2SC3670 Search Results

2SC3670 Datasheets (20)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC3670	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: MSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1430	Original	PDF	119.06KB	4
2SC3670	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.57KB	1
2SC3670	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	32.55KB	1
2SC3670	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	89.59KB	2
2SC3670	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.34KB	1
2SC3670	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	45.08KB	1
2SC3670	Toshiba	Silicon NPN transistor for strobo flash applications and medium power amplifier applications	Scan	PDF	180.5KB	3
2SC3670	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF	180.84KB	3
2SC3670A	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.57KB	1
2SC3670A	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF	99.91KB	2
2SC3670-A	Toshiba	Strobe Flash Apps	Scan	PDF	180.5KB	3
2SC3670B	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.57KB	1
2SC3670B	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF	99.91KB	2
2SC3670-B	Toshiba	Strobe Flash Apps	Scan	PDF	180.5KB	3

2SC3670C	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.57KB	1
2SC3670C	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF	99.92KB	2
2SC3670-C	Toshiba	Strobe Flash Apps	Scan	PDF	180.5KB	3
2SC3670D	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.57KB	1
2SC3670D	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF	99.92KB	2
2SC3670-D	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF	180.5KB	3

2SC3670 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2-7D101A Abstract: 2SC3670 Contextual Info: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS -iS-, 7.1 M A X • • High DC Current Gain and Excellent hjpE Linearity hjrE (1) —140—600	OCR Scan	2sc3670 2-7d101a	PDF
2-7D101A Abstract: 2SC3670 Contextual Info: TO SH IB A 2SC3670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM PO W ER AM PLIFIER APPLICATIONS • 7.1 M AX High DC Current Gain and Excellent hpg Linearity : hpE (i) = 140~600 : hFE(2) = 70 (Min.), 200 (Typ.)	OCR Scan	2sc3670 961001eaa2 2-7d101a	PDF
2-7D101A Abstract: 2SC3670 Contextual Info: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 7.1 MAX • • High DC Current Gain and Excellent hEE Linearity hEE (1) —140—600 ^FE (2) “ 70 (Min.), 200 (Typ.)	OCR Scan	2sc3670 2-7d101a	PDF
2-7D101A Abstract: 2SC3670 Contextual Info: TOSHIBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • • 7.1 MAX High DC Current Gain and Excellent hpE Linearity : ^FE (1) —140—600 : hFE( 2 ) = ?0 (Min.), 200 (Typ.)	OCR Scan	2sc3670 961001eaa2 2-7d101a	PDF
C3670 Abstract: 2-7D101A 2SC3670 Contextual Info: 2SC3670 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3670 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高くリニアリティ良好: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準),	Original	2sc3670 2-7d101a 20070701-ja c3670	PDF
2-7D101A Abstract: 2SC3670 C3670 Contextual Info: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)	Original	2sc3670 2-7d101a c3670	PDF
2-7D101A Abstract: 2SC3670 C3670 Contextual Info: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.)	Original	2sc3670 2-7d101a c3670	PDF
c3670 Abstract: 2SC3670 2-7D101A Contextual Info: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)	Original	2sc3670 c3670 2-7d101a	PDF
Contextual Info: T O SH IB A 2SC3670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 7.1 MAX • • High DC Current Gain and Excellent hjrg Linearity : hjp;E (i) = 140~600 : hFE(2) = 70 (Min.), 200 (Typ.)	OCR Scan	2sc3670 961001eaa2	PDF
2SC4793 2sa1837 Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y	Original	2sa2058 2sa1160 2sc2500 2sa1430 +162sc3670 2sa1314 2sc2982 2sc5755 2sa2066 2sc5785 2sc4793 2sa1837 2sc5200, 2sa1943, 2sc5198 2sc5200, 2sa1943 transistor 2sa2060 power transistor npn to-220 2sc5198 equivalent transistor 2sc5359 2sc5171 transistor equivalent npn transistor	PDF
Contextual Info: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)	Original	2sc3670	PDF
C3670 Abstract: 2-7D101A 2SC3670 Contextual Info: 2SC3670 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3670 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高くリニアリティ良好: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準),	Original	2sc3670 2-7d101a c3670	PDF
Contextual Info: TOSHIBA 2SC3670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC367Q Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • 7.1 MAX High DC Current Gain and Excellent hjrE Linearity : ^FE (1) = 140—600 : hFE(2) = 70 (Min.), 200 (Typ.)	OCR Scan	2sc3670 2sc367q 961001eaa2	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004l ttc4116 2sc4118 tta1586 +162sa1588 2sc4117 2sa1587 2sc5233 2sc4738 2sa1832 gt30f131 gt30f124 tk18a60v smd m5 transistor 6-pin smd transistor h2a npn gt50n322 marking smd pnp transistor h2a gt30j124 30f124 tpcp8r01	PDF

70H40 Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©	OCR Scan	2sa1162 2sa1163 2sc1815 2sa1015 +162sc2458 2sc2459 2sa1048 2sa1049 2sc2712 2sc2713 70h40 transistor equivalent d2012 2sc734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk for low noise audio amplifier applications 2sa970 bl equivalent 2sa776 gr	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	bce0016d 2sc5200, 2sa1943 2sa1941 equivalent 2sc5353 equivalent +72sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2sc2383 equivalent tpcp8l01 2sa1962 equivalent 2sc4793 2sa1837 2sa1013 equivalent	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2sa949u50vi 2ac2229 2sa1145u50v 2sc2705 +162sc2230 2sa817a 2sc1627a 2sa1811 2sc4707 2sa965 15j102 transistor 2sc4288a transistor 2sa 2sb 2sc 2sd drive ic 2sc3346 2sa 102 transistor transistor 2sa 101 50j301 02sc5030 t15j103 driver ic 2sc3346	PDF
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	2sa817a 2sa940 2sa949 2sa965 +162sa966 2sa1012 2sa1013 2sa1020 2sa1145 2sa1160 2sc5200, 2sa1943, 2sc5198 gti5q101 2sc5039 2sc4532 2sd2088 2sc3303 2sc5200, 2sa1943 2sa1803 2sc4408 gt10g102	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	bce0016c e-28831 bce0016d smd transistor h2a +9smd transistor h2a npn transistor smd h2a 2sa1943 amplifier circuit diagram tpcp8l01 2sc5200, 2sa1943 h2a transistor smd 2sc5200 power amplifiers diagram marking smd pnp transistor h2a smd h2a	PDF
2SC144 Abstract: 2SD466 2sc5266 Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	t258-omi fax06 2sc144 2sd466 +12sc5266	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9sce0004k sc-43 2sc1815 700the +10gt30f124 tpcp8r01 gt30j124 japanese 2sc transistor 2010 smd transistor h2a smd marking 8l01 tk25e06k3 gt45f122 gt30g124 gt30f123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	sc-43 2sc1815 tps615 tps616 +11tps610 transistor bc 245 247y smd transistor h2a gt30g122 gt35j321 gt45f123 marking smd pnp transistor h2a gt45f122 gt45f122 series gt30f122	PDF
2sd2396 Abstract: 2SD2005 2SC4614 2SD1547 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650 Contextual Info: - ü £ T y p e No. / 2SD 2337 fö T te t te t te t s a 2SD 2338 □ — a t 2SD 2333 2SD 2334 ^ 2SD 2335 ^ 2SD 2336 / M anu f. « h m SANYO M TOSHIBA =£ « B HITACHI ÍI 2SD143Î 2SD23D0 2SD1878 2SD1545 2SD2311 2SD2252 2SD1547 2SC4744 2SD2251 2SD1547 2SC2882	OCR Scan	2sd2333 2sd1884 2sd1878 2sd2252 +142sd2251 2sd143 2sd1545 2sd1547 2sd1587 2sd2396 2sd2005 2sc4614 2sd1554 2sd2004 2sc4290a 2sc4814 2sc4040 2sd1650	PDF
2sc4496a Abstract: 2SD3181 2Sc3246 2sc3928 2SC3209 4468 2SC2644 2SD1404 2SD773 2sc3514 Contextual Info: - SI « T y p e No. tt « Manuf. Z i# SANYO it 2? TOSHIBA ÌL 2SC4403 ÎL 2SC4854 2SC2644 2 SC 4468 ^ V- v i r v 2SD1047 2SC3182N 2SC 4469 * ± S 1 * 2SC 4470 * 2SC 4472 n —U — :í¿ 2SC 4473 _ 2SC 4474 3 # 2SC 4477 h m NEC HITACHI 2SC4478 ± Ä F U JITSU	OCR Scan	2sc4403 2sc4187 2sc4854 2sc2644 +152sd1047 2sc3182n 2sc2989 2sc4278 2sc3307 2sc3508 2sc4496a 2sd3181 2sc3246 2sc3928 2sc3209 4468 2sd1404 2sd773 2sc3514	PDF

2SC3670 Search Results

2SC3670 Datasheets (20)

2SC3670 Datasheets Context Search

2-7D101A

2-7D101A

2-7D101A

2-7D101A

C3670

2-7D101A

2-7D101A

c3670

2SC4793 2sa1837

C3670

GT30F131

70H40

2sC5200, 2SA1943

15J102

2sC5200, 2SA1943, 2sc5198

smd transistor h2a

2SC144

GT30F124

transistor bc 245

2sd2396

2sc4496a