2SD1408 Search Results

5v 25w ta amplifier

Abstract: 2SB1017 2SB1018 2SD1408
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1017 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1408 APPLICATIONS ·Designed for power amplifier applications.

2SD1408

Abstract: RC3A 2SB1017
Contextual Info: TOSHIBA { DI SC R ETE/OPTO} 9097250 TOSHIBA ~5b CDI S C R E T E /O P T O " ' 5 6C 2SD1408 DE I clDt:i75SD 0 0 0 7 cm s 5 07 9 4 5 D J - 3 à - 0*7 S IL IC O N NPN T R IP L E D IF F U SE D TYPE POWER AMPLIFIER APPLICATIONS. . - . U n i t i n mm .10.3MAX.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD1408 Features • High Voltage: V BR CEO=80V • Case Material: Molded Plastic. Classification Rating 94V-0

2SB1017

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1017 POWER A M P L I F I E R APPLICATIONS. Unit in mm 1 0.3 MAX . FEATURES: 7.0 ,03.2 ±0.2 . Good Linearity of hpg :je . Complementary to 2SD1408 . Recommended for 20~ 25W High-Fiderity Audio Frequency Amplifier Output Stage.

Contextual Info: TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA s t 2SD1408 POWER AMPLIFIER APPLICATIONS. I t d t o s d 0794 5 ‘ Tòt DISCRETE/OPTO dF o o o 7 cm s 0 J - 3 3 -c r^ SIL IC O N NPN T R IP L E D IF F U SE D TYPE . U n it i n mm .1013MAX FEATURES: , '

2sb1017

Abstract: 2SD1408 V2409
Contextual Info: SavantIC Semiconductor Product Specification 2SB1017 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1408 · APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage

Contextual Info: TOSHIBA 2SB1017 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 017 POWER AMPLIFIER APPLICATIONS. U n it in m m • Good Linearity of hjpg • Complementary to 2SD1408 • Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage.

2sd1408

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1408 POWER AMPLIFIER APPLICATIONS. Unit in mm 1Q3MAX FEATURES : 03.2ÎÛ2 . High Power Dissipation : Pc=25W Tc=25°C □ 3 . . Good Linearity of hpg . Complementary to 2SB1017 . Recommended for 20~-25W High Fidelity Audio Frequency

2SD1408

Abstract: OF IC 748 ic 748
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1408 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High Power Dissipation : Pc=25W Tc=25°C . Good Linearity of hpg . Complementary to 2SB1017 . Recommended for 2 0 ~ 2 5 W High Fidelity Audio Frequency Amplifier Output Stage.

2SD1408

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD1408 Features • NPN Silicon Transistors High Voltage: V BR CEO=80V Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage

2SB1017

Abstract: 2SD1408
Contextual Info: Inchange Semiconductor Product Specification 2SB1017 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1408 APPLICATIONS ・For power amplifications ・Recommended for 20-25W high-fidelity audio frequency amplifier output stage

2SB1017

Abstract: V2409 2SD1408
Contextual Info: JMnic Product Specification 2SB1017 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1408 APPLICATIONS ・For power amplifications ・Recommended for 20-25W high-fidelity audio frequency amplifier output stage

Contextual Info: 2SB1017 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm POW ER AMPLIFIER APPLICATIONS. • • • Good Linearity of hpg Complementary to 2SD1408 Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATING S Ta = 25°C SYMBOL

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "st 56C DI SCRETE/OPTO SILICON PNP TRIPLE DIFFUSED TYPE DE I TOc]?aSD DD073TS 07395 O T " 3 5 “/ ? 2SB1017 _ Unit in mm POWER AMPLIFIER APPLICATIONS. 1 0 . 3 MAX, 05.2±O.Z 7.0 FEATURES: Z1 . Good Linearity of hpE

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

BD149

Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25

2SD1383K

Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
Contextual Info: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD1379 0Ä 2SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT

f 4558

Abstract: 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425
Contextual Info: - m € Type No. € tt Manuf. 2SC 4548 / 2SC 4549 > H # o m. p B $ B S B 8 2SC 4550 2SC 4551 2SC 4552 H # SANYO *£ M TOSHIBA 2SD127D 2SD1271 2SC3748 2SC3709 2SÜ2151 2SC3710 2SD1964 2SD1947 2SD1271 2SC 4555 = 2SC 4556 1 t'y'T'y 2SC4162 2SC3626 y -ytry 2SC4459

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A