VEBO Search Results

SMD TRANSISTOR MARKING BR

Abstract: 2SC5209 marking RH
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO

smd transistor GY

Abstract: smd marking GY smd GY marking gy VEBO-15V MARKING SMD NPN TRANSISTOR BR 2SC4413
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4413 Features Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

2SD1418

Abstract: MA1060
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SD1418 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO

BCY79-8

Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 45.0 V NO. BCY79-8 Voltage, Collector to Emitter (VCE) 45.0 V TYPE PNP Voltage, Emitter to Base (VEBO) 5.0 V empty empty Collector Current (IC) 0.2 A empty empty 0.02 A CASE TO-18

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

SD-1 diode

Abstract: sd 150 zener diode
Contextual Info: s o 00 3> Continued from preceding page. -C O Classified by package and arranged in order of increasing Vq j o I(\ Absolute Maximum Ratings/Ta=25“C Case Applications VCBO VCBO VEBO IC [V] [V] [V] [A] PC I Ij VCB *TC=25*C [•C] [V] [W] ICEO (max [A] fT

horizontal deflection

Contextual Info: TV/CRT Display Application Transistors II Absolute maximum ratings Package Device Application type VCBO (V) VcEO (V) Vebo (V) ic (A) m Electrical characteristics (Ta = 25 deg. C) Tj Pc VcEfMfj @ ! c - I b (deg. C) VcEjsat) (V) tire @ Vce ic tf max tc (A)

Contextual Info: SILICON NPN EPITAXIAL T Y P E HN1C03F U n it in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIONS. + 0.2 2 .8 - 0 .3 • Including Two Devices in SM6 Super Mini Type w ith 6 leads • H igh E m itter-B ase Voltage : VEBO = 25V(M in.) • H igh Reverse h p g

2SC1815GR

Abstract: 2SC1815BL 2N3693 2SC1815-GR 2SC1815-BL 2N5209 2N5210 2N5232 2N5232A 2SC1815
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Typ* No. 2N5209 VC80 VCE0 VEBO (V) Mn (V) Min (V) Min 50 50 5 'cso (UA) Max 0.050 VC8 (V) hFE Min 35 50 50 5 0.050 35 9 Max Cob 'c & VCE VCE(SH| ®^BE (Sal) ® •c Ices 0 vce (mA) (uA) (V) (mA) (V) (V) (V) (Pf) Min Max

2N2060

Abstract: 2N2721 2N2060 MOTOROLA
Contextual Info: MOTORCLA SC \ Ir * XSTRS/R F IZE O I b3b?2S4 00flb5fe,7 M i" J -. • m I ? 2N2721 CA S E 654-07, STYLE 1 M A X I M U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Vebo 6.0 Vdc

BC557 pnp transistor

Abstract: BC551 BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A
Contextual Info: T092 PLASTIC PACKAGE TRANSISTORS PNP Typ» No. VC80 (V) Min 50 BC307B {Ta=25°C, U n le s s O th e rw is e S p e c ifie d ) E le c tric a l C h a ra c te ristic s M a x im u m R a tin g s VCEO VEBO lC0O (V) Min (V) Min (uA) Max hFE ^ce (VI 45 lc & (mAl

SMD TRANSISTOR MARKING BR

Abstract: MARKING SMD NPN TRANSISTOR BR IC smd 2SC4446 VEBO-15V TRANSISTOR SMD NS SMD 6v Transistor
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4446 Features Very small-sized package High VEBO. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

vebo

Abstract: 2SD1824 VEBO-15V
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1824 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE sat High emitter-base voltage VEBO 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol

VEBO-15V

Abstract: MARKING UM 2sc3618 application 2SC3618 smd marking uk
Contextual Info: Transistors SMD Type NPN Silicon Epitaxia 2SC3618 Features World standard miniature package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 15 V Collector current

2N5551 CJ

Contextual Info: This I tr Material Ln a b-1 t-1 U a NPN General Purpose Amplifiers and Switches Device No. Case Style ^C B O V CEO Copyrighted V Min (V) Min (V) Min 75 45 6 CD jr PN100 CD TO-92 (92) vEBO (continued) ICES* *CBO (nA) Max 50 V @ CB hFE (V) Min 60 80 100 100

bc 147 transistor

Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
Contextual Info: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits

2n h 2222a

Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT

Contextual Info: Product specification 2SB1000 Features Low frequency amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -25 V Collector to emitter voltage VCEO -20 V Emitter to base voltage VEBO -5 V IC -1 A Collector current

Contextual Info: Transistors SMD Type Product specification 2SD1421 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO

13003a

Abstract: 13003a TRANSISTOR 13003E 13003F 13003 13003b 13003c C13003 c13003b marking code SUs 15
Contextual Info: C13003 TO126 PLASTIC PACKAGE NPN SILICON POWER TRANSISTOR Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO VALUE 600 UNIT V VCEO VEBO IC 400 9.0 1.5 V V A Peak 1 ICM 3.0

MARKING IY SOT

Contextual Info: WTA8921 PNP Silicon Transistors COLLECTOR * “G” Lead Pb -Free 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value

marking GY sot89

Abstract: ktc4375
Contextual Info: KTC4375 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V 1.5

Contextual Info: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current

Contextual Info: Product specification 2SA1532 Features High transition frequency fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO