93LC46B CIRCUIT DIAGRAM
Abstract: TRAC-S2Q16 93LC46B AN27 QSOP16 ZSM560 NM92C46
Contextual Info: TRAC SUPPORT CIRCUIT TRAC-S2 ISSUE 1 - JANUARY 2000 DEVICE DESCRIPTION The TRAC family of Field Programmable Analog Devices offers an integrated path from signal processing problems to working silicon solutions - in minutes! The Totally Reconfigurable Analog Circuit is a highly
|
Original
|
d-8167393lc46b circuit diagramtrac-s2q1693lc46b+4an27qsop16zsm560nm92c46
|
PDF
|
ZXM61N02F
Abstract: ZXM61N02FTA ZXM61N02FTC
Contextual Info: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
zxm61n02fzxm61n02ftazxm61n02ftc |
PDF
|
MO-187
Abstract: ZXMD63P02X ZXMD63P02XTA ZXMD63P02XTC
Contextual Info: ZXMD63P02X DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
zxmd63p02xzxmd6300mo-187zxmd63p02xta+1zxmd63p02xtc
|
PDF
|
Switched Mode Power Supply
Abstract: smps transformer design zetex smps TRAC AC to DC smps circuit diagram switched mode power smps
Contextual Info: TRAC Application Note 2 Issue 1 November 1996 Switched Mode Power Supply Adam Knight The Introduction timing parameters, i.e. the switching period and the width of the The power supply industry has seen a output pulse can readily be changed gradual movement away from the use
|
Original
|
switched mode power supplysmps transformer designzetex smpstrac+3ac to dc smps circuit diagramswitched mode powersmps
|
PDF
|
ZXMN3A01E6TC
Abstract: ZXMN3A01E6 ZXMN3A01E6TA
Contextual Info: ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.12⍀ D=3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
|
Original
|
zxmn3a01e6ot23-6zxmn3a01e6tazxmn3a01e6tc |
PDF
|
ZTX618
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 ISSU E 2 - JULY 1995_ FEATURES * 10A Peak pulse current * Excellent hFE characteristics up to10A pulsed * * Extrem ely low saturation voltage e.g. 7 m V typ. lc cont 3.5A
|
OCR Scan
|
to10aztx618ztx718 |
PDF
|
BF 235
Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
|
Original
|
ztx1147abf 235plc em 235ztx1147+1dsa003763
|
PDF
|
T6702
Abstract: complementary npn-pnp ZDT6702 IC1010 IC-175 DSA003725 ZETEX medium power complementary transistors
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 80
|
Original
|
zdt6702ot223t6702complementary npn-pnp+4ic1010ic-175dsa003725zetex medium power complementary transistors
|
PDF
|
T14P12DX
Abstract: MO-187 ZXT14P12DX ZXT14P12DXTA ZXT14P12DXTC DSA003747
Contextual Info: ZXT14P12DX SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 16m ; IC= -6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
|
Original
|
zxt14p12dxzxt14p12dxtat14p12dxmo-187+2zxt14p12dxtcdsa003747
|
PDF
|
MO-187
Abstract: ZXM64P03X ZXM64P03XTA ZXM64P03XTC DSA003665
Contextual Info: ZXM64P03X 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=-30V; RDS(ON)=0.075⍀ ID=-3.8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
zxm64p03xzxm64p03xtazxm64p03xtczxm4p03+3d-81673mo-187dsa003665
|
PDF
|
0116 Solar Lamp Controller
Abstract: 0116 Solar Lamp 0116 solar 4 pins 0116 solar D01608C-223 D03316P-223 NY TRANSISTOR MAKING LIST transistor 6835 ZXT14N20DX 2N2907
Contextual Info: ZXSC100 SINGLE CELL DC-DC CONVERTER SOLUTION DESCRIPTION efficiency over a wider range of load currents, several circuit configurations are possible with power dissipation up to 2W. The step up output voltage is easily programmed with external resistors, the
|
Original
|
zxsc1000116 solar lamp controller0116 solar lamp0116 solar 4 pins+70116 solard01608c-223d03316p-223ny transistor making listtransistor 6835zxt14n20dx2n2907
|
PDF
|
FMMT3904
Abstract: FMMT3903 FMMT3905 FMMT3906 DSA003692
Contextual Info: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 94 FMMT3903 FMMT3904 ✪ COMPLIMENTARY TYPES – FMMT3903 - FMMT3905 FMMT3904 - FMMT3906 PARTMARKING DETAIL – E C B FMMT3903 - 1W FMMT3904 - 1A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
|
Original
|
fmmt3903fmmt3904fmmt3905fmmt3906+1dsa003692
|
PDF
|
sot23-6 marking 718
Abstract: 718 SOT23 ZXT10P20DE6 ZXT10P20DE6TA ZXT10P20DE6TC DSA0037439
Contextual Info: ZXT10P20DE6 SuperSOT 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
|
Original
|
zxt10p20de6ot23-6sot23-6 marking 718718 sot23+3zxt10p20de6tazxt10p20de6tcdsa0037439
|
PDF
|
ZHB6790
Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790
|
Original
|
zhb6790ot223diagram of bf 494 transistortransistor bf 494+6dual transistors" pnp npntransistor ic 1a datasheet npntp4030dsa003728sm-8 bipolar transistornpn-pnp dual
|
PDF
|
|
|
F38A
Abstract: MO-187 ZXM64N02X ZXM64N02XTA ZXM64N02XTC DSA003664
Contextual Info: ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=20V; RDS(ON)=0.040 ID=5.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
zxm64n02xzxm64n02xtazxm64n02xtczxm4n02+4d-81673f38amo-187dsa003664
|
PDF
|
BCW70R
Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
Contextual Info: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 FEBRUARY 1995 PARTMARKING DETAILS DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C 1.10 0.043 D 0.37 0.53 0.0145 0.021 F 0.085
|
Original
|
bcw69bcw70bcw69rbcw70r+4-10ma-50ma720 sot23dsa003673
|
PDF
|
2P03
Abstract: MARKING 2p03 SOT23-6 ZXM62P03E6 ZXM62P03E6TA ZXM62P03E6TC zxm6* sot23-6 DSA003664
Contextual Info: ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=-30V; RDS(ON)=0.15⍀ ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
zxm62p03e6ot23-6zxm62p03e6tad-81673+52p03marking 2p03 sot23-6zxm62p03e6tczxm6* sot23-6dsa003664
|
PDF
|
150e-3
Abstract: bf 494 transistor ZTX1149A
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1149A ISSUE 1 - January 1997 FEATURES * VCEO = - 25V * 3 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
|
Original
|
ztx1149a150e-3bf 494 transistor |
PDF
|
sanyo OS-CON
Abstract: B806 IT 236 schaffner dc swinging choke 20SV68M 6SA150M n1 sot23 N2 SOT23-6 IRC 0805 sanyo CG
Contextual Info: ZXRD1000 SERIES HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple
|
Original
|
zxrd1000dr100sanyo os-conb806+8it 236 schaffnerdc swinging choke20sv68m6sa150mn1 sot23n2 sot23-6irc 0805sanyo cg
|
PDF
|
CA700
Abstract: SOIC20W ZXFBF04 ZXFBF05 ZXFBF08 ZXFBF08W20 ZXFBF08W20TC
Contextual Info: ZXFBF08 8 Channel Buffer Device APPLICATIONS DEVICE DESCRIPTION The ZXFBF08 is a low cost, high slew rate, octal buffer amplifier. Built using the Zetex CA700 technology, this buffer has a small signal bandwidth of greater than 100MHz and a 1 volt pk-pk bandwidth of greater than
|
Original
|
zxfbf08ca700100mhzsoic20w+4zxfbf04zxfbf05zxfbf08w20zxfbf08w20tc
|
PDF
|
ZXM61P03F
Abstract: ZXM61P03FTA ZXM61P03FTC S06A D0220
Contextual Info: ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-30V; RDS(ON)=0.35⍀; ID=-1.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
zxm61p03fzxm61p03ftazxm61p03ftcs06a+1d0220
|
PDF
|
91A SOT23
Abstract: 91A 10 ZXM61N03F ZXM61N03FTA ZXM61N03FTC
Contextual Info: ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.22⍀; ID=1.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
zxm61n03fzxm61n03fta91a sot2391a 10+1zxm61n03ftc
|
PDF
|
MO-187
Abstract: ZXM64N02X ZXM64N02XTA ZXM64N02XTC F38A ZXM64 ZXM4N02 S38A
Contextual Info: ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.040Ω; ID=5.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
|
Original
|
zxm64n02xzxm64n02xtazxm64n02xtcmo-187+4f38azxm64zxm4n02s38a
|
PDF
|
lnb schematic
Abstract: QSOP20 ZNBG3110 ZNBG3110Q20 ZNBG3111 ZNBG3111Q20 lnb schematic diagram
Contextual Info: FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION ISSUE 2 - APRIL 1998 DEVICE DESCRIPTION These devices are unconditionally stable over the full working temperature with the FETs in place, subject to the inclusion of the recommended gate and drain capacitors.
|
Original
|
znbg3110znbg3111lnb schematicqsop20+3znbg3110q20znbg3111q20lnb schematic diagram
|
PDF
|