2SD1028
Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A
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2sd10012sb8002sd10022sd1003+152sd10042sd10052sb8042sd10062sb8052sd10072sd10282sd10312sd10362sd10942sd10872sd10132sd10192sd1037equivalent 2sd1028
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417
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2SD1039
Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220
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2sc19842n42332sb761a2sb929a+82sb941a2sd1252a2sd1266a2sd856abdt31b2sd1039to-53buw64a
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SD1036
Abstract: 2SD1038 2SD1041 2SD1040 t03h 2SD1010 2SD1007 2sd1011 2SD1017 2SD1037
Contextual Info: - 232 - JfcfcÊfë Tfij -t? f± £ ffl JÈ T a = 2 5 cC , * E P I à T c = 2 5 lO VCBO Vc e o icÎDO (V (V) (A) (W) f t tt (Ta=25°C> (W) (max) ÎuA ) VCB (min) [*EPfàtyp{I] VcEÍsat ) ^VsEÎsat) E 1CBO (max) (V) \maxj (V) ic/'ÎE U) Vc e (V) (V) le (A)
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2sd9992sd10002sd10012sd1005+142sd10062sd10072sd10092sd10412sd10422sb8162sd10362sd10382sd1040t03h2sd10102sd10112sd10172sd1037
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