2SB941
Abstract: 2SB941 P 2sb941a 2SB941 Q 1266a
Contextual Info: JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION
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2sb9412sb941ao-220fa2sd1266/1266a+32sb941 p2sb941 q1266a
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2SD1266
Abstract: 2SB941 2SB941A 2SD1266A
Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A • Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A
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2SB941 datasheet
Abstract: 2SB0941 2SB0941A 2SB941 2SB941A 2SD1266 2SD1266A
Contextual Info: Power Transistors 2SB0941, 2SB0941A 2SB941, 2SB941A Silicon PNP epitaxial planar type Unit: mm 4.2±0.2 5.5±0.2 2.7±0.2 Collector to base voltage 2SB0941 Collector to emitter voltage 2SB0941 Rating Unit VCBO −60 V −60 VCEO V −80 2SB0941A VEBO −5
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2sb09412sb0941a2sb9412sb941a+32sb941 datasheet2sd12662sd1266a
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2SD1266
Abstract: 2SD1266A 2SB0941 2SB941 2SB941A
Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0941 2SB941 and 2SB941A (2SB941A) Parameter Symbol Rating Unit VCBO 60 V Collector to base voltage 2SD1266 Collector to emitter voltage
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2sd12662sd1266a2sb09412sb941+12sb941a
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2SB941
Abstract: 2SB941 datasheet 1266a 2SB941A 2SB941 P
Contextual Info: Inchange Semiconductor Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification
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2sb9412sb941ao-220fa2sd1266/1266a+32sb941 datasheet1266a2sb941 p
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Contextual Info: Power Transistors 2SB0941, 2SB0941A 2SB941, 2SB941A Silicon PNP epitaxial planar type Unit: mm 5.5±0.2 2.7±0.2 16.7±0.3 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Collector to base voltage 2SB0941 Collector to emitter voltage 2SB0941 2SB0941A
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2sb09412sb0941a2sb9412sb941a+22sd12662sd1266a
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2SB941
Abstract: 2SB941A 2SD1266 2SD1266A 2SB941 Q
Contextual Info: Powër Transistors 2SB941, 2SB941A 2SB941, 2SB941A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD 1266, 2SD 1266A U nit ! mm 4.4max. 5.7 max. • Features • H igh DC c u r re n t gain Ii f e and good lin earity
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2sb9412sb941a2sd12662sd1266a+12sb941 q
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2SB941
Abstract: 2sb941a
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complementary to type 2SD1266/1266A APPLICATIONS ·For low-frequency power amplification PINNING
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2SB941
Abstract: 2SB941 datasheet 2SB941A 2SD1266 2SD1266A 1405Q
Contextual Info: Power Transistors 2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB941 base voltage 2SB941A Collector to 2SB941 Ratings
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2sb9412sb941a2sd12662sd1266a+22sb941 datasheet1405q
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2SB941
Abstract: 2SB941A 2SD1266 2SD1266A
Contextual Info: Powér Transistors 2SB941, 2SB941A 2SB941, 2SB941A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD 1266, 2SD 1266A Unit ! mm 4.4max. 2.9max. • Features • H igh DC c u r re n t gain Iife and good lin earity
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2sb9412sb941a2sd12662sd1266a |
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2SD1266 R
Abstract: 2SD1266 2SB941 2SB941A 2SD12 2SD126 2SD1266A VCE-80
Contextual Info: Power Transistors 2SD1266, 2 SDÌ 2Ó6A S D 1266, 2S D 1266A Silicon NPN Triple-Diffused Planar Type 2 Package Dimensions Power Amplifier Complementary Pair with 2SB941, 2SB941A • Features Unit ! mm 4.4max. 10.2max. 5.7max. 2.9max »I • High DC current gain I i f e and good linearity
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2sd12662sd1266a2sb9412sb941a+42sd1262sd1266 r2sd12vce-80
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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761b nec
Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338
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2sb9272sb7392sb10102sa1705+122sb7402sa6842sb10352sb10412sa133s2sa1313761b nec761a2sa684 nec2sb7372sb686761-b
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PA8080
Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)
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2sd12452sd12462sd12472sd1248k+92sd12492sd1249a2sd12502sd1259a2sb9372sd1260pa80802sd1250a2sd1251
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2SB962
Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Contextual Info: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»
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2sb938a2sb9392sb939a2sb940+102sb940a2sb9412sb947a2sb951a2sb9522sb952a2sb9622sd12882sb941a2sb942
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2SD1039
Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220
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2sc19842n42332sb761a2sb929a+82sb941a2sd1252a2sd1266a2sd856abdt31b2sd1039to-53buw64a
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2SA985 NEC
Abstract: 2s8834 2SB56 2SB596 2SA985 toshiba 2sb555 2SB834 2SB508 2SB537 2SA836
Contextual Info: s € tt T y p e No. 2SB 153 2SB 154 2SB 155 2SB 176 " 2SB 302 2SB 370 2SB 370A 2 Sß 434 , □ SS a X 3: SAN YO ^ M TOSHIBA s t NE C il H IT ACHI ±L 2SB 561 ±L 31 2 SB 561 T 4 ii Ä S 2SB 435 ^ 2SB 444 0 a a iz 2SB 492 - = # 2SB 496 iL 2SB 502 Ä ä 2SB 443
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2sb5612sb562sa8362sb562+102sb507zsb8342sa9852sa985 nec2s88342sb596toshiba 2sb5552sb8342sb5082sb537
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2SB909
Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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mn115pmn116pmn1201amn1201m+15mn1201smn1202mmn1204amn1204bmn1204emn1204fan6512nmn1225mn1280mn6520mn6130mn6147cmn12c261dmn12c201dmn3107
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2SB667
Abstract: MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404
Contextual Info: Discontinued Types • Discontinued •m o s L S Is Type No. Alternative MN1001 Type No. Alternative Type No. — MN14T6 MN1418 — MN15621 MN110 MN1101 — MN1420 - — MN1421 - MN115 - MN1425 MN1427 - MN116 — MN1200 - MN1441 MN1201 — MN1202 - MN1204
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mn14t6mn1418mn1420mn1421+16mn1425mn1427mn1441mn1442mn1432mn1450b2sb667mn41c4256-08mn41256a08mn187164mn41256a-08mn2114-33sk129mn1455lfmn41464a08mn6404
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2SB1013
Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
Contextual Info: 60 - $! tt « Type No. 2SB 1013 v 2SB 1014 ^ 2S8 1015 - 2SB 1016 , 2SB 1017 2SB 1018 2SB 1019 « Manuf. -_ 3IC SANYO H. S S TOSHIBA b m NEC ±L HITACHI m ± FU JITSU i3 T fc' MATSUSHITA = m M IT SU B ISH I □ - Jx ROHM 2SA1160 2SB1068 2SB976 2SB1426 2SA1020
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2sa11602sb10682sb9762sb1426+162sa10202sb11162sb6212sb1q44m2sb11342sb10942sb10132sa9342sb1370nec 10262s8972sb10672sd22382sa12432sb10412sb564
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2sa914o-1262sa9002sc2556+112sc2556alm317ko-220lm317tthinki transistor catalogaudio amplifier icbd249c catalogaudio high power amplifier3dd3012sc32292sa747
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D1274A
Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691
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2sc46272sc5021-2sa17902sc4626+162sc46552sc48092sc52952sc48082sa18062sd2345d1274ab1317c4714d1707b1108c2258 transistord2052 transistortransistor b11542sd2504 transistorb1398
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