2SB939 Search Results

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Contextual Info: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching

2SB0939

Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
Contextual Info: Power Transistors 2SB0939, 2SB0939A 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation

2SB0939

Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
Contextual Info: Power Transistors 2SB0939 2SB939 , 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0939A Collector-emitter voltage 2SB0939 (Base open) 2SB0939A VCEO Emitter-base voltage (Collector open)

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A
Contextual Info: Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit: mm For midium speed power switching Complementary to 2SB939 and 2SB939A 2.0 Unit: mm V 80 60 VCEO Unit 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage

2SB962

Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Contextual Info: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0939A Collector-emitter voltage 2SB0939

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A DSA003711
Contextual Info: Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation Ta=25°C 45 PC

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A
Contextual Info: 2SD1262, 2SD1262A Power Transistors 2SD1262, 2SD1262A Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SB939, 2SB939A. • Features . • High DC c u rre n t gain Iifê • High speed switching '

2SB0939

Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm 3.4±0.3 6.0±0.2 1.0±0.1 2SB0939 Collector-base voltage (Emitter open) Unit VCBO −60

Contextual Info: Power Transistors 2SD1262, 2SD1262A 2SD1262, 2SD1262A Package Dim ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max. 8.7max. t"—* l.l.max. 6.5 max. Medium Speed Pow er Switching Com plem entary Pair with 2SB939, 2SB939A. r— i

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0939A Collector-emitter voltage 2SB0939

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm 1.0±0.1 VCBO −60 V 2 −80 Collector-emitter voltage 2SB0939 (Base open) 2SB0939A

IB500

Abstract: 2SB0939 2SB939 2SB939A 2SD1262 2SD1262A
Contextual Info: Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit: mm For midium speed power switching Complementary to 2SB0939 2SB939 and 2SB939A (2SB939A) 2.0 Unit: mm V 80 60 VCEO Unit 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 V 80

2SD1262

Abstract: panasonic 2SD
Contextual Info: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A • Package Dimensions Unit ! mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. Medium Speed Power Switching Complementary Pair with 2S D 1262, 2SD 1262A I*- * l.lmax. 6.5max. ■ Features • High DC cu rre n t gain hFE

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SB934

Abstract: 2SD1257
Contextual Info: Power Transistors 2 S B 9 3 4 2SB934 Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S D 1 2 5 7 U nit I mm • • • • 3.7 max 8.7 max. • Features h—• l.im a x 6.5 max. Low collector-emitter saturation voltage Vcf.k»»

2SB933

Abstract: 2SD1256
Contextual Info: Power T ransistors 2SB933 2SB933 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1256 U n it I mm 3.7m ax. • Features . • G o o d lin ea r ity o f D C c u r r e n t g a in l.lm ax * 6.5m ax. • L o w c o lle c t o r - e m itte r sa tu r a tio n v o lta g e VcE<sau

SGS-Ates

Abstract: sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD hFE Max ON) Min Max *T 'CBO Max tr Max (Hz) (A) (8) r (CE)sat Max (Ohms) T Oper Max Package Style <°C) Darlington Transistors, PNP (Cont'd) . . . .5 . . . .10 . . 15 .

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125