2SA914 Search Results

2SA914

Abstract: 2SC1953
Contextual Info: Product Specification www.jmnic.com 2SA914 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1953 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency power pre-amplifier PINNING PIN DESCRIPTION

2SA914

Abstract: 2SC1953
Contextual Info: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC cu rre n t gain • High collector-em itter voltage V (Iife ceo ) • Low collector output capacitance (Cot)

2SA914

Abstract: 2SC1953
Contextual Info: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC current gain Iife • High collector-emitter voltage (Vceo) • Low collector output capacitance (C„b)

2SA0914

Abstract: 2SA914 2SC1953
Contextual Info: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SA0914

Abstract: 2SA914 2SC1953
Contextual Info: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 2SA914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage

2SA914

Abstract: 2SC1953
Contextual Info: Inchange Semiconductor Product Specification 2SA914 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier PINNING PIN DESCRIPTION

2SA0914

Abstract: 2SA914 2SC1953
Contextual Info: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO −150

Contextual Info: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 Symbol 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)

2SC1953

Abstract: power transistors semiconductor product 2SA914 NPN Power Transistors
Contextual Info: SavantIC Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SC1953

Abstract: 2SA914 h11a
Contextual Info: Power T ransistors 2SG1953 2SC1953 Silicon NPN Epitaxial Planar Type ;• Package Dimensions AF Power Pre-Amplifier Complementary Pair with 2SA914 ■Features • High cd llector-em itter voltage V ceo • Small collector output capacitance (C„b) • Optimum for 60—100W p re-d riv er in com plem entary pair w ith 2SA914

2SA914

Abstract: 2SC1953
Contextual Info: PANASONIC INDL/ELEKiSEMI} 75C D J 1^35654 □00fl77feJ □ h *_ T ‘ 5 3 " 7 2SA914 2SA914 '> iJ zj > PN P x fcf£ ^r'> 7 Jl^y Is PNP Epitaxial Planar '(g;^;SWi HU liltiffl/AF Power Pre-amplifier 2SC1953 >J/Complementary Pair with 2SC1953 • ^/Features

Contextual Info: 2SA914R Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m

2sa899

Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Contextual Info: - 16 - Ta=25£C, *EP(âTc=25t M 2SA847A 2SA854 2SA854S 2SA872 2SA872A 2SA874 2SA874M 2SA879 2SA881 2SA885 2SA8S6 2SA887 2SA893 2SA893A 2SA898 2SA899 2SA900 2SA904A 2SA913 2SA913A 2SA914 2SA915 2SA916 2SA921 2SA929 2SA930 2SA933 2SA933LN 2SA 933S 2SA933SU

2SA0914

Abstract: 2SA914 2SC1953
Contextual Info: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 1.9±0.1 0.75±0.1 Symbol Rating Unit Collector to base voltage

POWER TRANSISTORS

Abstract: 2SC1953 semiconductor product 2SA914
Contextual Info: Inchange Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

NEC 1357

Abstract: 2sa1175 2SB710 2SA914 2SA937 2SA1091 2SA953 2SA1309A 2sa1361 2SA1142
Contextual Info: 29 - a « a « Manuf. Type No. ;¥ Z SANYO U 2 TOSHIBA B S NEC ÌL HITACHI m ± FUJITSU ì1 tfl T MATSUSHITA a £ 2SA953 2SA1309A 2S A 1352 Z 2SA1142 2SA914 2 SA Z 2 S A 1 3 51 / 1 353 > h m. MITSUBISHI □ — ROHM A 2SA937 2SB1011 # 2SA1156 2SB1011 2SB942A

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

2SA914

Abstract: 2SC1953
Contextual Info: SavantIC Semiconductor Product Specification 2SA914 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier PINNING PIN DESCRIPTION

2SA0914

Abstract: 2SA914 2SC1953
Contextual Info: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2

2SA0914

Abstract: 2SA914 2SC1953
Contextual Info: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Symbol 0.75±0.1 Rating 4.6±0.2 Collector-base voltage (Emitter open)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)