2SA1314 Search Results

Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Unit: mm Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)

smd transistor 2A

Abstract: smd transistor MARKING 2A 2SA1314 2SC2982
Contextual Info: Transistors SMD Type Audio Power Applications 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter

Contextual Info: TO SHIBA 2SA1314 2 S A 1 314 TO S H IB A TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER APPLICATIONS 1.6M AX. 4.6MAX. — J- - 1.7M AX. • High DC Current Gain and Excellent Linearity • Low Saturation Voltage

2SA1314

Abstract: 2SC2982
Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = −1 V, IC = −4 A)

2SA1314

Abstract: A1314 J-21
Contextual Info: 2SA1314 TO SH IBA 2 S A 1 314 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO PO W ER APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. 0.4 +0.05 High DC Current Gain and Excellent Linearity • V i t /-•X = 1 A O - R O O ( \ T n - n = _ 1 V

Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)

Contextual Info: SMD Type Product specification 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -20

2SA1314

Abstract: 2SC2982
Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)

Contextual Info: 2SA1314 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS M T M m • M T ■ ■ Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER APPLICATIONS l.G M A X . 4 .6 M A X . 1 .7 M A X . High DC Current Gain and Excellent Linearity * ViTvmy/i± ^) zz 14.0-^finn rVrm

Contextual Info: SILICON PNP EPITAXIAL TYPE TRANSISTOR 2SA1314 STROBO FLASH APPLICATIONS. Unit in AUDIO POWER APPLICATIONS. 4.6 MAX. 1.7 MAX. P 3- FEATURES: . High DC Current Gain and Excellent Linearity : hFE D = 1 4 0 ~ 6 0 0 1.6 MAX. Û 4±Q 05 (VCE=-1V, Ic=-0.5A : hFE(2)=60 (Min.), 120 (Typ.), (VCE=-1V, IC=-4A)

2SA1314

Contextual Info: 2SA1314 TOSHIBA 2 S A 1 314 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO PO W ER APPLICATIONS • High DC Current Gain and Excellent Linearity : h F E (1) = 140-600 (V CE = - IV, Ie = -0.5A) : hjpE (2) = 60 (Min.), 120 (Typ.), (VCE= -1 V , IC= -4 A )

2SA1314

Abstract: A1314 J-21 A1314 transistor
Contextual Info: 2SA1314 TOSHIBA 2 S A 1 314 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. • High DC Current Gain and Excellent Linearity ViTvm m *= * ’ 9 ~~rüí / i \ — 1 Af)* w'/v/ (VV’ V^üí

2SA1314

Abstract: A131 Transistor A131
Contextual Info: T O S H IB A 2SA1314 2 S A 1 314 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO PO W ER APPLICATIONS • High DC Current Gain and Excellent Linearity : hFE (1) = 140-600 (V c e = - I V , I c = -0 .5 A ) : hF E (2) = 60(M in.), 120 (Typ.), (VCE= _ 1 V , I c = - 4 A )

2SA1314

Abstract: 2SC2982
Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)

D marking amplifier

Abstract: smd transistor 2A MARKING 2A smd 2a transistor SMD MARKING 2a smd transistor MARKING 2A 2SA1314 2SC2982 smd Amplifier marking 420
Contextual Info: Transistors SMD Type Medium Power Amplifier Applications 2SC2982 Features Low Saturation Voltage : VCE sat = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

2SA1314

Abstract: 2SC2982
Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y

Contextual Info: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

2SC3301

Abstract: 2sa120 2SC2880
Contextual Info: llll Powered by 2 POWER MINI PACKAGE SERIES (S0T-89) ICminer.com Electronic-Library Application Pc * Mounted on ceramic substrat? of 250mma x 0.8mm v CE0 >C Pc PC* (V) (A) (W) (W) hFE Typo No. NPN PNP f-j- TYP. v CE(sat) M A X - V CE ic •c •b V CE >E

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)