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VN30AB Datasheets (9)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
VN30AB		Intersil	Data Book 1981	Scan	PDF	92.23KB	2
VN30AB		Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	80.03KB	1
VN30AB		Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	43.08KB	1
VN30AB		Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	172.63KB	1
VN30AB		Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	142.69KB	1
VN30AB		Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	162.45KB	1
VN30AB		Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	120.97KB	1
VN30ABA		General Electric	Power Transistor Data Book 1985	Scan	PDF	101.76KB	2
VN30ABA		Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	120.97KB	1

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Intersil Corporation


Intersil Corporation VN30ABA POWER-MOS FET, FIELD EFFECT POWER TRANSISTOR, TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	VN30ABA		3			1 $15.00 10 $11.25 100 $11.25 1000 $11.25 10000 $11.25	Buy Now

VN30AB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
vn30ab Abstract: VN67ABA VN35ABA VN90ABA VN30ABA VN89ABA Contextual Info: VN30ABA Series PSMiFa-GffiQ MÛT 1.2 AMPERES 35-90 VOLTS r DS(ON = 2.5-5.0 Cl FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device ruggedness and reliability.	OCR Scan	vn30aba vn35aba vn67aba vn89aba +2vn90aba vn30ab	PDF
VN30AB Abstract: VN67AB VN89AB VN90AB VN35AB mosfet buffers output current 100mA VM67AB Contextual Info: VN30AB, VN35AB, VN67AB, VN89AB, VN90AB n-Channel Enhancement-mode Vertical Power MOSFET F EA T U R ES APPLICATIO N S • High speed, high current switching • Switching power supplies • Current sharing capability when paralleled • DC to DC inverters • Directly interface to CMOS, DTL, TTl. logic	OCR Scan	vn30ab vn35ab vn67ab vn89ab +4vn90ab vn67a8 mosfet buffers output current 100ma vm67ab	PDF
IVN5000TND Abstract: vn30ab 1VN5001 vn66ak VN35AK IVN5000TNE IVN5000 VN99AK IVN5000TNF IVN5000TNG Contextual Info: orciim ^ FEATURES IVN5000/1 TN Seri»* n-Channel Enhancementonode Vertical Power MOSFET These devices are non-zener improved equivalents of the follow ing series. • High speed, high current switching • High gain-bandwldth product • Inherently temperature stable	OCR Scan	ivn5000/1 ivn5000tnd ivn5001tnd ivn5000tne +11ivn5001tne ivn5000tnf ivn5001tnf ivn5000tng ivn5001tng vn30ab 1vn5001 vn66ak vn35ak ivn5000 vn99ak	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	eaton cm20a a5 gne mosfet hall sensor 44e 402 2n8491 +6ftg 1087 s triac bcr 10km feb3t smd transistor marking 352a sharp eia 577 sharp color tv schematic diagram mp-130 m mh-ce 10268	PDF
S0211 Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73 Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72	Original	2n7109 s0215 zvn3302b tn0102n3 +13tn0602n3 tn0102n2 tn0602n2 sof8104 s0211 vn03000 2sk738 nec 500t 2sk738 mosfet 3n175 mpf6659 motorola *6659 2sk73	PDF
mosfet cross reference Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is	Original	t0-92 options4206a zvn4206c zvn4206e +15zvn4306a tn2106k1 vn2210n3 tn0606n3 tn0606n6 mosfet cross reference pj 929 diode pj 1229 diode bss250 vn0109n5 pj 66 diode pj 929 bss295 "direct replacement bss295 "cross reference pj 69 diode	PDF
VN35AB Abstract: VN67AB VN89AB Contextual Info: , Una. VN3OAB, VN35AB, VN67AB, VN89AB, VN90AB 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching • Switching power supplies • Current sharing capability when paralleled	Original	vn35ab vn67ab vn89ab vn90ab +2vn30ab vim67a8	PDF
siliconix fet Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10 Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility	OCR Scan	j-23548 k24123 i39-40i nz3766 +1153-c-03 siliconix fet transistor e112 fet n-channel jfet transistor replacement guide j201 e112 jfet jfet bfw10 terminals jfet bfw10 specifications 4856a mosfet transistor e112 fet fets in balanced mixers ed oxner equivalent components fet bfw10	PDF