2SB0937A Search Results

2SB0937

Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SB0937 2SB937 , 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −2 A Peak collector current

2SB0937

Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm 1.0±0.1 2SB0937 Symbol Rating Unit VCBO −60 V −80 2SB0937A −60 Collector-emitter voltage 2SB0937

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Rating Unit VCBO −60 V −80 2SB0937A Collector-emitter voltage 2SB0937 (Base open)

TRANSISTOR 10003

Abstract: 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SB0937, 2SB0937A 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB0937A 10.0±0.3 Unit: mm –60 V –80 Emitter to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 VCEO Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 VCEO Emitter-base voltage (Collector open)

2SB0937

Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB0937 2SB937 and 2SB0937A (2SB937A) VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 (7.6)

2SB0937

Abstract: 2SB0937A 2SD1260 2SD1260A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 2SD1260 Symbol Rating Unit VCBO 60 V 2SD1260A 80 Collector-emitter voltage 2SD1260

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD1260

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 (7.6)

2SB0937

Abstract: 2SB0937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 7.6 Parameter 1 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1