HN1C03F Search Results

Contextual Info: SILICON NPN EPITAXIAL T Y P E HN1C03F U n it in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIONS. + 0.2 2 .8 - 0 .3 • Including Two Devices in SM6 Super Mini Type w ith 6 leads • H igh E m itter-B ase Voltage : VEBO = 25V(M in.) • H igh Reverse h p g

HN1C03F

Contextual Info: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

HN1C03FU

Contextual Info: HN1C03FU シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C03FU ○ ミューティング用 ○ スイッチング用 z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。

HN1C03FU

Contextual Info: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

HN1C03F

Contextual Info: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm l Including two devices in SM6 (Super mini type with 6 leads) l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

Contextual Info: T O SH IB A HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03FU Unit in mm FOR MUTING AN D SWITCHING APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads) High Emitter-Base Voltage : V e BO = 25V (Min.)

Contextual Info: HN1C03F T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03F Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. + 0.2 2 .8 - 0 . 3 • Including Two Devices in SM6 (Super Mini Type with 6 leads) • High Emitter-Base Voltage : Ve b O = 25V (Min.)

HN1C03F

Abstract: TOSHIBA 2803
Contextual Info: TOSHIBA HN1C03F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03F Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. + 0.2 • • • 2.8-0.3 Including Two Devices in SM6 (Super Mini Type with 6 leads) High Emitter-Base Voltage : VEBO-25V (Min.)

015G

Abstract: HN1C03F
Contextual Info: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm Including two devices in SM6 (Super mini type with 6 leads) High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

HN1C03F

Contextual Info: HN1C03F シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C03F ○ ミューティング用 ○ スイッチング用 z z z z 単位: mm スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。 エミッタ・ベース間電圧が大きい。 : VEBO = 25V (最大)

HN1C03F

Contextual Info: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

280AM

Contextual Info: SILICON NPN EPITAXIAL TYPE HN1C03FU U nit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIONS. • Including Two Devices in US6 Ultra Super Mini Type with • High Emitter-Base Voltage : V g jjo = 25V (Min. • High Reverse hyg : • □ in - Q <£> 1 Ö

HN1C03FU

Contextual Info: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

Contextual Info: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit: mm z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

HN1C03FU

Contextual Info: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications l Including two devices in US6 (ultra super mini type with 6 leads) l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

HN4C06J

Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Contextual Info: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2