2SD1411 Search Results

2SD1411

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)

2SB1018

Abstract: 2SD1411
Contextual Info: JMnic Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications ・High current switching applications

2sb1018

Abstract: 2SD1411 2sB101
Contextual Info: Inchange Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications

D1411A

Abstract: 2SB1018A 2SD1411A
Contextual Info: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)

2SB1018A

Abstract: 2SD1411A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1018A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High collector current ·Low collector saturation voltage ·Complement to type 2SD1411A APPLICATIONS ·Power amplifier applications ·High current switching applications

pnp 4A switching

Abstract: 2SB1018 2SD1411
Contextual Info: SavantIC Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING

TE2555

Abstract: 20AS 2SB1018A 2SD1411 2SD1411A
Contextual Info: 2SD1411A TOSHIBA TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 411 A HIGH CURRENT SW ITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • Low Saturation Voltage : V q ^ s a t “ 0.5V (Max.) at Iq = 4A Complementary to 2SB1018A M A X IM U M RATINGS (Ta = 25°C)

20AS

Abstract: 2SB1018A 2SD1411 2SD1411A
Contextual Info: 2SD1411A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 411 A HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage

D1411A

Abstract: 552a 2SB1018A 2SD1411A
Contextual Info: 2SD1411A 東芝トランジスタ シリコンNPN三重拡散形 2SD1411A 通 信 工 業 用 ○ 大電流スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = 7 A • コレクタ飽和電圧が低い。

D1411A

Abstract: 2SD1411A 2SB1018A D1411
Contextual Info: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Maximum Ratings (Tc = 25°C)

Contextual Info: 2SD1411A TOSHIBA TO SHIBA TRANSISTOR n n mm SILICON PNP TRIPLE DIFFUSED TYPE i mmr du i m mi a m m HIGH CURRENT SW ITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Saturation Voltage : V q e gaj = 0.5V (Max.) at Iç = 4A

D1411A

Contextual Info: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)

2sd1411

Contextual Info: 2SD1411 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .2 ± C t2 FEATURES: . Low Saturation Voltage : VcE sat =0-5V(Max.) :i± at IC=4A . Complementary to 2SB1018

D1411A

Abstract: 2SB1018A 2SD1411A
Contextual Info: 2SD1411A 東芝トランジスタ シリコンNPN三重拡散形 2SD1411A 通 信 工 業 用 ○ 大電流スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = 7 A • コレクタ飽和電圧が低い。

D1411A

Abstract: 2SB1018A 2SD1411A
Contextual Info: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Ta = 25°C)

2SB1018A

Abstract: 2SD1411A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.

2SD1411

Abstract: 2SB1018
Contextual Info: SavantIC Semiconductor Product Specification 2SD1411 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS ·Power amplifier applications ·High current switching applications PINNING

Contextual Info: 2SD1411A T O S H IB A 2 S D 1 411 A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • • ^3.2 ±0.2 2.7Ì0.2 Low Saturation Voltage : V^E s a t = 0-5V (Max.) at I0 = 4A

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Contextual Info: 2SB1018 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. PO W ER AMPLIFIER APPLICATIONS. • • • High Collector Current : I q = —7A Low Collector Saturation Voltage : v CE sat = -0.5V (M ax.) at Ic = -4 A

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

B1018A

Abstract: B1018 2SD1411A 2SB1018A
Contextual Info: 2SB1018A 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB1018A 通 信 工 業 用 ○ 大電力スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = − 7 A • コレクタ飽和電圧が低い。

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187