2SD1271A Search Results

2SD1271

Abstract: 2SD1271A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB946/946A ·Low collector saturation voltage ·Good linearity of hFE ·Large collector current IC APPLICATIONS

2SB946A

Abstract: 2SD1271A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A APPLICATIONS

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching 5.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 150 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

ic shelf life

Abstract: 2SD1271A
Contextual Info: Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 150 V Collector-emitter voltage (Base open) VCEO 100 V Emitter-base voltage (Collector open)

2SD1271A

Contextual Info: SavantIC Semiconductor Product Specification 2SD1271A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Good linearity of hFE ·Large collector current IC APPLICATIONS ·For power switching applications PINNING

2SB946A

Abstract: 2SD1271A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A APPLICATIONS

2SB946

Abstract: 2SD1271 2SD1271A
Contextual Info: Power T ransistors 2SD1271, 2SD1271A 2SD1271, 2SD1271A Silicon NPN Epitaxial Planar Type P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S B 94 6 10.2max. 5.7 max. • Features • • • • Low collector-em itter saturation voltage Vce (sao

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1271A TO – 220F TRANSISTOR NPN 1. BASE FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat) z Satisfactory Linearity of Forward Current Transfer Ratio hFE

2SB946A

Abstract: 2SD1271 2SB0946 2SB946 2SD1271A
Contextual Info: Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 2SB946 and 2SB0946A (2SB946A) Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD1271 base voltage

2SD1271A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

TO-220Fa

Abstract: 2SB946 2SD1271A
Contextual Info: Power Transistors www.jmnic.com 2SD1271A Silicon NPN Transistors BCE Features ﹒For Power Switching. ﹒With TO-220Fa package ﹒Complement to type 2SB946 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO

2SB946A

Abstract: 2SB946 2SD1271 2SD1271A
Contextual Info: Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD1271 base voltage 2SD1271A Collector to

2SD1271

Abstract: 2SD127A 2SD1271A 2SB0946
Contextual Info: Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type Unit: mm 16.7±0.3 14.0±0.5 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc897 hitachi

Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

2sc2460b

Abstract: 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 2SC1815
Contextual Info: - m s T y p e No. € tt M anuf. i f v ît y i f y *r y 2 SC 2307 y - y 'r y 2SC 2308— 2SC 2309 -*- ED CD l=h 14 2SC 2305 2SC 2306«. 2SC 2310 • 2SC 2311 'Mitrii 2SC 2313 ' « H* •tf- 2SC 2314 2SC 2 3 1 5 ^ ' ÎL = * SANYO 2SC 2SC 2322 ŸÀ T MATSUSHITA

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3