2SB945 Search Results

2SD1270

Abstract: npn 2a 2SB945
Contextual Info: Inchange Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Large collector current IC ・Complement to type 2SB945 APPLICATIONS ・For power switching applications

2SB945

Abstract: 2SD1270
Contextual Info: SavantIC Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Large collector current IC ·Low collector saturation voltage ·Complement to type 2SD1270 APPLICATIONS ·For power switching applications

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 14.0±0.5 Parameter Symbol

PNP 100V 2A

Abstract: 2SB945 2SD1270
Contextual Info: Inchange Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1270 APPLICATIONS ・For power switching applications

2SB945

Contextual Info: Power Transistors 2SB945 2SB945 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD127Q . *-* U n it mm 4 .¿m ax. 10-2max. • Features 2.9 max. • L ow c o lle c to r -e m itte r s a tu ra tio n v o lta g e V ce <ssd

2SB0945

Abstract: 2SB945 2SD1270
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB0945

Abstract: 2SB945 2SD1270
Contextual Info: Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 2SB945 Unit: mm ● • 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage

2SD1270

Abstract: 2SB945
Contextual Info: Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB945 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage

2SB0945

Abstract: 2SB945 2SD1270
Contextual Info: Power Transistors 2SB0945 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Unit: mm ● • 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

Contextual Info: Power J ransistors 2SD1270 2SD1270 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SB945 • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o lta g e • G ood lin e a rity of DC c u r r e n t gain

2SB945

Abstract: 2SD1270
Contextual Info: JMnic Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1270 APPLICATIONS ・For power switching applications PINNING PIN

2SB945

Abstract: 2SD1270
Contextual Info: Power Transistors 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SB0945

Abstract: 2SB945 2SD1270
Contextual Info: Power Transistors 2SB0945 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)

2SD1270

Abstract: 2SB945
Contextual Info: SavantIC Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Large collector current IC ·Complement to type 2SB945 APPLICATIONS ·For power switching applications

2SB945

Abstract: 2SD1270
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB945 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1270 APPLICATIONS

2SB945

Abstract: 2SD1270
Contextual Info: 2SD1270 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SB945 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)

2SB945

Abstract: 2SD1270
Contextual Info: 2SB945 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SD1270 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)

2sb945

Contextual Info: P ow er T ransistors 2SB945 2SB945 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD127Q • Features • Low c o lle c to r-e m itte r sa tu ra tio n v o lta g e V c e <ssd • G ood lin earity o f DC c u r r e n t gain (Iife )

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3