextual Info: 2SA1925 東芝トランジスタ シリコンPNP三重拡散形 2SA1925 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −400 V 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


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    2sa1925a1925 PDF

    2SA1925

    Abstract: A1925
    Contextual Info: 2SA1925 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1925 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin


    Original
    2sa1925a1925 PDF

    2SA1925

    Abstract: A1925
    Contextual Info: 2SA1925 東芝トランジスタ シリコンPNP三重拡散形 2SA1925 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −400 V 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


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    2sa192520070701-jaa1925 PDF

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan
    2sa817a2sa9402sa9492sa965+162sa9662sa10122sa10132sa10202sa11452sa11602sc5200, 2sa1943, 2sc5198gti5q1012sc50392sc45322sd20882sc33032sc5200, 2sa19432sa18032sc4408gt10g102 PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


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    bce0016ce-28831bce0016dsmd transistor h2a+9smd transistor h2a npntransistor smd h2a2sa1943 amplifier circuit diagramtpcp8l012sc5200, 2sa1943h2a transistor smd2sc5200 power amplifiers diagrammarking smd pnp transistor h2asmd h2a PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    t258-omifax062sc1442sd466+12sc5266 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    bce0016f2sa1941 amp circuit2sc33032sd880+7to3p package2sa114smd transistor h2a2sb834amplifier circuit using 2sa1943 and 2sc5200toshiba bipolar power transistoramplifier design tta1943 PDF

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


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    ttc003sc-64bcj0016fbcj0016e+92sc5200, 2sa1943tpcp8l01tpcp86022sc5200 2sa19432sc52002sc4793 2sa18372sc5200, 2sa1943, 2sc5198ttc13003l2sc3180n PDF

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Contextual Info: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


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    dp0540001200khz280nstransistor 2sc5353+92sa2035transistor smd 13wha2003bjt 60 w 600v .5apnp transistor 800vtpc6d02vs6 sot23400v dvc to 5v dc regulatormstm toshiba PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    sc-63/64sc-62sc-59ot-23+162sa14832sc38032sa14262sa12042sa17342sa20652sa1930 2sc5171tpc8107 equivalenttpc8107 application circuit2sc4157 equivalent2sa1930 transistor equivalent2sa949 equivalent2sd880 equivalentequivalent 2sc52002sk2865 equivalentmarking 4d npn PDF

    2SC4793 2sa1837

    Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
    Contextual Info: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688


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    2sc1627a2sa817a2sc22352sa965+162sc36652sa14252sc51742sa19322sc34232sa13602sc4793 2sa1837100 amp npn darlington power transistors2sc5200, 2sa194310 amp npn darlington power transistors2sc5200, 2sa1943, 2sc51982sc4684 datasheets2sa1930 transistor equivalent2sc52002sb906-y2sc3303 PDF