2SD1261 Search Results

2SD1261

Abstract: NPN triple diffused 60V 2SB938 2SB938A 2SD12 2SD1261A
Contextual Info: P o w er T ra n s is to rs 2SD1261, 2SD1261A 2SD 1261, 2S D 1261A P ackage Dim ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max I— 8.7 max. U m ax. 6 .5 max. Pow er Amplifier C om plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A

2SB0938

Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SB0938, 2SB0938A 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB0938A –5 V Peak collector current ICP –8 A Collector current

2SD1261

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

2SB0938

Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB0938 2SB938 and 2SB0938A (2SB938A) • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE

2SB938

Abstract: 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB938 and 2SB938A • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

Contextual Info: Power Transistors 2SD1261, 2SD1261A 2SD1261, 2SD1261A P ackage Dim ensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max 8.7 max. I—-*• l.l.m ax 6.5 max. Pow er Am plifier C o m plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A _n

2SB938

Abstract: 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB938A –60 VCEO –80 10.0±0.3 V –5 V Peak collector current ICP –8 A Collector current

2SB0938

Abstract: 2SB0938A 2SD1261 2SD1261A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C

2SB0938

Abstract: 2SB0938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open 2SD1261 Symbol Rating Unit VCBO 60 V 2SD1261A

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5

2SB0938

Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 1.0±0.1 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V −80 −60 VCEO Emitter-base voltage (Collector open)

SILICON COMPLEMENTARY transistors darlington

Abstract: 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0938A 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 (7.6) Rating 2SB0938 1.5+0 –0.4 1 Symbol

2SB962

Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Contextual Info: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»

2SB600 NEC

Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
Contextual Info: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200

B938A

Abstract: B939A 2SK1967 2SD1316
Contextual Info: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5