1MX9 Search Results

Contextual Info: SAJ1SUNG ELECTRONICS INC b7E ]> • V^bNlMS DOISOTI bTb ■ S flG K KMM591020BN DRAM MODULES 1Mx9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020BN. is a 1M b itsx9 Dynamic RAM high density memory module. The Samsung KMM591020BN

KMM591000BN-6

Abstract: kmm591000bn7 KMM591000BN6 KMM591000BN8 1Mx9 DRAM 30-pin SIMM KM44C1000BJ KMM591000BN KMM591000B
Contextual Info: KMM591000BN DRAM MODULES 1MX9 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tu e tcAc I rc KMM591000BN-6 60ns 15ns 110ns KMM591000BN-7 70ns 20 ns 130ns KMM591000BN-8 80ns 20 ns 150ns The KMM591000BN is a Single In-line Memory Module

Contextual Info: 1Mx9/512Kx18/256Kx36, 20 - 45ns, ZIP 30A104-10 A 9 Megabit CMOS SRAM DPS256S36LK PRELIMINARY DESCRIPTION: The DPS256S36LK is a 256K X 36 high-density, low-power static RAM module comprised of eight 128Kx8 and four 256Kx4 monolithic SRAM’s, an advanced high-speed CMOS decoder, resistor network

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

LG 2MX32 EDO simm module

Abstract: GMM732201 GMM732411OCNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32

Contextual Info: MOSEL-VITELIC fc.2E D MOSEL-VITELIC • V404J8 and V404J9 1MX9, 1 M X 8 B IT FA ST PAGE MODE CMOS DYNAMIC RAM M EM ORY MODULE HIGH PERFORMANCE V404J8/9 tp^ç 60/60L 70/70L 7 0 ns 8 0 ns 100 35 ns 4 0 ns 50 ns Min. Fast Page M ode Cycle Tim e, (tp c ) 4 5 ns

HYM591000M

Contextual Info: HY UN DA I E L E C T R O N I C S SIE D •HYUNDAI SEMICONDUCTOR • 4L>75Gfifi TS3 H H Y N K HYM591000 1MX9-Bit C MOS DRAM MODULE M 4 4 1 2 0 1 C -J A N 9 2 18 DESCRIPTION FEATURES The HYM591000M is a 1M words by 9 bits dynamic RAM module and consists of nine

GMM732411

Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6

1Mx9 DRAM 30-pin SIMM

Abstract: KMM591000CN dram simm memory module samsung 30-pin 44C1000CJ KMM591000
Contextual Info: DRAM MODULE 1 Mega Byte KMM591OOOCN Fast Page Mode 1Mx9 DRAM SIMM , 1K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM591 OOOCN is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOCN consists of two CMOS • Performance Range:

MCM91000

Abstract: motorola mcm91000s
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 MCM9L1000 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP)

MCM91430

Abstract: 1Mx9 DRAM 30-pin SIMM 91430 MCM91430S
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 MCM9L1430 Advance Information 1Mx9 Bit Dynamic Random A ccess Memory Module The MCM91430 and MCM9L1430 are 9M dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead

Contextual Info: MOSEL-VITELIC V404J8 a nd V404J9 P R E L IM IN A R Y 1MX9, 1 M X 8 B IT F A S T P A G E M O D E C M O S D Y N A M IC R A M M E M O R Y M O D U L E 60/60L 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns HIGH PERFORMANCE V404J8/9 Max. Column Address Access Time, (tCAA)

DPS256X36L

Contextual Info: 1Mx9/512Kx18/256Kx36, 20 - 45ns, ZIP 30A112-00 A 9 Megabit CMOS SRAM DPS256X36L DESCRIPTION: The DPS256X36L is a 256K X 36 high-density, low-power static RAM module comprised of eight 256K X 4 and four 256K x 1 monolithic SRAM’s and decoupling capacitors surface mounted on a FR-4

1Mx9 DRAM 30-pin SIMM

Abstract: j353 msc module odq1 MSC CAPACITOR MSC R631T-1 dram module DRAM 30-pin SIMM Module/DS-70
Contextual Info: ¿0% - iu.^0 1.02.01.02 DRAM - MODULE M IC R O C O M P U T E R S • S Y S T E M S * C O M P O N E N T S V E R T R IE B S G M B H Fast Page Mode 1 Mega Byte MSC 991100J3NS 1Mx9 DRAM SIMM, 1K Byte Refresh, 5.0V GENERAL DESCRIPTION The M SC 991100J3N S is a lM x9bits Dynamic RAM high

RAS 0510

Abstract: aepdx1m9l
Contextual Info: AEPDX1M9L DYNAMIC RAM MODULE > > 1,048,576 x 9 Organization > > 3 0 pin SIP > > Low 0.510 inch stand-off height > > Optional PARITY CHECKER on board > > Single + 5 V p o w er supply > > TTL com patible > > Pin for pin com patible with standard modules without parity checker

A67L06361

Abstract: A67L06361E A67L16181 A67L16181E
Contextual Info: A67L16181/A67L06361 Series Preliminary 2M X 18, 1M X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 2M X 18, 1M X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History History Issue Date Remark 0.0 Initial issue July 26, 2004 Preliminary 0.1 Change speed grade from cycle time to access time

A63P0636

Abstract: A63P0636E
Contextual Info: A63P0636 1M X 36 Bit Synchronous High Speed SRAM with Preliminary Burst Counter and Pipelined Data Output Document Title 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Revision History Rev. No. 0.0 PRELIMINARY History

Contextual Info: 2.5 VOLT HIGH-SPEED TeraSync FIFO IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 18/131,072 x 9,

SIMM 1Mx9

Contextual Info: SMART SM5360140U1P3UU Modular Technologies October 26, 1999 Revision History • October 26, 1999 Datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SMART SM5331000 Modular Technologies February 12, 1997 4MByte 1M x 33 DRAM Module - 1Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM Operating Voltage :

Contextual Info: JUL i F «:• SM5361000 L /5361000A(L)/5361000B(L) January 1993 Rev 2 SMART Modular Trchnoiotscs SM5361000(L)/5361000A(L)/5361000B(L) 4MByte (IM x 36) CMOS DRAM Modules General Description Features The SM 5361000 is a high performance, 4-megabyte dynam ic RAM module organized as 1M words by 36 bits,

27C101

Abstract: 27 eprom programmer schematic 511000 dram interfacing sram and dram 511000 A0-A21 HM511000 SH7032 Hitachi DSA00197 hitachi sh3 1995
Contextual Info: Hitachi Europe Ltd. ISSUE : APPS/64/1.0 APPLICATION NOTE DATE : 06/12/97 Interfacing High Speed SRAM/DRAM to the SH-1 Embedded Controller Introduction Memory Interfacing is a very important aspect of microprocessor based system design. Unfortunately, careful

IDT72T18105

Abstract: IDT72T18115 IDT72T18125 IDT72T1845 IDT72T1855 IDT72T1865 IDT72T1875 IDT72T1885 IDT72T1895
Contextual Info: 2.5 VOLT HIGH-SPEED TeraSync FIFO IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 18/131,072 x 9,

32kx18

Contextual Info: 2.5 VOLT HIGH-SPEED TeraSync FIFO PRELIMINARY IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 18/131,072 x 9,