2N5096 Search Results

L0050A

Abstract: 2N5096A lt 0210 2N5091A 2N5093A 2N5094A
Contextual Info: HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS TYPES 2N5091A, 2N5093A, 2N5094A 2N5096A Solid State Devices Incorporated 14 830 Valley V iew Avenue La Mirada, California 9 0 638 Telephone 213 9 2 1 -9 6 6 0 TW X -910-583-4807 Z

Contextual Info: 2N5096 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 450V 0.41 (0.016)

ic 23721

Abstract: 23732 23721
Contextual Info: Micmsemi PNP Transistors | Part Number ' PNP JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 2N5094 2N5096 2N3053 2N3774 2N3778 2N3245 2N3775 2N3779 2N3776 2N3780 2N3777 2N3781 2N3660 2N3661 2N3782 2N3719 2N3867 2N3867S

PNP TO-39

Abstract: 2N6191
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 pr D* ix 1.3@2.5/.25 6 60 >20@2.5/3 1.3@2.5/.25 6 60 1 20-200@. 1/15 3@.025/.0025 4 10* 350 1 20-200@.l/15 3@.025/.0025 4 10‘ 2N5094 400 1 20-200@.l/15 3@.025/.0025 4 10' 2N5096 450 1 20-200@.l/15

2N5094

Abstract: 2N5091 2N5096 2N5093 C178T Transistor 2N5093 2N5095 2N5097
Contextual Info: ÿ o & m l 2N5094 AND 2N5096 £ £ I D I I s)s>U»'ll 1 AMP HIGH VOLTAGE PNP TRANSISTOR 450-500 VOLTS 14830 Valley View Avenue La Mirada. Calitornia 90638 TW X 910-583-4807 FAX 213-921-2396 CASE STYLE W JEDECTO—5 FEATURES • BVCBO TO 500 V O LTS • LOW SATURATION VOLTAGE

transistor c 4058

Abstract: pnp 500v TO-205AA ic 4058 DATASHEET ic 4058 2N5096 C 4058
Contextual Info: 2N5096 MECHANICAL DATA Dimensions in mm inches HIGH VOLTAGE PNP TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. FEATURES 0.89 max. (0.035) • LOW SATURATION VOLTAGE 0.41 (0.016) 0.53 (0.021) dia. • LOW LEAKAGE AT HIGH TEMPERATURE

Contextual Info: 2N5096 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 450V 0.41 (0.016)

Contextual Info: 2N5096 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)450 V(BR)CBO (V)500 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: tJ zSsmi-Conauatoi ZPioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5096 HIGH VOLTAGE PNP TRANSISTOR 1 5s- 11 SEATINQ PLJWE FEATURES • LOW SATURATION VOLTAGE • LOW LEAKAGE AT HIGH TEMPERATURE

2n5096

Contextual Info: 2N5096 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 450V 0.41 (0.016)

E50U

Contextual Info: SOLI» STATE DEVICES INC 15E D Jù3t.bDll □ □ □ S U D □ | 2N5094 AND 2N5096 1 AMP HIGH VOLTAGE PNP TRANSISTOR 4 5 0 -5 0 0 VOLTS CASE STYLE W JEDECTO—5 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

PDTC

Abstract: 2N5282 2N3795 2N3868 2N4999 2N5001 2N5005 2N5281 2N5333 SFT5333
Contextual Info: PNP TRANSISTORS h F E @ 1C Device Type V C E O sus Volts Min 1 120 150 2N3795 2N5281 80 2N4999 2 25 SFT5333 2N3868 50 20 1.0 2.0 2.5 60 2.5 2.5 60 70 30 30 15 15 50 50 100 100 6 50 25 50 50 50 TO-59 TO-59 TO-5 TO-5 TO-5 2N5003 30 2N5005 2M6190 70 30 2.0

SMD transistor 562

Abstract: 562 SMD, 6 pin 562 smd ic 2N5094 2N5096 SFT5094 TO-5 amps pnp transistor
Contextual Info: SFT5094 and SFT5096 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP, 500 Volts High Voltage PNP Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/

pnp 50 VOLTS 5 amp smd TRANSISTOR

Abstract: 2N5096 2N5094 transistor smd P.D 1 SFT5094 TO-5 amps pnp transistor
Contextual Info: SFT5094 and SFT5096 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP, 500 Volts High Voltage PNP Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/

2N5415

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25

2N3743

Abstract: 2N4930 2N4931 2N5096 2N5282
Contextual Info: 3869720 G EN ER A L ' O I D D E CORP 07C 0 02 54 GENERAL DIODE CORP 07 D -p-33 - DE | 301^750 DDODSSM Ö | ~ SILICON N P N - Power Transistors rvP E i, M AX . TH ER M AL ;s Junction lo Cáse M AX. C O LL. DI SS. t< net A li 925* C A B S O L U T E M A X . R A T IN G S { » ' C .

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

741 IC

Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >25@2.5/3 1.3@2.5/.25 6 60 2N3868 60 3 >20@2.5/3 1.3@2.5/.25 6 60 2N4930 200 .05 20-200@.01/10 5@.01/.001 5 10* 2N4931 250 .05

2N5286

Abstract: 2N4236 2N4387 2N4388 2N4398 2N4399 2N4898 2N4899 2N4900 2N4901
Contextual Info: H P II PNP DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREiA K D O V VN V OLTAGE S SAT . V O L T A GES M<ax. h F: E CASE V CB VΠV EB (V) 'c (A) M in. Max. (A) 'b (A) V CE (V) V BE (V) 2N4236 TO -5 80 80 7 1 0.25 30 150 0.25 0.125 0.6 2 2N4387

MD14

Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990
Contextual Info: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p

1040B

Abstract: 2N3910 svt6062 2n5100
Contextual Info: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2n2222A

Abstract: pin configuration transistor 2N2222A transistor 2n2222a pnp transistor bipolar 2n2222a NPN transistor 2n2222A
Contextual Info: SÓLI» STATE DEVICES INC 3SE D • Ô3bbüll 00053Ü4 2 * S S I Dual & Quad Bipolar Transistors 25°C Elcctrical Characteristics Per Transistor Configuration ; PolaritylfV - IC: ••A'«' NPN/PNP 0.8/0.6 50/60 Dual Uncommitted Quad NPN Uncommitted 0.8 50