VN35AB
Abstract: VN67AB VN89AB
Contextual Info: , Una. VN3OAB, VN35AB, VN67AB, VN89AB, VN90AB 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching • Switching power supplies • Current sharing capability when paralleled
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vn35abvn67abvn89abvn90ab+2vn30abvim67a8
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VN30AB
Abstract: VN67AB VN89AB VN90AB VN35AB mosfet buffers output current 100mA VM67AB
Contextual Info: VN30AB, VN35AB, VN67AB, VN89AB, VN90AB n-Channel Enhancement-mode Vertical Power MOSFET F EA T U R ES APPLICATIO N S • High speed, high current switching • Switching power supplies • Current sharing capability when paralleled • DC to DC inverters • Directly interface to CMOS, DTL, TTl. logic
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vn30abvn35abvn67abvn89ab+4vn90abvn67a8mosfet buffers output current 100mavm67ab
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IVN5000TND
Abstract: vn30ab 1VN5001 vn66ak VN35AK IVN5000TNE IVN5000 VN99AK IVN5000TNF IVN5000TNG
Contextual Info: orciim ^ FEATURES IVN5000/1 TN Seri»* n-Channel Enhancementonode Vertical Power MOSFET These devices are non-zener improved equivalents of the follow ing series. • High speed, high current switching • High gain-bandwldth product • Inherently temperature stable
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ivn5000/1ivn5000tndivn5001tndivn5000tne+11ivn5001tneivn5000tnfivn5001tnfivn5000tngivn5001tngvn30ab1vn5001vn66akvn35akivn5000vn99ak
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VN88AF
Abstract: VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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irf640irf642irf630irf632+15irf620irf622vn1706dirf641irf643irf631vn88afvn89afvn66advn67advn88af siliconixvn46afvn66af2n6657vn0401d
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mospower cross vn66af
Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+13irf540irf632irf640mospower cross vn66afvn88afcross reference vn99abols 0492sj54 sonyirf5422n6658cross reference 2n6661vn0209n2vn88
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irf540 TTL
Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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irf640irf642irf630irf632+8irf620irf622vn1706dirf641irf643irf631irf540 ttlirf633
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Equivalent IRF 44
Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+12irf540irf632irf640equivalent irf 44irf630vn0106n5vn46vn0108n2buz44irf232irf240irf422
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VN99AB
Abstract: VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150
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irf640irf642irf630irf632+11irf620irf622vn1706dirf641irf643irf631vn99abvn66af2n6658vn46afirf633
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irf540 equivalent
Abstract: IRF541 equivalent vn89af equivalent IRF540 irf640 vn0106n1 VN0109n5 IRFF121 IRF232 IRF422
Contextual Info: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+12irf540irf632irf640irf540 equivalentirf541 equivalentvn89afequivalent irf540vn0106n1vn0109n5irff121irf232irf422
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2N6658
Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
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vn10kevn10leto-52vn2406m+16vn2410mvw1706mvn1710mvn1206mvn1210mvn0808m2n6658vn66afsiliconix vn10kmvn89afvn88af2n66572n6656vn67vn80afvn89ad
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ir 222
Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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irf640irf642irf630irf632+8irf620irf622vn1706dirf641irf643irf631ir 222irf633
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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S0211
Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72
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2n7109s0215zvn3302btn0102n3+13tn0602n3tn0102n2tn0602n2sof8104s0211vn030002sk738nec 500t2sk738 mosfet3n175mpf6659motorola *66592sk73
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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t0-92options4206azvn4206czvn4206e+15zvn4306atn2106k1vn2210n3tn0606n3tn0606n6mosfet cross referencepj 929 diodepj 1229 diodebss250vn0109n5pj 66 diodepj 929bss295 "direct replacementbss295 "cross referencepj 69 diode
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2N6658
Abstract: VN66AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150
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irf640irf642irf630irf632+9irf620irf622vn1706dirf641irf643irf6312n6658vn66afirf633
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VN66AF equivalent
Abstract: VN67AF equivalent mospower cross vn66af VN66AF 2N6658 IRF540 irf540 equivalent irf540 TTL VN67AF VN88AD
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+12irf540irf632irf640vn66af equivalentvn67af equivalentmospower cross vn66afvn66af2n6658irf540 equivalentirf540 ttlvn67afvn88ad
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irf 80 n
Abstract: irf 30A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220 S ilic o n ix
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o-220o-237o-202irf450+11irf840irf440vn5001d/irf830vnp002airf820vn5001a/irf430irf 80 nirf 30airf340irf350irf740
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2SJ54 sony
Abstract: VN0104N1 VN0108N2 VN0109n5 IRF232 IRF240 IRF422 IRF522 irf532 equivalent IRF632
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+11irf540irf632irf6402sj54 sonyvn0104n1vn0108n2vn0109n5irf232irf240irf422irf532 equivalent
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RELAY 1ZS
Abstract: VN1706D IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 // 1 / 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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irf640irf642irf630irf632+8irf620irf622vn1706dirf641irf643irf631relay 1zsirf633
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IRF640 equivalent
Abstract: irf630 irf640 IRF540 VN67AF VN0108N2 irf640 BUZ 72 A equivalent IRF232 IRF422 IRF632
Contextual Info: Siliconix 1-1? f l Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0
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o-220vn1000dirf522vn1000a+10irf540irf632irf640irf640 equivalentirf630 irf640vn67afvn0108n2buz 72 a equivalentirf232irf422
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VN66AF
Abstract: VN67AF VN46AF vn89af VN88AF 2N6658 IN400 VN46 IRF620 IRF630
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150
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irf640irf642irf630irf632+14irf620irf622vn1706dirf641irf643irf631vn66afvn67afvn46afvn89afvn88af2n6658in400vn46
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irf542 equivalent
Abstract: 2N6658 equivalent IRF640 FI IRF540 irf540 equivalent VN0108N2 2N865 CROSS REFERENCE 2n6661 VN46 IRF232
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+12irf540irf632irf640irf542 equivalent2n6658equivalent irf640 fiirf540 equivalentvn0108n22n865cross reference 2n6661vn46irf232
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VN88AD
Abstract: VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3
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vn10kevn10leto-52vn2406m+15vn2410mvw1706mvn1710mvn1206mvn1210mvn0808mvn88advn66af2n6658vn89afvn88aosiliconix vn10kmvn46afbsr67vn89ad
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vn30ab
Abstract: VN67ABA VN35ABA VN90ABA VN30ABA VN89ABA
Contextual Info: VN30ABA Series PSMiFa-GffiQ MÛT 1.2 AMPERES 35-90 VOLTS r DS(ON = 2.5-5.0 Cl FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device ruggedness and reliability.
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vn30abavn35abavn67abavn89aba+2vn90abavn30ab
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