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    2SD126 Search Results

    2SD126 Datasheets (219)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD126
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 49.99KB 1
    2SD126
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 41.73KB 1
    2SD126
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.15KB 1
    2SD126
    Unknown Transistor Substitution Data Book 1993 Scan PDF 43.53KB 1
    2SD126
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 90.89KB 1
    2SD126
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.92KB 1
    2SD126
    Unknown Vintage Transistor Datasheets Scan PDF 35.55KB 1
    2SD126
    Unknown The Japanese Transistor Manual 1981 Scan PDF 108.58KB 2
    2SD126
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 80.27KB 1
    2SD126
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 45.78KB 1
    2SD126
    Unknown Japanese Transistor Cross References (2S) Scan PDF 33.63KB 1
    2SD126
    Unknown Cross Reference Datasheet Scan PDF 38.73KB 1
    2SD1260
    Panasonic NPN Transistor Darlington Original PDF 64.8KB 3
    2SD1260
    Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF 64.01KB 2
    2SD1260
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 98.33KB 2
    2SD1260
    Unknown Transistor Substitution Data Book 1993 Scan PDF 32.87KB 1
    2SD1260
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.63KB 1
    2SD1260
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 116.55KB 1
    2SD1260
    Unknown Japanese Transistor Cross References (2S) Scan PDF 32.03KB 1
    2SD1260
    Unknown Cross Reference Datasheet Scan PDF 37.61KB 1
    ...
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    2SD126 Price and Stock

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    Samtec Inc MTMM-105-02-S-D-126-009

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    Newark MTMM-105-02-S-D-126-009 Bulk 646 1
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    Sager MTMM-105-02-S-D-126-009 646 1
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    Powell Electronics MTMM-105-02-S-D-126-009 426 1
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    Master Electronics MTMM-105-02-S-D-126-009
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    Samtec Inc MTMM-108-02-S-D-126

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    Mouser Electronics MTMM-108-02-S-D-126
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    Newark MTMM-108-02-S-D-126 Bulk 516 1
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    Sager MTMM-108-02-S-D-126 516 1
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    Powell Electronics MTMM-108-02-S-D-126 341 1
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    Master Electronics MTMM-108-02-S-D-126
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    Samtec Inc MTMM-122-02-S-D-126

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    Mouser Electronics MTMM-122-02-S-D-126
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    Newark MTMM-122-02-S-D-126 Bulk 177 1
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    Sager MTMM-122-02-S-D-126 177 1
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    Powell Electronics MTMM-122-02-S-D-126 117 1
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    Master Electronics MTMM-122-02-S-D-126
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    Samtec Inc MTMM-140-02-S-D-126

    Pin Header, Mtmm-140-02-S-D-126; |Samtec, Inc. MTMM-140-02-S-D-126
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    Master Electronics MTMM-140-02-S-D-126
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    Panasonic Industry 2SD1260-P+

    Trans Darlington NPN 60V 2A 3-Pin(2+Tab) N-G1
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    Bristol Electronics 2SD1260-P+ 77 1
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    2SD126 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB942

    Abstract: 2SB942A 1267A
    Contextual Info: Inchange Semiconductor Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A


    Original
    2sb9422sb942ao-220fa2sd1267/1267a+210mhz1267a PDF

    2SB940

    Abstract: 2SB940A
    Contextual Info: JMnic Product Specification 2SB940,2SB940A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1264/1264A ・High collector to emitter voltage VCEO ・Large collector power dissipation PC APPLICATIONS ・For power amplification


    Original
    2sb9402sb940ao-220fa2sd1264/1264a+2-50ma-200v PDF

    2SB941

    Abstract: 2SB941 P 2sb941a 2SB941 Q 1266a
    Contextual Info: JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION


    Original
    2sb9412sb941ao-220fa2sd1266/1266a+32sb941 p2sb941 q1266a PDF

    2SB944

    Abstract: 2SD1269
    Contextual Info: JMnic Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications PINNING PIN


    Original
    2sb944o-220fa2sd1269-100v+110mhz PDF

    2SD1261

    Abstract: NPN triple diffused 60V 2SB938 2SB938A 2SD12 2SD1261A
    Contextual Info: P o w er T ra n s is to rs 2SD1261, 2SD1261A 2SD 1261, 2S D 1261A P ackage Dim ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max I— 8.7 max. U m ax. 6 .5 max. Pow er Amplifier C om plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A


    OCR Scan
    2sd12612sd1261a2sb9382sb938a+2npn triple diffused 60v2sd12 PDF

    2SB940

    Abstract: 2SB940A 1264a
    Contextual Info: Inchange Semiconductor Product Specification 2SB940,2SB940A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1264/1264A ・High collector to emitter voltage VCEO ・Large collector power dissipation PC APPLICATIONS


    Original
    2sb9402sb940ao-220fa2sd1264/1264a+210mhz1264a PDF

    transistor 12v 1A NPN

    Abstract: 2SB941 2SD1266
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941


    Original
    2sd12662sb94110mhztransistor 12v 1a npn PDF

    2SD1264

    Abstract: 2SB940 2SB940A 2SD1264A IC vertical panasonic
    Contextual Info: Pow er Tra n sisto rs 2 S D 1 2 6 4 , 2SD1264, 2SD1264A 2 S D 1 2 6 4 A Silicon NPN Triple-Diffused Planar Type Package Dim ensions A F Pow er Amplifier T V vertical Deflection Output Com plem entary Pair with 2SB940, 2SB940A U n it ! mm 4.4m ax. _10.2m ax.


    OCR Scan
    2sd12642sd1264a2sb9402sb940a+1ic vertical panasonic PDF

    2SB0942

    Abstract: 2SB0942A 2SD1267 2SD1267A
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc


    Original
    2002/95/ec2sd12672sd1267a2sb0942+22sb0942ao-220f-a1 PDF

    2SB0944

    Abstract: 2SD1269
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)


    Original
    2002/95/ec2sd12692sb0944sc-67+1o-220f-a1 PDF

    2SB940

    Abstract: 2SB940A
    Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1264/1264A ·High collector to emitter voltage VCEO ·Large collector power dissipation PC · APPLICATIONS


    Original
    2sb9402sb940ao-220fa2sd1264/1264a+2-200v10mhz PDF

    2SD1266

    Abstract: 2SB941 2SB941A 2SD1266A
    Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A • Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A


    Original
    2sd12662sd1266a2sb9412sb941a PDF

    2SB0939

    Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
    Contextual Info: Power Transistors 2SB0939, 2SB0939A 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation


    Original
    2sb09392sb0939a2sb9392sb939a+22sd12622sd1262a PDF

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Contextual Info: Power Transistors 2SB0938, 2SB0938A 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB0938A –5 V Peak collector current ICP –8 A Collector current


    Original
    2sb09382sb0938a2sb9382sb938a+22sd12612sd1261a PDF

    2SD1265 equivalent

    Abstract: 2SD1265
    Contextual Info: 2SD1265 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original
    2sd1265sc-672sd1265 equivalent PDF

    te 1819

    Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
    Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =


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    2sd18132sd18142sd16672sd1406+152sd21072sd21052sd12672sd1445a2sd12502sc4331te 18192sd18782sc42112sd16492sd185618152sc47232sd17072sd1929 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm Parameter Collector-base voltage (Emitter open) 16.7±0.3 Symbol Rating Unit VCBO 350


    Original
    2002/95/ec2sd12632sd1263a2sd126nteed PDF

    Pc6-080

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type darlington Unit: mm Collector-base voltage (Emitter open) 2SD1262 VCBO 2SD1262A Unit 60 V 2 80 Collector-emitter voltage 2SD1262


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    2002/95/ec2sd12622sd1262a2sb0939+22sb0939apc6-080 PDF

    2SD1261

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


    Original
    2002/95/ec2sd12612sd1261a2sb0938+12sb0938a PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 (7.6)


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    2002/95/ec2sd12602sd1260a2sb0937+12sb0937a PDF

    2SD1267

    Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
    Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290


    OCR Scan
    2sd12672sd1267a2sd12682sd1270+92sd12712sd1271a2sd12722sd1279sc-622sd12802sd12732sd1273a2sd1274 PDF

    2SD1264

    Abstract: 2SB0940 2SB0940A 2SB940 2SB940A 2SD1264A
    Contextual Info: Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification For TV vertical deflection output Complementary to 2SB0940 2SB940 and 2SB0940A (2SB940A) ● • Absolute Maximum Ratings (TC=25˚C) Parameter


    Original
    2sd12642sd1264a2sb09402sb940+22sb0940a2sb940a PDF

    2SB937

    Abstract: 2SB937A 2SD1260 2SD1260A
    Contextual Info: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A Unit: mm VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A dissipation Ta=25°C


    Original
    2sd12602sd1260a2sb9372sb937a PDF

    2SB0937

    Abstract: 2SB0937A 2SD1260 2SD1260A
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 2SD1260 Symbol Rating Unit VCBO 60 V 2SD1260A 80 Collector-emitter voltage 2SD1260


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    2002/95/ec2sd12602sd1260a2sb0937+12sb0937a PDF