2SA1926 Search Results

2SA1926

Contextual Info: 2SA1926 SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AM PLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE ( s a t ) = - 0 - 1 7 V (Max.) (IC = —1A) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

a1926

Abstract: 2-7D101A 2SA1926
Contextual Info: 2SA1926 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1926 単位: mm ○ 電力増幅用 ○ 電力スイッチング用 • コレクタ飽和電圧が低い。: VCE sat = −0.17 V (最大) (IC = −1 A) 絶対最大定格 (Ta = 25°C)

Contextual Info: 2SA1926 TOSHIBA 2 S A 1 926 TO S H IB A TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SW ITCHING APPLICATIONS. 7.1 M AX. 2.7M A X . • Low Collector Saturation Voltage : VCE ( s a t ) = -0.17V (Max.) (IC= -1 A )

2SA1926

Abstract: 2-7D101A
Contextual Info: 2SA1926 TO SHIBA 2 S A 1 926 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SW ITCHING APPLICATIONS. 7.1 MAX. • 2.7MAX. Low Collector Saturation Voltage : VCE (sat)~ —0.17V (Max.) (IC= -1 A )

2-7D101A

Abstract: 2SA1926 A1926
Contextual Info: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Absolute Maximum Ratings (Ta = 25°C)

2-7D101A

Abstract: 2SA1926
Contextual Info: 2SA1926 TO SH IBA 2 S A 1 926 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X • Low Collector Saturation Voltage • \T n -n = _ n 17V 1.0 fM a y 'l ( T n = _ 1 A'l

2SA1926

Abstract: 2-7D101A
Contextual Info: 2SA1926 TO SH IBA 2 S A 1 926 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS. 7.1 M A X. • Low Collector Saturation Voltage • \T n -n = _ n 17V 1.0 3.2 fM a y 'l ( T n = _

transistor a017

Contextual Info: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Maximum Ratings (Ta = 25°C) Characteristics

2-7D101A

Abstract: 2SA1926 A1926 toshiba pb includes
Contextual Info: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: Unit: mm VCE (sat) = −0.17 V (max) (IC = −1 A) Absolute Maximum Ratings (Ta = 25°C)

2-7D101A

Abstract: a1926 2SA1926
Contextual Info: 2SA1926 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1926 ○ ソレノイドドライブ用 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE sat = −0.17 V (最大) (IC = −1 A)

a1926

Abstract: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type 2-7D101A
Contextual Info: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA 2SA1926 2 S A 1 926 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS. 7.1 M A X • 2.7MAX, Low Collector Saturation Voltage : VCE (sat)~ —0.17V (Max.) (IC = -1 A )

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y