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Contextual Info: 2SD1448 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)70 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3181
Abstract: 2SD1526 1286-Z 2SD2239 2SC2060 2Sd1448 2SD400 2SD798 2SD822 2SD1114
Contextual Info: 236 - a Si £ Type No. « » « fe' T T fci T 2SD 12 7 5A 2SD 1 27 6 2SD 12 7 6A 2SD 1 27 7 2SD 12 7 7A 2SD 1278 2SD 1 28 0 2SD 1 2 81 2SD 1 2 82 2SD 1 2 83 2SD 1284 2SD 128 5 > 2S D 1286 TOSHIBA 1 NEC 31 HITACHI § t FUJITSU I ta t MATSUSHITA = m MITSUBISHI
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2sd17652sd15892sd19332sd1590+132sd16042sd20252sd8222sd16192sc31812sd15261286-z2sd22392sc20602sd14482sd4002sd7982sd1114
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2SD1570
Abstract: 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323
Contextual Info: - 234 - m % Type No. tt 2 SD 1 2 1 2 * - H 2 SD 1 213 ^ = 2 SD 1 2 1 4 ^ fé fé fé fé 2 SD 1215 2 SD 1216 2 SD 1 217 ~« n 1 91 «- * 2 SD 1 21 9 ^ 2 SD 1 22 0 n T m T 2SD1393 T 7SD139S fé T - m *£ j£ 2 SD 1 22 3 y m ^ M 2 SD 1 22 5 / □ - A 2 SD 1 2 26
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2sd14432sd17072sc32932sd1322+142sd13232sd13242sd13932sd14812sd15212sd13252sd15702sd14882sd4122sd41111161141a2sd10332sd1193
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11mil-hdbk-217fit2sk2500upc1037haupc648c2sk927nec 2sk2500upd5201gupa64haupd6360c2sh24n13t1
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MICROPROCESSOR Z80
Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call
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z80tmv20tmv20hltmv25tm+16v25hstmv30tmv30hltmv33tmv33atmv35tmmicroprocessor z80upd72020upc5102transistor 2p4mupd64872sd15572sj 3305upd77529transistor sod marking code 352amicro servo 9g tower pro
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2SD1165A
Abstract: D 1163 A 2SD1084 D1138 2sc2373 2Sd1165 2sD1307 2SD1961 2SD1265 1170 T
Contextual Info: - 232 - m € Type No. € tt Maniif. =M H SANYO nt s TOSHIBA a b NEC 31 HITACHI m ± il FUJITSU ft T MATSUSHITA jr. H MITSUBISHI □ — A ROHM 2 S D 1135 <- s a 2 S D 1136 * s a 2 S D 1137 ✓ s a 2SD743A 2SD857 2SD1896 s a 2SC2336A 2SC2660 2SD1562A 2 S D 1138 ,
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2sd11352sd11362sd11372sd1236+152sd10602sd5262sd5252sd743a2sd857b2sd1165ad 1163 a2sd1084d11382sc23732sd11652sd13072sd19612sd12651170 t
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K68A
Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Contextual Info: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E
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sc-59do-35sc-63t0-220ab+10k68aa1f4ma1a4mr1ikn1a4m2sk1042sa1138a1l4mn1f4m2sd1557
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transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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mil-hdbk-217c11178ejcv0iftransistor nec 2sk2500nec 2sk2500+82sk2500n13t12sk2500 equivalentupc1037haupc648c2sh252sk2500 transistor2sh24
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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pd7500x10679ejav0sg00mf-11341995p+10upc2581upc20022sd1557upa67cupb582upc1237upc3172p4m pin diagram2sc4328upc157
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2SD1810
Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
Contextual Info: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5
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2sc42102sd5962sc26182sd1328+122sc42092sd780a1782k2sd602a2sd18102sd11112sd16942sc1280a2sc35652sc43502sc45742sc3145
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2Sc4431
Abstract: 1763A 2SC1449 2SD1116 2SD1944 2sc2238 2SD1929 ZSD1264 25c2655 2SD1405
Contextual Info: - m & Type No. 2SD 1736 2SD 1737 2SD 1738 2SD 1739 2SD 1740 / 2SD 1756 ✓2SD 1757 2SD 1 758 2SD 1759 S 2SD 1760 ^ 2S0 1761 ^ 2SD 1 762 2SD 1763 ^ 2S0 1763A 2SD 1764 2SD 1765 , 2SD 1766 * 2SD 1767 2SD 1768 2SD 1769 2SD 1 770 <*-' 2SD 1 7 7 0 A 2SD 1771 2SD 1 7 7 2
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2sd16532sd16542sd16552sd1656+162sd14072sd14992sd18892sd16082sd10482sc28592sc44311763a2sc14492sd11162sd19442sc22382sd1929zsd126425c26552sd1405
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2SD1557
Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m
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2sa13762sa1376a2sc34782sc3478a+162sa15442sc16742sc16752sa10052sa12062sa9882sd15572sa11522sc4333high hfe transistor2sb15812sc4063high hfe darlington transistor sc702sb1099 transistortransistornec 2sb1099
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SD 1083
Abstract: SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134
Contextual Info: 230 - m « Type No. 2SD 1055 ^ =fet □— A 2SD 1059 ✓ 2SD 1060 2SD 1061 ^ 2SD 1062 2SD 1 0 6 3 * * é ?sn inß* , 2 SD 106 5 - 2 SD 1067 2SD 1069 € Manuf. m = = & E & E & E ß E Pß E # M 'S. 2SD 1070 2SD 1071 n±m m 2 SD 1072 m ±w » 2 SD 1073 « ± s «
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2sd10552sd12462sd6132sd525+152sc25622sd8432sd11372sd11342sd7432sd568sd 1083sd10872sd10842sd10332sd12382sd12452sd9872sd772b2sd1706
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C1959
Abstract: nec 2405 NEC 2403 2sc4560 nec 2410 2SD2409 2sd2427 nec 2412 2SD1509 NEC 2415
Contextual Info: - sa s T y p e Ho. tt £ Manu f. = X SANYO S TOSHIBA n B NEC B ÍL HITACH I s ± a F U JIT S U fé T MATSUSHITA Z * M ITSUBISHI □ 267 — A ROHM 2SD 2403 B S 2SD1624 2SC4541 2SO 2404 fé T 2SD2426 2SD1509 2SD 2405 fé T 2SD2251 2SD1433 2SO 2406 ^ Si 2SD2202
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2sd24032sd24042sd24052sd2406+152sd24072sd24082sd24092sd24102sd24122sd2413c1959nec 2405nec 24032sc4560nec 24102sd2427nec 24122sd1509nec 2415
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2SD1460
Abstract: 2SD1477 2SD1473 2sd1467 2SD1422 2sd1425 2SB1029 2SD1466 2SD1058 2SD1407
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1401 1500 7 3.5A 80W(Tc=25ºC) 150 25 5 500 3* 120W 2SD1402
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2sd14012sd14022sd14032sd1404+152sd14052sd14062sd14072sd14082sd14092sd14102sd14602sd14772sd14732sd14672sd14222sd14252sb10292sd14662sd1058
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