ZDT6702 Search Results

T6702

Abstract: complementary npn-pnp ZDT6702 IC1010 IC-175 DSA003725 ZETEX medium power complementary transistors
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 – February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 80

Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 -F e b ru a ry 1997_ c ,ΠZ D B, c ,ΠZD C2 c r Z D b2 c2 IZ d ZD NPN e, Ez PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL - T6702 ABSOLUTE M A XIM U M RATINGS.

T6702

Abstract: wt3c
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 PROVISIONAL DATASHEET ISSUE B - NOVEMBER 1995 Cl LL - _ 1 _ 1Bi Ci l J Z _ 1 _ 1Ei c2 [nu OJ c?rn _ n NPN b2 PNP E2 PARTMARKING DETAIL - T6702 ABSOLUTE MAXIMUM RATINGS.

transistor d 140 g

Abstract: SM-8 BIPOLAR TRANSISTOR transistor PNP 5 w 75W npn F75w
Contextual Info: Section S: Bipolar Transistors D a rlin g to n T r a n s is to r s C om binations P0 _:? W l ZDT6702 ZDT6705 Polarity V CEO VCBO NPN V 60 V 80 PNP -60 -80 ICM •c 2.0 A 4 VcEtsat Max mV 1200 -2.0 -4 -1200 A h FE 2.0 at Ib mA 2 -2.0 -2 a Type fi) > 1 S M -8 N P N /P N P D sriington T

Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 - February 1997_ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage V CBO 80 -80 V Collector-E m itter Voltage V CEO

Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 – February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP Collector-Base Voltage VCBO 80 -80 V

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

FMMTL717TA

Abstract: FMMT723TA FMMT560TA
Contextual Info: DATE: 24th September, 2010 PCN #: 2024 PCN Title: Qualification of Additional Wafer Fabrication Facility for PNP Bipolar Junction Transistors and Qualification of Alternate Die Attach Material for SOT223 Packaged Products.

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

ZDT1049

Abstract: ZXT12N50DX NPN SOT23-6 sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 zdt705 transistor PNP 5 w ZDT751 DUAL TRANSISTOR
Contextual Info: Multichip Devices Dual Transistor Combinations Various transistor combinations have been developed to meet our customers requirements for reduced component count and smaller packaging, including dual transisitors and traditional H-bridge configurations consisting of two NPN and two

FTZ605

Abstract: ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92
Contextual Info: DIO 1943 BiPolar brochure Final Artwork 12/4/10 14:50 Page 2 BIPOLAR CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE TRANSISTORS 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: inquiries@diodes.com EUROPE SALES OFFICE

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

bss170

Abstract: BAT54S/SM NPN Transistor BC817-40 221 sot23 FMMD2837 FMMD2835 FMMD2836 FMMD2838 SM NPN Transistor BC817-40 F2T694B BAR99
Contextual Info: SuperSOT Series ^ A:1 HIGH CURRENT SuperSOT TRANSISTORS {PD=625mW) Pinout: 1-Collector, 2-Emitter, 3-Basa V cbo VCEO le P,o, Type V V mA mW 15 15 3000 625 VcE sat) hFE fl a tlc /V c E m A /V Max V at Iq/I b mA Typ MHz 200/- 3000 / 2 0.10 10 00 /1 0 120 1 5 0 /-

AEC-Q101

Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
Contextual Info: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC

zxczm800

Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
Contextual Info: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)