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    3515L Search Results

    3515L Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    65863-515LF
    Amphenol Communications Solutions Quickie Header, Wire to Board Connector, Double Row, 30 Positions, 2.54 mm (0.1 in.), Vertical, Eject Latch Header 0.76 um (30 u\\.) Gold Mating Plating. PDF
    10118744-1133515LF
    Amphenol Communications Solutions C - Commercial Series; Mezzanine Plug, SMT; 1mm Pitch; 7mm Mated Height, 15p PDF
    SF Impression Pixel

    3515L Price and Stock

    Samtec Inc

    Samtec Inc TSW-135-15-L-D

    Pin Header, Board-to-Board, Wire-to-Board, 2.54 mm, 2 Rows, 70 Contacts, Through Hole, TSW Series - Bulk (Alt: TSW-135-15-L-D)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TSW-135-15-L-D Bulk 1 Weeks 1
    • 1 $4.87
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    • 100 $4.87
    • 1000 $2.84
    • 10000 $1.97
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    Newark TSW-135-15-L-D Bulk 429 1
    • 1 $5.06
    • 10 $4.87
    • 100 $4.44
    • 1000 $4.35
    • 10000 $4.35
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    Sager TSW-135-15-L-D 429 1
    • 1 $5.22
    • 10 $5.22
    • 100 $4.45
    • 1000 $3.07
    • 10000 $3.07
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    Samtec Inc TSW-135-15-L-Q

    Hdr, Brd-To-Brd, 2.54Mm, 70Pos; |Samtec, Inc. TSW-135-15-L-Q
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    Newark TSW-135-15-L-Q Bulk 1
    • 1 $5.60
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    • 100 $4.26
    • 1000 $4.18
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    Sager TSW-135-15-L-Q
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    Samtec Inc TSW-135-15-L-S

    Hdr, Brd-To-Brd, 2.54Mm, 35Pos; |Samtec, Inc. TSW-135-15-L-S
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    Newark TSW-135-15-L-S Bulk 1
    • 1 $2.27
    • 10 $2.13
    • 100 $1.75
    • 1000 $1.56
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    Samtec Inc TSW-135-15-L-T

    Hdr, Brd-To-Brd, 2.54Mm, 105Pos; |Samtec, Inc. TSW-135-15-L-T
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    Newark TSW-135-15-L-T Bulk 1
    • 1 $7.65
    • 10 $6.75
    • 100 $5.83
    • 1000 $5.71
    • 10000 $5.71
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    Samtec Inc HTSW-135-15-L-T

    Hdr, Brd-To-Brd, 2.54Mm, 105Pos; |Samtec, Inc. HTSW-135-15-L-T
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    Newark HTSW-135-15-L-T Bulk 1
    • 1 $8.15
    • 10 $7.18
    • 100 $6.19
    • 1000 $6.07
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    3515L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Tem ic 3515L/VN4012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number V BR DSS M in (V ) rosion) Max (Q) V c s u to iV ) I d (A ) V N 3515L 350 15 @ V G,s = 4.5 V 0.6 to 1.8 0.15 V N 40Î2L 400 12 @ V(3s = 4.5 V


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    vn3515l/vn4012l3515lp-38281--rev15-aug-94+1p-38281-- PDF

    4012L

    Contextual Info: 3515L/VN4012L_ VISHAY T Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M î n ( V ) r D S (o n) M a x ( Q ) V G S (th> ( V ) V 3515L 350 15 9 V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L


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    vn3515l/vn4012l_n3515lvn4012ls-04379--+316-jul-01vn3515l7vn4012l4012l PDF

    VN3515L

    Abstract: VN4012L
    Contextual Info: 3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS


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    vn3515l/vn4012lvn3515lvn4012l18-jul-08 PDF

    4012L

    Abstract: VN3515L VN4012L
    Contextual Info: 3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS


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    vn3515l/vn4012lvn3515lvn4012l08-apr-05+14012l PDF

    4012l

    Abstract: marking code diode 04 to-18 siliconix VN3515L VN4012L
    Contextual Info: 3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS


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    vn3515l/vn4012lvn3515lvn4012lnov-00+24012lmarking code diode 04 to-18 siliconix PDF

    sivn

    Contextual Info: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities


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    vn3515dsfp-vn3515a020209sivn PDF

    sivn

    Abstract: sivn fet 125OC VN3515 3515L
    Contextual Info: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    vn3515dsfp-vn3515a020209sivn+3sivn fet125oc3515l PDF

    4012L

    Contextual Info: 3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / ^DS ON ^GS(th) ^D(ON) Order Number / Package b v dgs (max) (max) (min) TO-39 TO-92 3 5 0V 15Q 1.8V 0.15A — V N 3 51 5L 4 0 0V 12Q 1.8V 0.15A V N 4 01 2B VN 4012L


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    vn3515lvn4012l4012l300ns PDF

    Contextual Info: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    vn3515dsfp-vn3515a102108 PDF

    220-10L

    Abstract: B250/220-25 B125/110-10 B80/70-10L fagor b380 Fagor B40/35-10 B40/35-10 B40 35-10 fagor b40 FAGOR B 380 C5000-3300
    Contextual Info: FAGÖR ELECTRONICS «E . - 3MSR3ES 0QQ0S03 T-23-G7 Silicon rectifier bridges in plastic case. 10 Amps, to 25 Amps. The plastic material carries U/L recognition 94V-0. Type Peak MaxAvgRect Input Inverse Current Voltage @ T=55°C Recommended Voltage T VRMS Vrrm


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    0q00s03fb1001b40/35-10fb1002+14b80/70-10fb1004b125/110-10fb1006b250/220-10fb1008220-10lb250/220-25b80/70-10lfagor b380fagor b40/35-10b40 35-10fagor b40fagor b 380 c5000-3300 PDF