2SD1509 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE DARLINGTON POWER -2SD1509 INDUSTRIAL APPLICATIONS Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 8. 3 MA X , &8 FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A)

2SD1509

Contextual Info: 2SD1509 TO SH IBA 2 S D 1 509 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : Low Saturation Voltage : v CE(sat) = 1-5V (Max.)

D1509

Abstract: 2SD1509
Contextual Info: 2SD1509 シリコンNPNエピタキシャル形 ダーリントン接続 東芝トランジスタ 2SD1509 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

D1509

Abstract: 2SD1509
Contextual Info: 2SD1509 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1509 Micro-Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D1509

Abstract: 2SD1509
Contextual Info: 2SD1509 シリコンNPNエピタキシャル形 ダーリントン接続 東芝トランジスタ 2SD1509 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

D1509

Abstract: 2SD1509
Contextual Info: 2SD1509 TOSHIBA 2 S D 1 509 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE D AR LIN G TO N M ICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS Unit in mm SW ITCHING APPLICATIONS 5.8 POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : h;pE = 2000 (Min.)

Contextual Info: T O S H IB A 2SD1509 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2 S D 1 509 MICRO MOTOR DRIVE, H A M M ER DRIVE APPLICATIONS U nit in mm SWITCHING APPLICATIONS 8.3MAX. ¿3.1 ±0.1 5.0 PO W ER AM PLIFIER APPLICATIONS • High DC C urrent Gain : h p g = 2000 (Min.)

2SD1509

Contextual Info: 2SD1509 TO SH IBA 2 S D 1 509 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS Unit in mm SWITCHING APPLICATIONS 43.1 ± 0 .1 POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : Low Saturation Voltage

D1509

Abstract: 2SD1509
Contextual Info: 2SD1509 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1509 Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

FT DARLINGTON TRANSISTOR

Contextual Info: TOSHIBA 2SD1509 ?<:ni >;nq TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS Unit in mm SWITCHING APPLICATIONS • • High DC Current Gain : hjr^ —2000 (Min.) Low Saturation Voltage . , . _ • v u ü isat; - '

Contextual Info: 2SD1509 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER INDUSTRIAL APPLICATIONS MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain : h F E=2000(Min.) (VCE=2V, I c =1A) . Low Saturation Voltage

Contextual Info: 2SD1509 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1509 Micro-Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

C1959

Abstract: nec 2405 NEC 2403 2sc4560 nec 2410 2SD2409 2sd2427 nec 2412 2SD1509 NEC 2415
Contextual Info: - sa s T y p e Ho. tt £ Manu f. = X SANYO S TOSHIBA n B NEC B ÍL HITACH I s ± a F U JIT S U fé T MATSUSHITA Z * M ITSUBISHI □ 267 — A ROHM 2SD 2403 B S 2SD1624 2SC4541 2SO 2404 fé T 2SD2426 2SD1509 2SD 2405 fé T 2SD2251 2SD1433 2SO 2406 ^ Si 2SD2202

2SD2449

Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
Contextual Info: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129

D1509

Abstract: information lot 2SD1509
Contextual Info: 2SD1509 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1509 Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

2SC3424

Abstract: 80240 2SA1361
Contextual Info: -3 5 TO-126 ( j S ) PACKAGE S E R IE S o n T0-126<JSD JZ IffH. —“ CD o (0 N ro ' in i° Application . . VCEQ Type No. v PNP NPN Audio Drive T V Chroma Out I 'V I 2SC3423 j 2SC3424 2SA1360 T V Chroma Out v 2SC3619 I 1 2SA1361 • T V Chroma Out |

C3422

Abstract: AAAM strobo 2SC3420 2SD1508 2SD1509
Contextual Info: Powered T O -1 26 ¡ D O CO N N tn O Application Electronic-Library •c v CEO '-/P&'V. Type No. NPN PNP Ì Audio Drive 2SC3423 ! 2SA1360 T V Chroma Out 2SC3424 ! 2SA1361 . .1 (A VcE*(sat) w VX. ;W frp g,'. •' Tc=2?C V CE >C (V) (W> (V) (A) >c (V> (A)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428