KSD560 Search Results

Contextual Info: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 150 V Collector-Emitter Voltage

KSB601

Abstract: KSD560
Contextual Info: KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE T O -2 2 0 • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cB O -1 0 0 Collector-Emitter Voltage

LC2000

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE TO-220 • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: NPN EPITAXIAL SILICO N DARLINGTON T R A N SIST O R KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 150 V Collector-Emitter Voltage

Contextual Info: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

EM 316

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO -220 • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSB601 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic VcBO S ym bol 150

Contextual Info: KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

Contextual Info: KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

KSB601

Abstract: KSD560
Contextual Info: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

KSD569

Abstract: KSB601 KSB708 KSD560 KSD568 C 3311 transistor
Contextual Info: ^SAMSUNG S E M I C O N D U C T O R m e I NC d I oaoTboa NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 T ~ LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol

Contextual Info: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol - 100 V Collector-Emitter Voltage

KSB601

Abstract: KSD560
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TR A NSISTO R KSD560 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE • C o m p le m e n t to KS B 601 A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o l le c to r-B a s e V o lta g e C h a r a c te r is tic

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,