VN66AK
Abstract: VN67AK VN87
Contextual Info: tSztni-donductoi ^Ptoaueti, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VN35AK, VN66AK, VN67AK, VN98AK, VN99AK n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching
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VN66AK
Abstract: 98AK VN67 analog VN98AK VN99AK VN 98AK VN35AK VN67AK vn99ak.90v
Contextual Info: 5gnn VN35AK, VN66AK, VN67AK, VN98AK, VN99AK n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching • High current analog switches • High gain-bandwidth product • RF power amplifiers • Inherently temperature stable
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vn35akvn66akvn67akvn98ak+5vn99ak98akvn67 analogvn 98akvn99ak.90v
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IVN5000TND
Abstract: vn30ab 1VN5001 vn66ak VN35AK IVN5000TNE IVN5000 VN99AK IVN5000TNF IVN5000TNG
Contextual Info: orciim ^ FEATURES IVN5000/1 TN Seri»* n-Channel Enhancementonode Vertical Power MOSFET These devices are non-zener improved equivalents of the follow ing series. • High speed, high current switching • High gain-bandwldth product • Inherently temperature stable
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ivn5000/1ivn5000tndivn5001tndivn5000tne+11ivn5001tneivn5000tnfivn5001tnfivn5000tngivn5001tngvn30ab1vn5001vn66akvn35akivn5000vn99ak
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1n32451n3611gp1n3612gp1n3613gp+161n3614gp1n37251n3957gp1n4001gp1n4002gp1n4003gptca780tfk u 111 btfk u 4614 btfk s 186 ptfk u 217 btfk bp w 41 ntfk bpw 41 ntfk 880tfk 148tdsr 5150 g
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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t0-92options4206azvn4206czvn4206e+15zvn4306atn2106k1vn2210n3tn0606n3tn0606n6mosfet cross referencepj 929 diodepj 1229 diodebss250vn0109n5pj 66 diodepj 929bss295 "direct replacementbss295 "cross referencepj 69 diode
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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j-23548k24123i39-40inz3766+1153-c-03siliconix fettransistor e112 fet n-channeljfet transistor replacement guide j201e112 jfetjfet bfw10 terminalsjfet bfw10 specifications4856a mosfettransistor e112 fetfets in balanced mixers ed oxnerequivalent components fet bfw10
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IRF0120
Abstract: VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Clsa t, Min (S) Max (V) Max Max (s) (F) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 IXTH67N08 (A) IXTM67N08 (A)
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ixth67n08ixtm67n08ixth75n08ixtm75n08+15mte75n08vn0109n9bs170fvn0109n3vn0109n2irf0120vn0109n5vn99akirf012irf0122vn98aksvn98akvn-99-avn98ajk604
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VN66AK
Abstract: 99AK VN98AK VN66 VN35AK VN67AK VN99AK T0-205AD
Contextual Info: VN35AK Series G^MIF3°[MìS@ FUIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DM O S technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in
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vn66
Abstract: VN67AK
Contextual Info: <$Etni~L,onduetoi Lpioaueti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 VN35AK Series 1.2 AMPERES 35-90 VOLTS N-CHANNEL HELD EFFECT POWER TRANSISTOR CASE STYLE TO-205AD(TO-39) DIMENSION* ARE IN INCHH AND (MILLIMETCRS)
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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j-23548k28742pa 0016 pioneerpioneer pa 0016+8transistors br 6822mpf104i9951djohnson motor 2 607 022 0132sk109 equivalentv01000jdg5043ckirf4431
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