2SB0937 Search Results

2SB0937

Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SB0937 2SB937 , 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −2 A Peak collector current

2SB0937

Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm 1.0±0.1 2SB0937 Symbol Rating Unit VCBO −60 V −80 2SB0937A −60 Collector-emitter voltage 2SB0937

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Rating Unit VCBO −60 V −80 2SB0937A Collector-emitter voltage 2SB0937 (Base open)

TRANSISTOR 10003

Abstract: 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SB0937, 2SB0937A 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB0937A 10.0±0.3 Unit: mm –60 V –80 Emitter to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 VCEO Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 VCEO Emitter-base voltage (Collector open)

2SB0937

Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB0937 2SB937 and 2SB0937A (2SB937A) VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 (7.6)

2SB0937

Abstract: 2SB0937A 2SD1260 2SD1260A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 2SD1260 Symbol Rating Unit VCBO 60 V 2SD1260A 80 Collector-emitter voltage 2SD1260

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

SILICON COMPLEMENTARY transistors darlington

Abstract: 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0938A 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 (7.6) Rating 2SB0938 1.5+0 –0.4 1 Symbol

2SD1260

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 (7.6)

MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>

2SB0937

Abstract: 2SB0937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 7.6 Parameter 1 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1

2SC5224

Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions U Type (D36) TO-126 (D49 * , D50) MT3 Type (D40) MT4 Type (D41) TO-202 (D51) T0-220(a) (D52) TO-220F (D55) 2SC1398A