HFE1 Search Results

mosfet p 3055

Abstract: IEC320-C16 HFE1600-24 HFE1600-12 1200W MOSFET power HFE1600 HFE1600-48 170VAC MOSFET Module 24v 200A IEC-60068-2-64
Contextual Info: HFE1600 Series 1600W 1U Front End Power Supplies ‹ ‹ ‹ ‹ 1U rackmount containing up to 5 units Internal ORing MOSFET & Current Share High Efficiency Up to 8000W in 1U rack Key Market Segments & Applications Power for Distributed Power Architecture Industrial Automation

2N4260

Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
Contextual Info: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000

12v 1200W DC POWER SUPPLY

Abstract: 1608w 24V-32V HFE1600-12 HFE1600-24 HFE1600 MOSFET Module 24v 200A 1200W MOSFET power 240mV
Contextual Info: • 25.2W/in3 power density • Internal ORing MOSFET & Current Share • Climate Savers Computing efficiency standards • Up to 8000W in 1U rack • Status monitoring signals • PMBus option HFE1600 Series Key Market Segments & Applications Power for Distributed Power Architecture

BF178

Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

F13S

Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

2N3571

Abstract: 2N3570 2N4253 2N4252 2N3571 NPN BFT32 BFT33 BFT34 BFT35 BFT36
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s Polarity High C u rren t A m p lifiers and S w itch es Device Type M axim um ratings Case BV BV BV CBO CEO EBO IC M Ic V V mA mA min. max. mA min. 30 30 30 30 30 30 V BFT32 hFE1 hFE 2 BF T33 BF T34 NPN

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

1200W MOSFET power

Abstract: WASHER HEAD M3x6 1200w class d circuit IEC-60068-2-64
Contextual Info: HFE1600 Series 1600W 1U Front End Power Supplies Features u 1U rackmount containing up to 5 units u Internal ORing MOSFET & Current Share u High Efficiency u Up to 7600W in 1U rack u Full array of signals available Key Market Segments & Applications Specifications

Contextual Info: Equivalent circuit SAH02 2 1 Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode µA IEBO VEB=–10V –10max µA V BR CEO IC=–10mA –30min V ICBO VCEO –30 V VEBO –10 V IC –3 A hFE1 VCE=–2V, IC=–1A 100min IB –0.5 A hFE2 VCE=–2V, IC=–0.5A

300V regulator

Abstract: 2SC5271 FM20
Contextual Info: 2SC5271 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 200 V IEBO VEBO 7 V V BR CEO 5(Pulse10) A hFE1 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A 1.0max Tj 150 °C VBE(sat) IC=2.5A, IB=0.5A 1.5max V –55 to +150

2SA1755

Contextual Info: 2SA1755 Silicon PNP Epitaxial Application TO-92MOD. High speed switching Table 1 Ordering Information Type No. hFE1 ———————————————————— 2SA1755B 50 to 100 ————————————————————

Contextual Info: HFE1600 Series 1600W 1U Front End Power Supplies Features  1U rackmount containing up to 5 units  Internal ORing MOSFET & Current Share  High Efficiency  Up to 7600W in 1U rack  Full array of signals available Key Market Segments & Applications

n3806

Abstract: 2n3811 motorola 2N3813 2N4942 2n3817 motorola 2N3816 2N3807 2N3808 2N3810 2N3810A
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) a v BE mV Max hFE2 Gp dB Min {on ns Max VC£ <C (sat) _ Volts I l B Max I to * w 71 Subscript ID Ref. Point TYPE NO. ° 2 § >f r? hFE1 0.5 0.5 0.5 0.5 0.5 A A A A A 60 60 60 60 60

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

MARKING CODE B3 sot-89

Abstract: MY sot-89 NPN medium power transistor in a SOT package
Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking

shottky diode 5a

Abstract: SAH02 ma162
Contextual Info: Equivalent circuit SAH02 2 1 Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode µA IEBO VEB=–10V –10max µA V BR CEO IC=–10mA –30min V ICBO VCEO –30 V VEBO –10 V IC –3 A hFE1 VCE=–2V, IC=–1A 100min IB –0.5 A hFE2 VCE=–2V, IC=–0.5A

Contextual Info: KSC2982 KSC2982 Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board SOT-89 1 1. Base 2. Collector 3. Emitter

1200W MOSFET power

Abstract: 1608w HFE1600 HFE1600-12 HFE1600-24 HFE1600S1U IEC61068-2-27
Contextual Info: • 25.2W/in3 power density • Internal ORing MOSFET & Current Share • Climate Savers Computing efficiency standards • Up to 8000W in 1U rack • Status monitoring signals • PMBus option HFE1600 Series Key Market Segments & Applications Power for Distributed Power Architecture

KSC2982

Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking

2N290

Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018
Contextual Info: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200

2N3053 equivalent

Abstract: bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002
Contextual Info: Metal Can Complementary Pairs Maximum ratin ps BV Case | Device Type Polarity Core Drivers BV BV CBO CEO EBO ICM V V V mA hFE1 Ic mA min. max. Ic mA HFE2 fT min. min. max. MHz VCE sat IC mA V 2N3724A NPN 2N3725A NPN T039 T039 50 80 30 50 6 6 1200 1200 100

KSC2982

Contextual Info: KSC2982 NPN EPITAXIAL SILICON TRANSISTOR STROBE FLASH MEDIUM POWER AMPLIFIER SOT-89 • Excellent hFE Linearity: hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage: VCE sat =0.5V • Collector Dissipation PC=1~2W: Mounted on Ceramic Board ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

PMP4201G

Abstract: PMP4201Y PMP4501G PMP4501Y PMP5201G PMP5201Y MARKING CODE SMD IC Table of smd IC marking codes TRANSISTOR SMD CODE PACKAGE SOT353 TRANSISTOR SMD MARKING CODE s7
Contextual Info: PMP4201G; PMP4201Y NPN/NPN matched double transistors; hFE1/hFE2 = 2 % Rev. 01 — 14 February 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface Mounted Device SMD plastic packages. The transistors in the SOT363 (SC-88) package are fully isolated internally.

KSC2982

Contextual Info: KSC2982 KSC2982 Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board SOT-89 1 1. Base 2. Collector 3. Emitter