TO2522L Search Results

2SD1758

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors 2SD1758 z TRANSISTOR NPN TO-251 TO-252-2L FEATURES Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1412

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Regulators CJ78M05 Three-terminal positive voltage regulator TO-251-3L TO-252-2L FEATURES Maximum output current IOM: 0.5 A Output voltage VO: 5V Continuous total dissipation

TO-251 Package

Abstract: SPN8882 SPN8882T251T SPN8882T252R 5V GATE TO SOURCE VOLTAGE MOSFET TO-251 Outline TO-252 N-channel MOSFET
Contextual Info: SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall

MOSFET 20V 80A

Abstract: STN410D MOSFET, Enhancement, N Channel, 30V
Contextual Info: STN4 10 STN410 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using

STN454D

Abstract: 100A Mosfet Stanson Technology STN454 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR uis test APD50 MOSFET 20V 100A MOSFET 20V 120A 5025W
Contextual Info: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using

STP413D

Abstract: TO-252 MOSFET p channel p channel enhancement mosfet P channel MOSFET 10A 115td MOSFET 20V 120A p channel power trench mosfet uis test p channel mosfet 10a 20v STP41
Contextual Info: STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR（NPN） FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251-3L TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors CJ78M05 Three-terminal positive voltage regulator TO-251 TO-252-2L FEATURES ∙ Output Current up to 500mA 123 1.IN ∙ Internal thermal overload protection

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter

sa1117

Abstract: 1117s 1117s33 1117-D33 1117-S33 1117s 3.3 1117h 1117H-1 1117d 1117-S25
Contextual Info: SA1117 1A LDO 稳压器电路 概述 SA1117是一款正电压输出的低压降三端线性稳压电 路，在1A输出电流下的压降为1.2V。 SA1117分为两个版本，固定电压输出版本和可调电 压输出版本。固定输出电压1.5V1.8V、2.5V、3.3V、

MJD42C

Abstract: TRANSISTOR T4
Contextual Info: MJD42C PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix)

transistor 2sb1412

Abstract: 2SB1412
Contextual Info: 2SB1412 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage

Contextual Info: MJD122 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

B772 TRANSISTOR

Abstract: br b772 TRANSISTOR b772 b772 TRANSISTOR br b772
Contextual Info: B772 Transistor PNP 1. BASE TO-252-2L 2. COLLECTOR 3. EMITTER Features — Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters) Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage

1117s

Abstract: 1117s 3.3 1117s regulator 1117s transistor sa1117 1117s adj 1117H-1 1117s 5.0 1117s33 transistor marking PB
Contextual Info: SA1117 1A LDO VOLTAGE REGULATOR DESCRIPTION The SA1117 is a positive low voltage dropout regulator, voltage dropout is only 1.2V at 1A. SA1117 has two versions: the fixed version and the adjustable version. VOUT has a tolerance of less than 1% for fixed versions

HFE100

Contextual Info: 2SD1899-Z NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector-Base Voltage

Darlington Transistor TO251

Abstract: to-252-2
Contextual Info: MJD112 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value

24v 6A mosfet

Abstract: SPP3095T252RGB SPP3095 SPP3095T252RG
Contextual Info: SPP3095 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3095 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

SPN8878

Abstract: 24V 20A mosfet switch
Contextual Info: SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall

SPN8882

Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET
Contextual Info: SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

1117-33

Abstract: 1117 3.3 1117AD 1117-3.3 1117-adj c 1117 adj 1117 L 1117-12 1117aDJ 1117-18
Contextual Info: 1A LOW DROPOUT LINEAR REGULATOR FSP1117 „ FEATURES „ z z z z Low Dropout Voltage: 1.15V at 1A Output Current Trimmed Current Limit On-chip Thermal Shutdown Three-terminal Adjustable or Fixed 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5.0V „ APPLICATIONS z z z z z z