2SA1812 Search Results

Contextual Info: Transistors SMD Type High-voltage Switching Transistor 2SA1812 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● High breakdown voltage. ● Low saturation voltage. 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1 2 2.60±0.1

2SA1727

Abstract: 2SA1776 2SA1812 96-609-A313
Contextual Info: Transistors 2SA1812 / 2SA1727 / 2SA1776 96-609-A313 320 Transistors Packages 45

2SA1885

Abstract: transistor 2sa1776
Contextual Info: 2SA1885 2SA1812 / 2SA1727 / 2SA1776 Transistors High-frequency Amplifier Transistor, RF switches — 10V, — 0.1 A I 2S A 1885 # F e atu re s • A b s o lu t e m ax im u m ra tin g s (T a = 2 5 'C ) t ) H ig h tran sitio n fre q u e n cy . (T y p . 6 5 0 M H z )

e5200

Abstract: 2SA1812 VCEO400V
Contextual Info: |>7 > V * £ /Transistors 2SA1812 = m & w t7 \ s-t-M p n p h7 > y ^ $ Triple Diffused Planar PNP Silicon Transistor 2 S A 1 8 1 2 High Voltage Switching Power Supply Switching of Telephone • iH K ^^S /D im ensions (Unit: mm) 1) m m E .- e & o z VC EO = — 4 0 0 V

4036

Abstract: 2SA1812 1.4934 BY 143
Contextual Info: SPICE PARAMETER 2SA1812 by ROHM TR Div. * 2SA1812 PNP BJT model * Date: 2006/12/18 .MODEL 2SA1812 PNP + IS=550.00E-15 + BF=118.60 + VAF=24.033 + IKF=.4821 + ISE=550.00E-15 + NE=1.4036 + BR=4.8184 + VAR=100 + IKR=1.4934 + ISC=506.15E-12 + NC=1.5119 + NK=.89675

2SA1885

Abstract: transistor 2sa1776 2SA1776 RF transistor marking code Mt 2sa1812
Contextual Info: 2SA1885 2SA1812 / 2SA1727 / 2SA1776 Transistors High-frequency Amplifier Transistor, RF switches —10V, —0.1 A 2SA1885 •F e a tu re s • A b s o lu t e m axim um ratings ( T a = 2 5 t î ) 1 ) High transition frequency. (Typ. 650MHz) P aram eter Collector-base voltage

2sa1812

Contextual Info: 2SA1812 h "7 > v ^ £ / T ransistors E 2 S A 1 8 1 2 . s m z f l ' - i - M P N P > ' J 3 > b y > > ' 7 . i i Triple Diffused Planar PNP Silicon Transistor W G m W M Z 'f'y fJ B High Voltage Switching (Power Supply Switching of Telephone) • Wf^iStlSi/DiiTiensions (Unit: mm)

2SA1776

Abstract: 2SA1727 2SA1812 A313 96-609-A313
Contextual Info: Transistors 2SA1812 / 2SA1727 / 2SA1776 96-609-A313 320

96-609-A313

Abstract: 2SA1727
Contextual Info: Transistors 2SA1812 / 2SA1727 / 2SA1776 96-609-A313 320 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

D352 transistor

Abstract: transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 9697a 96-596-A74 transistor D212
Contextual Info: Transistors 2SA1759 2SC4505 / 2SC4620 96-97-A324 (96-178-C300) 305 Transistors 2SA1797 / 2SB1443 2SC4672 (96-100-B208) (96-181-D208) 291 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1900 2SC5053 (96-115-B352) (96-196-D352) 297

TRANSISTOR D400

Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)

Contextual Info: 2SA1812P Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: Transistors SMD Type Product specification 2SA1812 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● High breakdown voltage. ● Low saturation voltage. 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1 2 2.60±0.1 1 3.00±0.1

2SA1885

Abstract: transistor 2sa1776
Contextual Info: 2SA1885 2SA1812/ 2SA1727 / 2SA1776 Transistors High-frequency Am plifier Transistor, RF switches — 10V, — 0.1A 2SA1885 0 Features >A bsolute maxim um ratings (T«=25'C ) 1 ) High transition frequency. (Typ. 650M H z) P aram eter Collector-base voltage

2SA1833

Abstract: 2SA1842 2SC4614 2SA1770 2SA1812 2SA1772 2SA1773 2SA1775 2SA1776 2SA1777
Contextual Info: 50 O V 2 5 U 2SA1770 Vc b o VcEO V (V) HV SW -180 !C C D C ) (A) *EPfàTc=25t;) Pc Pc* (W) (W) -160 -1.5 1 M ICBO (max) (*A) VcB (V) -1 -120 M (min) 1i ft (max) Vc e (V) 100 400 -5 (Ta=25°C) Ic / I e (A) [*EPÍátyp (max) (V) (V) ic (A) -0.1 -0.5 -1.2

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

B1182

Abstract: B 1182 b1184 D1664
Contextual Info: T r T r a n s sto rs ★ Package m ounted on ceram ic 14 x 18 x 0.7m m • MPT SOT-89 , CPT (DPAK) Types Ty pe . (A) 32 -1 2* MPT (A) CPT 2 S B 1132 — — 2 S B 1184 -5 0 3 — 15 2 S B 1188 2 S B 1182 -32 2 2* 10 2 S B 1189 — 80 2 S B 1260 2SB1181

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

2SC4649 N,P

Abstract: 2SC40B UMX13 MDC02 DTA214YU 2S81260 DTA115UK 2sc5073 2sb1107 dta123y
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products types : 1 standard, (2) semi-standard, and (3) custom. (1) Standard products An inventory of these products is maintained so we can responed to customer orders quickly. (2) Semi-standard products

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178