2SC2982 Search Results

smd transistor 2A

Abstract: smd transistor MARKING 2A 2SA1314 2SC2982
Contextual Info: Transistors SMD Type Audio Power Applications 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter

2SC2982

Contextual Info: TO SHIBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6 M AX — 1.7MAX. • High DC Current Gain and Excellent hpg Linearity 0.4 ±0.05 t t - : hFE (1) = 140-600 (Vce = IV, Ie = 0.5A)

E5 ou ic

Abstract: 2SC2982
Contextual Info: TO SH IB A 2SC2982 T O S H IB A TRA N SISTO R SILICON NPN EPIT A X IA L TY PE PCT PROCESS 2SC2982 Unit in mm STO RO BO FLASH A PPLIC A TIO N S M E D IU M P O W E R A M P LIF IE R A PPLIC A TIO N S 1.6 M AX —J- • 1.7MAX. High DC Current Gain and Excellent hpg Linearity

2SC2982

Abstract: 2SA1314
Contextual Info: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)

Contextual Info: SMD Type Product specification 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -20

2SA1314

Abstract: 2SC2982
Contextual Info: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)

Contextual Info: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)

Contextual Info: T O S H IB A 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 U nit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6MAX —J— 1.7MAX. • High DC Current Gain and Excellent hjnE Linearity 0.4 ±0.05

2SC2982

Abstract: marking sc-62 cj
Contextual Info: TO SH IBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS 1.6 MAX. 4.6 MAX. • • • • 1.7MAX. High DC Current Gain and Excellent hjpg Linearity : hFE (1) = 140-600 (V ce = IV, Ie = 0.5A)

2SA1314

Abstract: 2SC2982
Contextual Info: 2SC2982 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2982 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高くリニアリティが優れています。 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)

2SA1314

Abstract: 2SC2982
Contextual Info: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)

2SC2978

Abstract: 2SC2936 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933 2SC2936H 2SC2941
Contextual Info: - 140 - Ta=25?C 1*EP(àTc=25‘1C M 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2946(1) 2SC2949 2SC2950 2SC2951 2SC2952 2SC2953 2SC2954 2SC2958 2SC2959 2SC296Ö 2SC2964 2SC2965 2SC2975 2SC2976 2SC2977 2SC2978 2SC2979 2SC2981 2SC2982 2SC2983

2SC2982

Abstract: 2SA1314 jeita sc-62
Contextual Info: 2SC2982 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2982 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高くリニアリティが優れています。 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)

2SA1314

Abstract: 2SC2982
Contextual Info: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)

D marking amplifier

Abstract: smd transistor 2A MARKING 2A smd 2a transistor SMD MARKING 2a smd transistor MARKING 2A 2SA1314 2SC2982 smd Amplifier marking 420
Contextual Info: Transistors SMD Type Medium Power Amplifier Applications 2SC2982 Features Low Saturation Voltage : VCE sat = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

2SC2982

Contextual Info: TOSHIBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS 1.6 MAX. 4.6 MAX. 1.7MAX. • 0.4 ±0.05 High DC Current Gain and Excellent hjpg Linearity : hFE (1 ) = 140-600 (V ce = IV, Ie = 0.5A)

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y

2SA1314

Abstract: 2SC2982
Contextual Info: 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)

ir131

Contextual Info: TOSHIBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6 M A X 4.6 M A X . • 1.7 M A X High DC Current Gain and Excellent hjrg Linearity : hFE (1) = 140-600 (VCE = IV, IC = 0.5A)

Contextual Info: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Unit: mm Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)

Contextual Info: T O SH IB A TENTATIVE TA8302F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 8302F MOTOR DRIVER FOR CAMERA TA8302F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and FreeWheeling diode. This 1C is suitable for a camera use motor drive

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732