2N6216
Abstract: 2N6217
Contextual Info: Product Specification www.jmnic.com 2N6216 2N6217 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current ,high power dissipation APPLICATIONS ・For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base 2 Emitter
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2N6217
Abstract: 2N6216
Contextual Info: SavantIC Semiconductor Product Specification 2N6216 2N6217 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ,high power dissipation APPLICATIONS ·For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base
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2N6217
Abstract: 2N6216 MA8020
Contextual Info: Inchange Semiconductor Product Specification 2N6216 2N6217 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current ,high power dissipation APPLICATIONS ・For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base
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SDT13305
Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251
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2n28112n28122n28132n2814+112n40702n40712n43012n50062n50082n5218sdt13305sdt12302sdt13303sdt7603sdt7732
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2u 62 diode
Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15
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bd610bds11bds142sd213+152n50062n50072n56232n56242sa7462sa8772u 62 diode2sc1115bd313kt808bmsdt76032u 87 diode2u 45 diodediode 2u 66bdy19
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2NXXXX
Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
Contextual Info: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z
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2n61922n61932n62112n6212+112n62132n62142n62152n62162n62172n62262nxxxxsilicon transistor corp2n6357transistor 2n62742nxxx
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2N5286
Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT
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2n26572n26582n2877o-111+132n28782n28792n28802n52862n5290solitron2n5740sdt13305sdt3775sdt855022n439s2n56102n6562
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SILICON TRANSISTOR CORP
Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
Contextual Info: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O
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2n61922n61932n62112n6212+132n62132n62142n62152n62162n62172n6226silicon transistor corp2nxxxxto53 package2nxxxtransistor 2n62742n6353transistor to63
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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9300
Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
Contextual Info: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30
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2n50042n50052n50082n5009+132n50382n50392n50772n50852n51492n515093002n55612n53302n37292n40252n65619301
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2n6217
Abstract: T7736
Contextual Info: mtMujKgT atm,© _ _Jfolitran MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER Devices, me NPM EPITAXIAL PLANAR POWER TRANSISTOR FORMERLY 77 CONTACT METALLIZATION B a s e a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C h ro m e Nickel S ilv e r" a lso a v a ila b le )
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203mm200pfsdt7731t7736+22n62162n6217
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2sa914o-1262sa9002sc2556+112sc2556alm317ko-220lm317tthinki transistor catalogaudio amplifier icbd249c catalogaudio high power amplifier3dd3012sc32292sa747
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D1192
Abstract: 2SC3593 BOT93 diode GG 71 RCA1C07 acrian inc diode 2U 66
Contextual Info: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 25 30 40 2S0369Y SOT701S SOT701S SOT701S 2N3920 2N50S4 2SC3255R 2SC3593 2SC3255S Solitron PPC Product PPC Product Sid St Dvcs See Index See Index See Index Mallory Indust Mexi See Index :sanyo Elect
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ot7a02ot7b01ot76022n3919+112n3715ptc1162s036902n5622d11922sc3593bot93diode gg 71rca1c07acrian incdiode 2u 66
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2N6216
Abstract: 2N6217 SDT7731 SDT7736 100V transistor npn 5a
Contextual Info: „¿/outran [ P t M D M ? © Ä T T Ä IL MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices. Inc. CHIP NUMBER NPIM EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 77 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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203mmt150v12mhz200pf+5sdt7731sdt77362n62162n6217100v transistor npn 5a
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2N6216
Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC TS 95 D 02 8 5 7 »E "Jfl3 tia tiD s o D o a a s ? 7 [^ © yNgTr ©ÄTTM, © « M EDIUM TO HIGH VOLTAGE, FAST SWITCHING ÆsiÊroii Devices. Inc CHIP N U M BER N PN EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 77
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203mmultrasonical200pfsdt7731sdt7736+22n62162n6217
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