2SD1261A Search Results

2SD1261

Abstract: NPN triple diffused 60V 2SB938 2SB938A 2SD12 2SD1261A
Contextual Info: P o w er T ra n s is to rs 2SD1261, 2SD1261A 2SD 1261, 2S D 1261A P ackage Dim ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max I— 8.7 max. U m ax. 6 .5 max. Pow er Amplifier C om plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A

2SB0938

Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SB0938, 2SB0938A 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB0938A –5 V Peak collector current ICP –8 A Collector current

2SD1261

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

2SB0938

Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB0938 2SB938 and 2SB0938A (2SB938A) • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE

2SB938

Abstract: 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB938 and 2SB938A • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

Contextual Info: Power Transistors 2SD1261, 2SD1261A 2SD1261, 2SD1261A P ackage Dim ensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max 8.7 max. I—-*• l.l.m ax 6.5 max. Pow er Am plifier C o m plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A _n

2SB938

Abstract: 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB938A –60 VCEO –80 10.0±0.3 V –5 V Peak collector current ICP –8 A Collector current

2SB0938

Abstract: 2SB0938A 2SD1261 2SD1261A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C

2SB0938

Abstract: 2SB0938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open 2SD1261 Symbol Rating Unit VCBO 60 V 2SD1261A

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5

2SB0938

Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 1.0±0.1 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V −80 −60 VCEO Emitter-base voltage (Collector open)

SILICON COMPLEMENTARY transistors darlington

Abstract: 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0938A 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 (7.6) Rating 2SB0938 1.5+0 –0.4 1 Symbol

2SB962

Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Contextual Info: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB902

Abstract: 2SB938 2SB937 2SB937A 2SB938A 2SD1260 2SD1260A 2SD1261 2SD1261A Scans-00138099
Contextual Info: PANASONIC INDL/ELEKiSEMI} 75C I> | b*i35flSM h^>S>7/9 6 | * 2SB902 2SB902 '> ij □ y P N P i l f ^ y y \s~7\s— - y i & / Si P N P Epitaxial Planar —iSiiiH iffl/G eneral Amplifier • 1# M /F e a tu r e s • x. I • 3 L- ? ? ■J)L i •■/ i't&fD'ffiffi VCK sat) A 'tlt'.'o/Low V ,h(SBl)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Unit VCBO −60 V 2 −80 Collector-emitter voltage 2SB0938

ESM2040DV

Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50

2SD1204

Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202

2SB0938

Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 2 (7.6) Collector-base voltage 1 Symbol 0 to 0.4