2SB0950A Search Results

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB0950 2SB950 , 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit: mm Collector-base voltage (Emitter open) Symbol 2SB0950 Rating Unit −60 VCBO V 16.7±0.3 14.0±0.5 • Absolute Maximum Ratings TC = 25°C 4.2±0.2

Contextual Info: Power Transistors 2SB0950, 2SB0950A Silicon PNP epitaxial planar type Darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO −60 V 2SB0950 −60 VCEO 16.7±0.3

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB0950, 2SB0950A 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO −60 V 2SB0950 −60

2SB0950

Abstract: 2SB0950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 16.7±0.3 4.2±0.2 • High forward current transfer ratio hFE • High-speed switching

Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 16.7±0.3 4.2±0.2 φ 3.1±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB0950 2SB950 , 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 16.7±0.3 4.2±0.2 φ 3.1±0.1 M Di ain sc te on na

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB0950, 2SB0950A 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO −60 V 2SB0950 −60

Contextual Info: Power Transistors 2SB0950 2SB950 , 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 16.7±0.3 4.2±0.2 φ 3.1±0.1 Collector-base voltage

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB0950 2SB950 , 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 2.7±0.2 2SB0950 Collector-base voltage (Emitter open) Rating Unit −60 VCBO V 14.0±0.5 Symbol −80 2.54±0.3 Collector-emitter voltage 2SB0950

2SB0950

Abstract: 2SB0950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB0950 and 2SB0950A 16.7±0.3 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one

darlington power pack

Abstract: ft 103 DARLINGTON Vbe 8 V 2SB0950 2SB0950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 4.2±0.2 2.7±0.2 16.7±0.3 φ 3.1±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB0950

Abstract: 2SB0950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 2.7±0.2 Rating Unit VCBO 60 V 2SD1276A 2.54±0.3 VCEO Emitter-base voltage Collector open VEBO 5 V IC 4 A Peak collector current TC = 25°C

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington Unit: mm • Absolute Maximum Ratings Parameter Symbol Collector to 2SD1276 base voltage 2SD1276A Collector to 2SD1276 emitter voltage 2SD1276A Ratings Unit 60 VCBO V 80

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>