VN66A Search Results

VN66AFD

Abstract: vn66a
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v

vn0606m

Abstract: b0808
Contextual Info: T e m ic siiiconix TN0601L, VN0606L/M, VN66AFI N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number TN0601L VN0606L VN0606M VN66AFD r DS on) 3@ VGS = 10 V 3@ VGS = 10 V 3@ VGS = 10 V 60 Features • • • • • Max (Q) 1.8 @ VGs = 10 V

Contextual Info: H tSffA VN66AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V BR|DSS o *D rX ’ (A 3 1.46 60 FRONT VIEW TO-220SD 1 SOURCE 2 GATE 3 & T A B -D R A IN Performance Curves: VNDQ06 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

gs 1117 ax

Abstract: VN66 TN0610L VN0606M
Contextual Info: Tem ic snlconlx_ TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (Q) V c S (th ) (V ) I d (A) TN0601L 1.8 @ V os = 10 V 0.5 to 2 0.47 VN0606L 3 @ V gs = 10 V 0.8 to 2 0.33

VN66AFD

Abstract: vn66 TO-220SD VN66AD vn66a VN66AF 100-C 7060V VN664
Contextual Info: S IL IC O N IX INC • lflE D incorporated H Siliconix flSSM73S DDlMObb 7 ■ VN66 SERIES N-Channel Enhancement-Mode MOS Transistors "P3°l-07 PRODUCT SUMMARY PART NUMBER V BR DSS TDS(ON) (il) (V) TO-22Q/TO-220SD >d (A) PACKAGE VN66AD 60 3 1.7 TO-220 VN66AFD

VN66AK

Abstract: VN67AK VN87
Contextual Info: tSztni-donductoi ^Ptoaueti, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VN35AK, VN66AK, VN67AK, VN98AK, VN99AK n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching

VN0606L

Abstract: VN66AFD TN0601L
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

52426

Contextual Info: MIC TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number ' BR DSS Min (V) rus(on) Max (Q) VGS(th) (V) I d (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ VGs - 10 V 0.8 to 2 0.33 VN0606M

VN66AK

Abstract: 98AK VN67 analog VN98AK VN99AK VN 98AK VN35AK VN67AK vn99ak.90v
Contextual Info: 5gnn VN35AK, VN66AK, VN67AK, VN98AK, VN99AK n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching • High current analog switches • High gain-bandwidth product • RF power amplifiers • Inherently temperature stable

VN66AFD

Abstract: TN0601L VN0606L VN0606M
Contextual Info: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2

vn66afd

Abstract: 0606L TN0601L VN0606L
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

VN66AFD

Abstract: VN66AF TN0601L VN0606L 0606l 7020.1
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

TO-237

Abstract: VN0606L VN66AFD VN0606M TN0601L
Contextual Info: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2

7020.1

Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V

mosfet vn66afd

Contextual Info: T em ic TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS M in (V) rDS(on) M a x (Q ) VGS(U.)(V) Id (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ V q s = 10 V 0.8 to 2 0.33 VN0606M 3@ VGS = 10V

VN66AFD

Abstract: VN0606M TN0601L VN0606L TN0610L
Contextual Info: TN0601L, VN0606L/M, VN66AFD Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L 60 VN0606M VN66AFD rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33

VN66AFD

Abstract: TN0601L VN0606L VN0606M
Contextual Info: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IVN5000TND

Abstract: vn30ab 1VN5001 vn66ak VN35AK IVN5000TNE IVN5000 VN99AK IVN5000TNF IVN5000TNG
Contextual Info: orciim ^ FEATURES IVN5000/1 TN Seri»* n-Channel Enhancementonode Vertical Power MOSFET These devices are non-zener improved equivalents of the follow ing series. • High speed, high current switching • High gain-bandwldth product • Inherently temperature stable

VN88AFA

Abstract: VN46AFA VN46AF VN66AF VN66AFA VN88AF VN40AFA
Contextual Info: VN46AFA Series 1.2 AMPERES 40-80 VOLTS RPS ON = 3.0, 4.0 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in

VN88AF

Abstract: VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

mospower cross vn66af

Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

irf540 TTL

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150