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2N358 Datasheets (260)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N358	Germanium Power Devices	Germanium NPN Transistors	Scan	PDF	57.83KB	1
2N358	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	71.82KB	1
2N358	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	35.33KB	1
2N358	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	83.26KB	1
2N358	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	45.73KB	1
2N358	Unknown	GE Transistor Specifications	Scan	PDF	37.54KB	1
2N358	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	142.36KB	1
2N358	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	136.16KB	1
2N358	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	97.88KB	1
2N358	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	106.46KB	1
2N358	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	92.8KB	1
2N358	Unknown	Vintage Transistor Datasheets	Scan	PDF	48.63KB	1
2N358	RCA	RCA Transistor and Diode Data	Scan	PDF	39.66KB	1
2N3580	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	82.05KB	1

2N3580	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	35.33KB	1
2N3580	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	85.04KB	1
2N3580	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	50.25KB	1
2N3580	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	54.76KB	1
2N3580	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	165.73KB	1
2N3580	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	107.24KB	1

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2N358 Price and Stock

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Microchip Technology Inc JANTXV2N3583 Power BJT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	JANTXV2N3583					1 - 10 - 100 $216.85 1000 $216.85 10000 $216.85	Buy Now
Avnet Americas	JANTXV2N3583	Bulk		50 Weeks	50	1 - 10 - 100 $231.89 1000 $217.22 10000 $217.22	Buy Now
Newark	JANTXV2N3583	Bulk			500	1 - 10 - 100 - 1000 $240.24 10000 $240.24	Buy Now
Microchip Technology Inc	JANTXV2N3583			28 Weeks		1 $240.24 10 $240.24 100 $240.24 1000 $240.24 10000 $240.24	Buy Now
Microchip Technology Inc 2N3583 Transistor - NPN Silicon - Medium Power - 175V - 1A -
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	2N3583					1 - 10 - 100 $25.04 1000 $25.04 10000 $25.04	Buy Now
Avnet Americas	2N3583	Bulk		50 Weeks	100	1 - 10 - 100 $28.01 1000 $25.86 10000 $25.53	Buy Now
Newark	2N3583	Bulk			500	1 - 10 - 100 - 1000 $31.06 10000 $31.06	Buy Now
Microchip Technology Inc	2N3583			28 Weeks		1 $28.24 10 $28.24 100 $28.24 1000 $28.24 10000 $28.24	Buy Now
Onlinecomponents.com	2N3583					1 - 10 - 100 $25.04 1000 $25.04 10000 $25.04	Buy Now
Microchip Technology Inc JANTX2N3583 Power BJT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	JANTX2N3583					1 - 10 - 100 $198.45 1000 $198.45 10000 $198.45	Buy Now
Avnet Americas	JANTX2N3583	Bulk		50 Weeks	50	1 - 10 - 100 $212.22 1000 $198.78 10000 $198.78	Buy Now
Newark	JANTX2N3583	Bulk			500	1 - 10 - 100 - 1000 $219.86 10000 $219.86	Buy Now
Microchip Technology Inc	JANTX2N3583			28 Weeks		1 $219.86 10 $219.86 100 $219.86 1000 $219.86 10000 $219.86	Buy Now
VPT Components JANTX2N3584 Single Bipolar Transistor, NPN, 250 V, 2 A, 35 W, TO-66, 2 Pins, Through Hole - Bulk (Alt: JANTX2N3584)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	JANTX2N3584	Bulk	1,826		1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TTI	JANTX2N3584	EDWF			10	1 - 10 $75.12 100 $75.12 1000 $75.12 10000 $75.12	Buy Now
Central Semiconductor Corp 2N3583 TIN/LEAD Transistor GP BJT NPN 175V 1A 2-Pin TO-66 Sleeve (Alt: 2N3583 TIN/LEAD)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N3583 TIN/LEAD				90	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N358 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N3585 Abstract: 2N3584 2N3584 JAN transistor 2n3584 MIL-PRF-19500/384 Contextual Info: TECHNICAL DATA 2N3584 JAN, JTX, JTXV 2N3585 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/384 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage	Original	2n3584 2n3585 mil-prf-19500/384 o-213aa +22n3584 jan transistor 2n3584	PDF
2N3583 Contextual Info: 2N3583 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2n3583 o213aa 1-aug-02	PDF
2N3584 Abstract: 2N3584 JANTX Contextual Info: 2N3584 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2n3584 o213aa 1-aug-02 2n3584 jantx	PDF
2N3585 Contextual Info: 2N3585 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2n3585 o213aa 1-aug-02	PDF
2n3441 Abstract: 2N3442 2N3439 2N3440 2N3583 2N3584 2N3585 Contextual Info: HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 TO-39 <2A Package •c V CE0 Volts 2N3440 250 2N3584 2N3585 300 2N3439 350 TABLE 5 - NPN HIGH VOLTAGE TRANSISTORS The transistors shown ¡n this table are characterised for high voltage operation in industrial, commercial	OCR Scan	2n3441 2n3442 2n3583 2n3440 +32n3584 2n3585 2n3439	PDF
mje 3001 Abstract: MJ3583 2N3583 MOTOROLA MJ3585 MJ3701 2N3583 MJ2253 MJ3760 MJ3761 transistor SE 431 Contextual Info: MJ3583 thru MJ3585 SILICON MJ3701 (SILICON) p o r specifications, §ee 2N3583 Data. For Specifications, See MJ2253 Data. MJ3760 (silicon) MJ3761 H O RIZO N TAL D E FL E C T IO N SILICO N TR A N SISTO R S 6.0/8.0 AM PERE T R IP L E D IFF U S E D POWER TR A N S IS TO R S	OCR Scan	mj3583 mj3585 2n3583 mj3701 +7mj2253 mj3760 mj3761 16-collector-base mje 3001 2n3583 motorola transistor se 431	PDF
X9116WM8I-2.7T1 Abstract: 2N6315 Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 Vceo Ic sus (max) VOLTS AMPS ^FE IC/ Vce (min/max @ A/V) fx (MHz) l@.5/.05 75 3 1 40-200@.5/10 5@1/.125 35 10 300h 5 25-100@1/10 .75@1/.125 35 10 2N3585A 400h 5 25-100@1/10 .75@1/.125 35 10 2N3738	OCR Scan	2n3054a 2n3583 2n3584a 2n3585a +82n3738 2n3739a 2n3766a 2n3767a 2n3878 2n3879a x9116wm8i-2.7t1 2n6315	PDF
2N6315 Abstract: 2n3054a Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 PA C K A G E D E V IC E T Y PE ^C E O sus V O LTS Ic (m ax) AM PS NPN TO-66 2N 3054A 55 4 25-100@ .5/4 2N3583 250h 1 2N 3584 300h 2N 3585 hfE@ i< y v Ce (m in/m ax @ A/V) ^CE<s»l) Pr D * W A TTS fr	OCR Scan	2n3583 2n4911 2n5661 2n5665 +32n6315 2n6373 2n3054a	PDF
2N3584 Contextual Info: 2N3584 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE TO - 66 2.0 A 250 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C	OCR Scan	2n3584 rad8-89	PDF
Contextual Info: m 2N3585 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3585 is Designed fo r G eneral P urpose High V oltage A m p lifie r and Switching A pplications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES lc 2.0 A V ce 300 V P diss 35 W @ Tc = 25 °C Tj -65 °C to +200 °C	OCR Scan	2n3585	PDF
2N3584 Abstract: 2N3585 transistor 2n3584 Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/384 Devices Qualified Level 2N3584 JAN JANTX JANTXV 2N3585 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current	Original	mil-prf-19500/384 2n3584 2n3585 transistor 2n3584	PDF
2N4240 Abstract: 2N3583 2N3584 2N3585 2N6420 2N6421 2N6422 2N6423 2N6420-2N6421 Contextual Info: COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS NPN 2N3583 2N3584 2N3585 2N4240 . designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,switching regulators,convertors, deflection stages and high fidelity amplifiers.	OCR Scan	2n3583 2n6420 2n3584 2n6421 +52n3585 2n6422 2n4240 2n6423 2n6420-2n6421	PDF
Contextual Info: 2N3583 Complementary medium-power high voltage power transistor 6.1. 1 of 1 Home Part Number: 2N3583 Online Store 2N3583 Diodes C o m plem entary m edium - po w er high v o ltage po w er t rans is to r	Original	2n3583 com/2n3583	PDF
vbe 10v, vce 500v NPN Transistor Abstract: 2N3585 Contextual Info: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N3585 APPLICATIONS: • • • Off-Line Inverters Switching Regulators Motor Controls • • • Deflection Circuits DC-DC Converters High Voltage Amplifiers	Original	2n3585 msc1057 vbe 10v, vce 500v npn transistor	PDF

Contextual Info: 2N3585 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)500 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2n3585 freq10m	PDF
200V transistor npn 10a Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN Contextual Info: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER	Original	2n3583 2n3584 2n3585 500ma +6200ma 100ma 200v transistor npn 10a transistor 200v 100ma npn 200v 10a npn transistor 200v 100ma npn	PDF
Contextual Info: 2N358 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.50	Original	2n358	PDF
npn transistor to-66 Abstract: 2N3584A TRANSISTOR 751 2N3054A 2N3879A 2N3584 2n3767 2N3583 2N3738 2N3878 Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 V ceo Ic DEVICE TYPE sus VOLTS (max) AMPS NPN TO-66 2N3054A 55 4 25-100@.5/4 2N3583 250h 2N3584A T ir ^ * Tc = 25UC h V»CER VcE(j»t) @ I c^Ib (V@ A/A) lFE@ V V ce PACKAGE (min/max @ A/V) p • D	OCR Scan	2n3054a 2n3583 2n3584a 2n3585a +102n3738 2n3739a 2n3766a 2n3767a 2n3878 2n3879a npn transistor to-66 transistor 751 2n3584 2n3767	PDF
2N3738 equivalent Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912	Original	2n3054 2n3054a 2n3583 2n3584 +72n3585 2n3738 2n3739 2n6049 2n6420 2n6421 2n3738 equivalent	PDF
2N3585 Contextual Info: SavantIC Semiconductor Product Specification 2N3585 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25 ·VCE SAT =0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS ·High speed switching and linear amplification	Original	2n3585	PDF
2N3583 Abstract: 2N4240 2N36 2N35 Contextual Info: 2N3583 2N3584* 2N3585* 2N4240 *also available as i? t/V E sr JAN, JANTX, JANTXV HIGH-VOLTAGE SILICON N-P-N TRANSISTORS For High-speed Switching and Linear-Amplifier Applications Features • 100-percent tested to assure freedom from second breakdown in both forwardand reverse-bias conditions when operated within specified limits	OCR Scan	2n3583 2n3584 2n3585 2n4240 +3100-percent 2n36 2n35	PDF
2N3534 Abstract: 2N3583 2N3584 2N3533 2N3563 2N3503 2N3585 2n358s N3584 2N3584 NPN Contextual Info: 2N3583 2N3584 2N3585 NPN SILICON HIGH VOLTAGE POWER TRANSISTORS 35 watts at 25°C 5A peak collector current OUTLINE DIMENSIONS mm TO-66 915 min. - — - — 1 90 max. 1 1 Î 12.65 max. 0.85 0.70 T — — 8 .64 max ABSOLUTE MAXIMUM RATINGS v cso Collector-base voltage {lE — 0)	OCR Scan	2n3583 2n3584 2n3585 2n3503 +82n3s84 2n358s 2n35s3 2n3534 2n3533 2n3563 n3584 2n3584 npn	PDF
Contextual Info: 2N3585 COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE P. 1 of 1 Home Part Number: 2N3585 Online Store 2N3585 Diodes C O M PLEM ENTARY Transistors M EDIUM - PO WER HIG H VO LTAG E PO WER TRANSISTO RS Integrated Circuits	Original	2n3585 com/2n3585	PDF
Contextual Info: 2N3582 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)30m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2n3582	PDF

2N358 Search Results

2N358 Datasheets (260)

2N358 Price and Stock

Microchip Technology Inc JANTXV2N3583

Microchip Technology Inc 2N3583

Microchip Technology Inc JANTX2N3583

VPT Components JANTX2N3584

Central Semiconductor Corp 2N3583 TIN/LEAD

2N358 Datasheets Context Search

2N3585

2N3583

2N3584

2N3585

2n3441

mje 3001

X9116WM8I-2.7T1

2N6315

2N3584

2N3584

2N4240

vbe 10v, vce 500v NPN Transistor

200V transistor npn 10a

npn transistor to-66

2N3738 equivalent

2N3585

2N3583

2N3534