FMMT3905 Search Results

FMMT3906

Abstract: SOT213 FMMT3905 ferranti BFQ31 FMMT3903 FMMT3904 PNP 3906 SOT23 T3905 BCW2
Contextual Info: FERRANTI semiconductors FMMT3905 FMMT3906 PNP Silicon Planar General Purpose Switching Transistors D E S C R IP T IO N These d e vice s are intended fo r use in sm all and m edium sign a l a m p lifica tio n a p p lica tio n s fro m d.c. to radio frequencies.

FMMT3904

Abstract: FMMT3903 FMMT3905 FMMT3906 DSA003692
Contextual Info: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 94 FMMT3903 FMMT3904 ✪ COMPLIMENTARY TYPES – FMMT3903 - FMMT3905 FMMT3904 - FMMT3906 PARTMARKING DETAIL – E C B FMMT3903 - 1W FMMT3904 - 1A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

FMMT3905

Abstract: FMMT3906 FMMT3903 FMMT3904 DSA003692
Contextual Info: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS FMMT3905 FMMT3906 ISSUE 4 – MARCH 2000 SWITCHING CHARACTERISTICS at Tamb=25 °C unless otherwise stated PARAMETER FMMT3905 FMMT3906 SYMBOL FMMT3905 MIN MAX FMMT3906 MIN VCC=-3V, VBE(off)=-0.5V IC=-10mA, IB1=-1mA

FMMT3906

Abstract: FMMT3903 FMMT3904 FMMT3905
Contextual Info: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS FMMT3905 FMMT3906 SWITCHING CHARACTERISTICS at Tamb=25 °C unless otherwise stated PARAMETER SYMBOL FMMT3905 MIN MAX FMMT3906 MIN PARTMARKING DETAILS - FMMT3905 - 2W FMMT3906 - 2A CONDITIONS VCC=-3V, VBE(off)=-0.5V

Contextual Info: FMM T3905 FMM T3906 SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT3905 - 2W FMMT3906 - 2A ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb = 25°C

FMMT3905

Abstract: fmmt3906 FMMT3904 equivalent 1n916 equivalent
Contextual Info: FMMT3905 FMMT3906 SWITCHING CHARACTERISTICS at Tamb=25 C unless otherwise stated PARAMETER SYM BOL FMMT3905 MIN MAX Delay Time Rise Time td tr 35 35 Storage Time ts tf Fall Time UNIT CONDITIONS 35 35 ns ns Vcc=-3V, VBE(offr0.5V 1^-IOm A, lBi=-1mA (See Fig. 1)

Contextual Info: FMMT3905 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)175 I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.

1N 2907A

Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
Contextual Info: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCW31

Abstract: BCW31R BCW32R BCW33R BCV72 BCW32 BCW33 BFQ31 BFQ31A ferranti
Contextual Info: I BCW31 BCW32 BCW33 FERRANTI T IIsemiconductorsL NPN S ilic o n Planar Sm all S ignal Transistors D ESC R IP TIO N These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SO T-23 package these devices are designed specifically fo r use in thin and th ick Film

BCV72

Abstract: BCW29 BCW30 BCW31 BCW32 BFQ31 BFQ31A BFS20 BSS63 BSS64
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION T R A N S IS T O R S T R A N S IS T O R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW 60C BCW 60D BCW 61A BCW61B BCW 61C

m6 marking transistor sot-23

Abstract: C5 MARKING TRANSISTOR transistor marking code 7E SOT-23 transistor ad 1v TRANSISTOR a43 A12 marking ht3 SOT23 transistor cg sot-23 transistor G1 SOT-23 transistor sot-23 Marking AR
Contextual Info: FERRANTI semiconductors HT3 PNP S ilicon Planar H igh V o lta g e T ra n s is to r D E S C R IP T IO N T h is p la s tic e n c a p s u la te d tra n s is to r is d e s ig n e d fo r a n y a p p lic a tio n re q u irin g h ig h v o lta g e c a p a b ility a t re la tiv e ly lo w

kn sot23

Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
Contextual Info: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices

BCW70R

Abstract: general purpose complementary transistors 1a 50v BCW71 scw71 BCW69 BCW69R BCW70 BCW72 BFQ31 5P sot23
Contextual Info: FERRANTI semiconductors * BCW69 BCW70 PNP Silicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r lo w level, general purpose applications. Com plementary to th e BCW71 and BCW72. Encapsulated in th e popular SOT-23 package these devices

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

FMMT3904

Abstract: FMMT3903 FMMT3905 FMMT3906
Contextual Info: FMMT3903 FMMT3904 SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Noise Figure N FMMT3903 FMMT3904 SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS FMMT3903 FMMT3904 MIN. MIN. MAX. 6 MAX. 5 UNIT dB Delay Time td 35 35 ns

Contextual Info: PLESSEY SEMICOND/DISCRETE TS dF | 7 S 2 0 S 3 3 □ 0 0 4 citi3 0 | 7220533 PLESSEY SEMICOND/DISCRETE 95 D 0 4 9 6 3 SOT-23 TRANSISTORS PN P G E N E R A L P U R P O S E T '^ ^ ' 1 R A T IN G S A N D C H A R A C T E R IS T IC S at 25°C ambient temperature.

6CW 62

Abstract: BYM 268 6CW 59 CMR1U-02M CMSD4448 DAN202VAK bcw 918 CMPS5064 44H11 S02222
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 10BQ015 CMSH1-20ML CMR1U-02M CMSH1-40M EM 66 10MF2 10MQ040 EM EM 63 66 10MQ060 CMSH1-60M EM 66 1N6478 1N6479 CMR1-02M CMR1-02M EM EM 61 Code Selection Guide Industry Part Number Data Sheet 292

BAT 13003 D

Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836

marking k4

Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A

VHF Transistors

Abstract: BCS46B BCS47B FMMT415 BC846A BC846B BC850B BC850C BCV71 BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES GENERAL PURPOSE TRANSISTORS NPN v :E(sat) h FE min./max. „ at lç/V CE max at Ip/lg mA/volts Volts mA typ. MHz V CBO V CEO •c mA P,ot mW BC846A 80 65 100 350 1 1 0/22 0 2/5 0 .2 5 10/0.5 BC846B 80 65 100 350 2 0 0 /4 5 0 2/5

marking 31A sot-23

Abstract: marking 31A BFQ31 marking 31A sot BFQ31AR BFQ31R bf031a C5 marking code device marking code S4 SOT23 marking BH
Contextual Info: FERRANTI * semiconductors BFQ31 BFQ31A NPN Silicon Planar V H F /U H F Transistors DESCRIPTION These devices are intended fo r lo w noise, high frequency am plifier and o scillator applications. Encapsulated in the popular SOT-23 package these devices are designed sp ecifically fo r use in thin and thick film

BCV72

Abstract: BCW29 BCW30 BCW89 BCW89R BFQ31 BFQ31A BFS20 1G t 90 SOT-23 ferranti
Contextual Info: It I!semiconductors FERRANTI L BCW89 P N P S ilico n Planar Sm all S ig n a l Transistors! DESCRIPTION This device is applications. intended for low level, general purpose Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid