2SB1386 Search Results

transistor smd bh

Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

Contextual Info: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)

Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )

bhr sot-89

Contextual Info: WILLAS FM120-M+ 2SB1386 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process TRANSISTOR PNP design, excellent power dissipation offers

marking BHR

Abstract: marking 4a sot-89 SOT89 transistor marking 4A BHR SOT89 bhr sot-89 TRANSISTOR br bhr marking 05 SOT 89 4A SOT89 2SB1386 sot 89 transistor
Contextual Info: 2SB1386 SOT-89 Transistor PNP 1. BASE SOT-89 1 2. COLLECTOR 2 4.6 4.4 1.8 1.4 1.6 1.4 3 3. EMITTER B 2.6 4.25 2.4 3.75 Features — — 0.8 MIN Low collector saturation voltage, Execllent current-to-gain characteristics 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor p86

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1386PPT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)

Contextual Info: 2SB1386 PNP SILICON TRANSISTOR LOW FREQU EN CY PN P T RAN SI ST OR 1 ̈ FEAT U RES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ̈ SOT-89 ORDERI N G I N FORM AT I ON Order Number Lead Free Halogen Free

2sb132

Abstract: 2SB1326 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100
Contextual Info: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 zExternal dimensions (Unit : mm) 2SB1412 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 C0.5 0.65±0.1 0.75 0.55±0.1 0.4±0.1 1.5±0.1 2.3±0.2

2SB1386

Abstract: MARKING PB SOT-89 bhr sot-89 SOT-89 marking 5k
Contextual Info: 2SB1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER Features: 1 2 3 SOT-89 * Excellent DC Current Gain Characteristics * Low VCE(Sat) Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Symbol Value

Contextual Info: HOE D ROHM CO LTD n □ □ □ ¿ b lS S BBRHM 2SB1306/2SB1307M/2SB1326/2SB1386 /T ra n s is to rs 7^27-21 S B 1 3 S / 2 S B 1 3 7 2 S 3 1 3 2 3 / 2 5 3 1 3 S S 7 tl7 - Z IV 3 VhJJVSVvJI-r 2 m m m t i m m m / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors

Contextual Info: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A

d204 transistor

Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /

Contextual Info: 2SB1386-P MCC TM Micro Commercial Components 2SB1386-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1386-R Features x x • • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage

Contextual Info: 2SB1386-P MCC TM Micro Commercial Components 2SB1386-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1386-R Features x x • • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage

transistor p86

Abstract: transistor p86 sot-89 v5000 p86 marking
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1386PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * * * * SC-62/SOT-89 Small flat package. SC-62/SOT-89 Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)

2SB1386

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L ORDERING INFORMATION

2SB1436

Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2SB1386/2SB1412/2SB1326/2SB1436 • F e a tu re s 1) •E xtern a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = —0.35V (Typ.) (I c / I b = -4 A / -0 .1 A ) 2) Excellent D C current gain charac­ teristics.

2SB1386PGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1386PGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)

2SB1386GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1386GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * * * * SC-62/SOT-89 Small flat package. SC-62/SOT-89 Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)

Contextual Info: SOT-89 Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR PNP FEATURES ∙ Low collector saturation voltage,typically VCE(sat)=-0.35V ∙ Execllent current-to-gain characteristics MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units

Contextual Info: 2SB1386 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SB1386

Contextual Info: 2SB1386 Epitaxial Planar Transistor PNP Silicon COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -20

2SB1386U

Abstract: ST2SB1386U
Contextual Info: ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC

marking BHR

Abstract: marking BHp SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1386 TRANSISTOR PNP FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)