2SB1457 Search Results

b1457

Abstract: B1457 transistor 2SB1457
Contextual Info: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)

2SB1457

Contextual Info: T O S H IB A 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 457 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. • • 5.1 MAX High DC Current Gain : hpE -200 (Min.) (Vç;e = —2V, Iç; = —1A)

B1457

Abstract: 2SB1457
Contextual Info: 2SB1457 シリコンPNPエピタキシャル形 ダーリントン接続 東芝トランジスタ 2SB1457 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)

B1457 transistor

Contextual Info: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

lm 383 ic

Contextual Info: 2SB1457 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER Unit in mm M ICRO M OTOR DRIVE, HAM M ER DRIVE APPLICATION S. POW ER SW ITCHIN G A PPLICATIO N S. POW ER AM PLIFIER APPLICATIO N . • • High DC C urrent Gain : hpE = 200 (M in.)(V cE= -2 V , Ic = - 1 A )

aaBO

Contextual Info: TOSHIBA 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 457 Unit in mm MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. 5.1 MAX PO W ER SWITCHING APPLICATIONS. PO W ER AM PLIFIER APPLICATION. High DC Current Gain : hpE = 200 (Min.) (V(jE = —2V, Iç; = —1A)

2SB1457

Abstract: wv1 transistor
Contextual Info: TO SH IBA 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 457 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX. POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATION • • High DC Current Gain : h^E = 200 (Min.) (V'ce = - 2V,

b1457

Abstract: B1457 transistor
Contextual Info: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

B1457

Abstract: 2SB1457
Contextual Info: 2SB1457 東芝トランジスタ シリコンPNPエピタキシャル形 2SB1457 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = −2 V, IC = −1 A)

2SB1457

Contextual Info: TO SH IBA 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 457 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. • • 5.1 MAX High DC Current Gain : hpE -200 (Min.) (Vç;e = —2V, Iç; = —1A)

B1457 transistor

Abstract: b1457 2SB1457
Contextual Info: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

2SD2449

Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
Contextual Info: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129

B1457

Abstract: B1457 transistor 2SB1457
Contextual Info: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)

Contextual Info: T O SH IB A 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. Unit in mm 5.1 M A X • High DC Current Gain : h;pE = 200 (Min.) (V q £ = —2V, I ç = —1A)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4