2SD2413 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2413 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z High collector to base voltage VCBO z High collector to emitter voltage VCEO z Large collector power dissipation PC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package ■ Features • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO

2SD2413

Contextual Info: Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm ● ● 0.5±0.08 1.5±0.1 * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage

2SD2413G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter Th an

Contextual Info: Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 ● 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 2.5±0.1 0.4±0.04 3° 0.4 max. ● 3° ● High collector to base voltage VCBO. High collector to emitter voltage VCEO.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C

2SD2413

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2413 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z High collector to base voltage VCBO z High collector to emitter voltage VCEO z Large collector power dissipation PC

2SD2413

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 • Features 1.5±0.1 Unit Collector-base voltage (Emitter open) VCBO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 Unit Collector-base voltage (Emitter open) VCBO 400 V Collector-emitter voltage (Base open)

2SD2413G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification • Package ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 400

2SD2413

Contextual Info: Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm ● ● 0.5±0.08 1.5±0.1 * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage

marking 1s

Abstract: 1s SOT-89
Contextual Info: 2SD2413 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B Features — — — — 2.6 4.25 2.4 3.75 High collector to base voltage VCBO High collector to emitter voltage VCEO Large collector power dissipation PC Low collector to emitter saturation voltage VCE(sat)

2SD2413

Abstract: 2SD24
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.5±0.1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

2SC144

Abstract: 2SD466 2sc5266
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