IC T 4A 8 Search Results

Contextual Info: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)

kta124

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1243 e p it a x ia l p la n a r pnp t r a n s i s t o r STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100~320 Vce=-2V, Ic=-0.5A . • hFE=70(Min.) (Vce=-2V, Ic=-4A). • Low Collector Saturation Voltage.

D-733

Abstract: D733 2SC2913 AC74 I0A10
Contextual Info: í ó s h í b Sb T T d is c r é t e / op t o> 9097250 TOSHIBA DE | T m ? 2 S D 56C <D IS C R E T E /O P T O 2SC2913 features INDUSTRIAL APPLICATIONS Unit in nun C O N V ERT ER A P P L IC A T IO N . : . Excellent Switching Times : tr= l .0/is Max.) , tf=1.0/ts(Max.) at IC=4A

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1241 e p it a x ia l p la n a r pnp t r a n s i s t o r STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • h FE= 1 00 ~ 32 0 V ce=-2V , Ic=-0.5A . • hFE=70(Min.) (V ce=-2V , Ic=-4A). • Low Collector Saturation Voltage.

2SD1555

Abstract: 2SD1555 equivalent
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE CO LO R TV H O R I Z O N T A L O U T P U T A P P L I C A T I O N S . FEATURES: . High Voltage :Vggo= T500V . Low Saturation Voltage: . High Speed sat = 5V(M a x .)(Ic=4A , I b = 0 .8A) :tf = 1.0(js(Max .) . Built-in Damper Type

PJ1386

Abstract: PJB1386 PJB1386CY
Contextual Info: PJB1386 PNP Epitaxial Silicon Transistor T he PJ1386 is an epitaxial planar type PNP silicon transistor SOT-89 TO-252 FATURES z Excellent DC current gain characteristics z Low VCE sat VCE(sat) = -0.35V (Typ) (IC/IB = -4A/-0.1A) Pin: 1.Base ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ )

power transistor d2498

Abstract: d2498 transistor D2498 power transistor d2498 test circuit TV d2498 2SD2498
Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR T O SH IB A TECHNICAL 2SD2498 DATA SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV • • Low Saturation Voltage : VCE(sat) = 5V(Max.)(IC = 4A, IB = 0.8A) High Speed 3.0 ±0.3 p-

Contextual Info: r T 'l PAI9 • PA19A A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • A P P L IC A T IO N S H O T L IN E 8 0 0 5 4 6 -A P E X 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • VERY FAST SLEW RATE — 900 V/ns POWER MOS TECHNOLOGY — 4A peak rating

Contextual Info: Rectifier Diode Surface Mounting Device Single Diode •*W fN -äsH OUTLINE DIMENSIONS Unit : mm Package : 2F D4F60 + 600V 4A Ü 43 f i 2.5 PyHa-t W • B s t t ic f f ln s f lis t t 6.1 Date code Standard soldering pad O iS I fsm C0.8 («fiLtCDSnîEOLYCB:, }£EP tt«£C !B 18<

Contextual Info: MITSUBISHI ASTTLs M74AS1808P HEX 2-IN PU T AND DRIVER DESCRIPTION The M 7 4A S 1 808 P is a sem iconductor integrated circuit PIN CONFIGURATION TOP VIEW consisting of six 2-input positive-logic A N D buffer gates, usable as n egative-log ic OR buffer gates.

TC40H002P

Abstract: TC40H002
Contextual Info: T O S H IB A IN TE G R A TE D C IR C U IT T E C H N IC A L DATA T P A n U n I U l U n U TC40H 002 P IN n O D U L I / F / • C 2MOS s il ic o n d ig it a l in t e g r a t e d c ir c u it m o n o l it h ic QUAD 2 - IN P U T NOR GATE CONNECTION V DE 4Y 4B 4A

Contextual Info: DESCRIPTION The M 7 4A S 1 832 P is a sem iconductor integrated circuit PIN CONFIGURATION TOP VIEW consisting of six 2-input positive-logic O R buffer gates, IN P U T 5 B —•[ 7 OUTPUT 6 Y — |T usable as n e g ative-log ic A N D buffer gates. f 6a^GE

2SC1172 TOSHIBA

Abstract: A8A Transistor TRANSISTOR T-03 2sc1172 Toshiba 2SC1172 AC42C BA RV
Contextual Info: 2 s c 1172 SILICON NPN T R IP L E D IFFU SE D MESA TRANSISTOR II t \yií*f filetti tlfñ O Unit in mm o Color TV Horizontal Output Applications • M Œ T t ; i f 02SOMÄX. <¡>2lÆMAxI t S V0B0= 1500V v 0E sat = 5V (Max.) : +a o9 xo -a o 3 (Ic = 4A, Ib =Q8A)

GJ1386

Contextual Info: ISSUED DATE :2005/07/25 REVISED DATE : GJ1386 P NP EP ITAX I AL S ILI CO N T RANSI STOR Description The GJ1386 is designed for low frequency applications. Features Low VCE sat =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain characteristics Package Dimensions

Contextual Info: F-205-1 S" T .0 2 5 Mates w ith: SSW, SSQ, SSM, BSW, ESW, ESQ, BCS, SLW, CES, IDSS, IDSD, HLE TER M IN A L STR IPS s o T IW Iy H IC 5>IVI 1 II 1 SPECIFICATIONS LEAD STYLE N 0 - PINS PER ROW AMBIENT TEMPERATURE CURRENT RATING 20°C 7A 40°C 6A 60°C 4A 80°C

GM1386

Contextual Info: CORPORATION GM1386 ISSUED DATE :2004/02/09 REVISED DATE :2005/08/24B PNP E PITAX I AL P L ANAR T RANS ISTO R Description The GM1386 is an epitaxial planar type PNP silicon transistor. Features Low collector saturation voltage : VCE sat = -0.35V(Typ.) @ IC/IB=-4A/-0.1A

Contextual Info: t^T T E IC AN6295NK AN6295NK T= l7 1 Hi-Fi Dual Hi-Fi VTR Peak-Noise-Reduction Circuit • fit 9 Unit : mm A N 6 2 9 5 N K !i, - ' O r - I V T B v' -i X i) r ? 1^-7 7 ' T - X t r - f f - 5 ■/ ? > > i D30 D29 D28 D27 D26 D>25 D24 D23 1a !> ¥ * « 2a 3a 4a

37732S4AFP

Contextual Info: I • ^24=1020 Ü G l S b 7 b 27=5 ■ M I T 4 M ITSUBISHI M IC RO CO M P U T ERS M 37732S 4F P ,M 37732S 4A F P M 37732S 4B FP M IT S U B IS H I¡H IC M P T R /M IP R C H E » . DESCRIPTION 16-BIT CMOS M ICROCOM PUTER PIN CONFIGURATION TOP VIEW) The M 37732S4FP is a single-chip microcomputer designed

Contextual Info: HARRIS SEMICOND SECTOR D45VM Series SbE D • 43G2271 004GÛH2 707 « H A S File Number 2357 Silicon P-N-P Transistors Complementary to the D44VM Series Features: ■ Very Fast Switching ts < 500 ns resistive t f < 75 ns • Very low VCE Sat S 0.4V @ IC = 4A

GM2098

Contextual Info: CORPORATION GM2098 ISSUED DATE :2006/06/22 REVISED DATE : N P N EP I TAXI AL P L AN AR T R AN S I ST O R Description The GM2098 is an epitaxial planar type NPN silicon transistor. Features Low collector saturation voltage : VCE sat = 0.25V (Typ.) @ IC/IB=4A/0.1A

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2414 SM U nit in mm HIGH CURRENT SW ITCH IN G APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. • Low Saturation Voltage : V q e (s a t)= 0.5V (M ax.) (at Ic= 4A ) M A X IM U M R ATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

g3je

Abstract: 2SB1019
Contextual Info: y 'j 3 >PNP=M fôf$ pcTM o -f 7f 2SB1019 ym > if I - o P ? v m títfjíh 3 3 : IC = - 7 A ? lä io a i± ^ 'ig ;^ 0 : VcE(sat) = - 0 .4 V ( f t *) ( I C = -4A ) 2SD1412 t 3 > 7 " 'J ^ > ? >; (; 4- 19 £ - f 0 ft*Æ :fê (T a = 25°C) Il 3 L' 5 3 •^ - X Psi m a

GSB1386

Contextual Info: GSB1386 1/3 P N P E PI TA XI A L S I L I C O N T R A NS I S TO R Description The GSB1386 is a epitaxial planar type PNP silicon transistor . Features *Low VCE sat . VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A). *Excellent DC current gain characteristics.

s32p

Abstract: 2p m 1y
Contextual Info: MITSUBISHI ASTTLs M 74A S 32P QUADRUPLE 2-IN PU T POSITIVE OR GATE DESCRIPTION PIN CONFIGURATION TOP VIEW The M 7 4A S 3 2P is a sem iconductor integrated circuit consisting of four 2-input positive-logic OR gates, us­ ab le as n egative-log ic A N D gates.