2N6318 Search Results

2N6317

Abstract: 2N6318
Contextual Info: SavantIC Semiconductor Product Specification 2N6317 2N6318 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6315/6316 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

Contextual Info: MOTOROL A SC ÍXSTRS/R F> 6367254 MOTOROLA SC XSTR S/R F 96D 80464 - NPN MOTOROLA - 3 3 - / 3 7^ 3 «3 - 2N6315, 2N6316 SEMICONDUCTOR PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

Contextual Info: 2N6316 2N6318 MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) COMPLEMENTARY SILICON

Contextual Info: 2N6318 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N6318

Abstract: 2N6317
Contextual Info: Inchange Semiconductor Product Specification 2N6317 2N6318 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6315/6316 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

2N6315

Abstract: 2N6317 2N6318 2N6316
Contextual Info: DATA SHEET 2N6315 2N6317 2N6316 2N6318 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-66 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6315 Series types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and

FA 23843

Abstract: 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919
Contextual Info: Micmsemi PNP Transistors Part Number PNP 2N5312 2N586S 2N5677 2N5737 2N5316 2N5318 2NS738 2N5314 2NS872 2N6318 2N5007 2N5009 2N6594 2N5741 2N5742 2N5871 2N6317 2N5853 2N7369 2N5621 2N5623 2N5625 2N5290 2N5291 2N5627 2N6127 2N6246 2N6469 2N6247 2N6248 2N6226

Contextual Info: 2N6318 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N6317

Abstract: 2N6315 2N6316 2N6318
Contextual Info: ÆàMOSPEC COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS . designed for general-purpose power amplifier and application. 2N6315 PNP 2N6317 FEATURES: 2N6316 2N6318 NPN * Low Collector-Emitter Saturation Voltage v ce<sat = 1 0 v M»c) @ >c = 4.0 A * Excellent DC Current Gain- hFE = 20 (Min) @ lc =2.5A

2n6318

Contextual Info: 2N6317 and 2N6318 PNP SILICON POWER TRANSISTOR Available DESCRIPTION These 2N6317 and 2N6318 devices are an excellent choice for un-tuned amplifier applications. It is also ideal for general purpose power switch and amplifier applications. Microsemi also offers numerous other products to meet higher and lower power voltage

2n6318

Contextual Info: 2N6318 80 V complementary PNP silicon power transistor 8.50 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6318 Online Store 2N6318 Diodes 80 V complementary PNP silicon power transistor Transistors Integrated Circuits Optoelectronics

2N6315

Contextual Info: 2N6315 2N6316 2N6317 2N6318 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 series devices are complementary silicon power transistors, mounted in a hermetically sealed metal case,

diode zener c25

Abstract: zener DIODE C25 c25 zener diode
Contextual Info: ISCFdÈ´òþ ´òþ text/html About News Contact keyword search: Employment Site Home part number search: 2N6318 #23927 RFQ/Sample Package PNP Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating

sc 3198 transistor

Abstract: 2N6315 2N6317 2N6318 2N6316 8002 Amplifier IC
Contextual Info: MOTOROLA SC 6367254 {XSTRS/R T t. F> MOTOROLA SC XSTRS/R F D F |b 3 b 7 5 5 4 O D ñ D 4 b 4 ^ ^ |_ 96D 80464 D_ - T - 3 3 - / 3 NPN MOTOROLA 7 er 3 2N6315, 2N6316 SEM ICO NDUCTO R PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON

2sc897 hitachi

Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

te 2443 MOTOROLA transistor

Abstract: 2N6318 2N63 TO-213AA
Contextual Info: MOTOROLA SC X S T R S /R 1 HE D I F b3b?254 G0ô4b30 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE SILICON POWER TRANSISTORS , . . designed for general-purpose power amplifier and switching applications, 6 0 -8 0 VOLTS

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS 1*FE@ I C/ V c E PNP TO-66 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A V cE O V cE (sat) pr D * WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125

13T1

Contextual Info: OPTEK TECHNOLOGY INC 4flE D • fc^TaSflO 00D 13T1 T ib Product BulletinOTC1550 August 1990 PNP Power Switching Transistor Die ■ OTK ^ 3 ? . ^ 'T -¥ 7 '\y Type 0TC1550 120V, 10A Applications • Inverters • Switching Regulators Through 50 KHz. • Medium Current Motor Driver

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2NXXXX

Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
Contextual Info: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N3738 equivalent

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

5N520

Contextual Info: General Transistor Corporation CASE le MAX V c e o (s u s ) = NPN Power Transistors VCE(SAT) IC/1B (V®A/A) VBE IC/VCE (V®A/V) 25-100 @ .5/4 40-200 @.5/10 25-100 @1/10 25-100 @1/10 1 @ 5/.05 5 @ 1/.125 .75 @ 1/.125 .75 @ 1/.125 1.7 @.5/4 1.4@ 1/10 .25