2SD2118 Search Results

2SB1412

Abstract: 2SB1326 2SB1386 2SD2118 T100 DPACK2
Contextual Info: 2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product Features 1 Low VCE sat). D-Pack 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 2.3 0.2 0.1 0.5 0.1 0.1 VCEO −20 V Emitter-base voltage

transistor d2118

Abstract: D2118 D2118 transistor
Contextual Info: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D2118-*Q, where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.3 V for

d204 transistor

Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD2118 TRANSISTOR NPN TO-252 FEATURES z Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) z Excellent DC Current Gain Characteristics. 1.BASE 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2522p

Abstract: 2SD2118
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2Plastic-Encapsulate Transistors 2SD2118 TO-252-2 6. 50¡ À 0 . 15 2. 30¡ À 0 . 10 5. 30¡ À 0. 10 TRANSISTOR NPN 0. 51¡ À 0 . 05 5¡ ã 5¡ ã 0. 6 2. 30¡ À 0 . 10 W (Tamb=25℃) 0¡ ¡ ã«

Q451

Abstract: 143ES 144ESA 2SB1616 2SD2478 96-229-D 124ES 114ES 2sD 313 2SD 388 A
Contextual Info: Transistors LOW VcE sat Trsnsistoffstrobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F e a tu re s 1) Low VcE(sat). V cE M = 0 .2 5 V (Typ.) (Ic / I b 2) •E x t e r n a l dim ensions (Units: mm) 2SD2098 18±0.1 r—-I = 4 A /0 .1 A ) r~fi Excellent D C current gain charac­

2SD2118

Abstract: land pattern SC63 2SB1326 2SB1386 2SB1412 2SD2097 2SD2098 T100 50m01 pw 005
Contextual Info: 2SD2098 / 2SD2118 / 2SD2097 Transistors Low VCE sat transistor (strobe flash) 2SD2098 / 2SD2118 / 2SD2097 !External dimensions (Units : mm) 2SD2098 4.0±0.3 0.5±0.1 4.5 +0.2 −0.1 1.0±0.2 (1) (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 +0.1 0.4−0.05 0.4±0.1

TO-252-2L

Abstract: to2522l
Contextual Info: 2SD2118 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) Excellent DC current gain characteristics. TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: 2SD2098 / 2SD2118 / 2SD2097 Transistors Low VCE sat transistor (strobe flash) 2SD2098 / 2SD2118 / 2SD2097 !External dimensions (Units : mm) 2SD2098 4.0±0.3 0.5±0.1 4.5 +0.2 −0.1 1.0±0.2 (1) (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 +0.1 0.4−0.05 0.4±0.1

Contextual Info: Low VCE sat transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type

2sd2166

Abstract: oc sc62
Contextual Info: T r a n s is to r s • 7 f l 2 f l 1 1 cì O G lbTG a b lT ■ LOW VcE sat TrànSÌStOr(Strobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 #F eatures 1) •E x te rn a l dimensions (Units: mm) LOW VcE(sat). VcE(sat) (I c / I b = 0.25V (Typ.) 2SD2098 = 4A/0.1A)

E50U

Abstract: 2SD2118 DPAC
Contextual Info: 2SD2118 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product D-Pack 6. 50Ć0. 15 FEATURES 2. 30Ć0. 10 5. 30Ć0. 10 C 0. 51Ć0. 05 0. 51Ć0. 10 1. 20 0. 75Ć0. 10 0Ć0. 10 5 5 1. 60Ć0. 15 0. 6 0. 80Ć0. 10 0. 60Ć 0. 10

2SD2118

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SD2118 TRANSISTOR NPN TO-251 TO-252-2L FEATURES z Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) z Excellent DC current gain characteristics. 123

2SD2118

Abstract: 2SD2118F5 T200 T201
Contextual Info: h ~7 > v 7 s £ /Transistors 9 Q n 9 1 A ft • 1 ° " 2SD2118F5 ^ Epitaxial Planar NPN Silicon Transistor fcW âiW tiW fàf& /\jyN Freq. Power Amp. X h P < K 7 7 7 y j.ffl/S tro b o Flash. • W ß v jsH/Dimensions Unit : mm • fc £ 1) VcE(sat) # '•(£^ 0

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SD2118 TRANSISTOR NPN TO-251 TO-252-2L FEATURES ∙ Low VCE=0.25V(Typ) 123 ∙ Excellent Dc current gain characteristics 1.BASE 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted

2SD2118

Contextual Info: Transys Electronics L I M I T E D TO-252-2Plastic-Encapsulated Transistors 2SD2118 TO-252-2 6. 50¡ À 0 . 15 2. 30¡ À 0 . 10 5. 30¡ À 0. 10 TRANSISTOR NPN 0. 51¡ À 0 . 05 5¡ ã 5¡ ã 0. 6 2. 30¡ À 0 . 10 W (Tamb=25℃) 0¡ ¡ ã« 9¡ ã 0. 51

2SD2118

Abstract: 2SB1412
Contextual Info: Low frequency transistor −20V,−5A 2SB1412 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. 2SB1412 zStructure Epitaxial planar type

2SB1412

Abstract: 2SD2118
Contextual Info: Low VCE sat transistor (strobe flash) 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. 2SD2118 zStructure Epitaxial planar type

2SD2118

Contextual Info: SPICE PARAMETER 2SD2118 by ROHM TR Div. * 2SD2118 NPN BJT model * Date: 2006/11/14 .MODEL 2SD2118 NPN + IS=700.00E-15 + BF=239.68 + VAF=3.5571 + IKF=15.353 + ISE=700.00E-15 + NE=1.6035 + BR=88.202 + VAR=100 + IKR=.35583 + ISC=228.00E-12 + NC=1.6682 + NK=.81465

2SD2118

Contextual Info: 2SD2118 2SD2118 TO-252-2 6. 50¡ À 0 . 15 2. 30¡ À 0 . 10 5. 30¡ À 0. 10 TRANSISTOR NPN 0. 51¡ À 0 . 05 5¡ ã À. 10 5. 50¡ 0 0¡ 0 « . 10 5¡ ã 5¡ ã 0. 6 0. 80¡ À 0. 10 1. BASE 2. 30¡ À 0 . 10 0¡ ¡ ã« 9¡ ã 0. 51 À. 20 2. 70¡ 0 0. 60¡ À

Contextual Info: Transistors IC SMD Type Product specification 2SD2118 TO-252 Features +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28

2SD209B

Contextual Info: Transistors Low VcE sat Transist0r(strobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F eatu re s 1) •E xte rn a l dimensions (Units: mm) L O W VcE(eat). VcE(sat) = 0.25V (Typ.) ( I c / I b = 4A/0.1 A) 2) Excellent DC current gain charac­ teristics. 3) Complements the

transistor d2118

Contextual Info: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2118*Q , where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • 2SD2118F5 (CPT F5) 6.5 ± 0.2 2.3

transistor

Abstract: B204 2SB1412 2sb1386 2SD2098 hFE is transistor 2SD2166 2SB1436 2SB1326 data sheet transistor PNP
Contextual Info: Transistors Low Frequency Transistor *20V,*5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.