470MH Search Results

P104W

Abstract: 2SC2104
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2104 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, P1=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VcC=15V, Pi=0.4W, f=470MHz

PO7C

Abstract: 2SC2380 2SC238
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 Unit in m m UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0 =12W Min. (f=470MHz, V C C=12.6V, Pi=3W) . 1 0 0 % T e s t e d f o r L o a d M i s m a t c h S t r e s s at A l l P h a s e A n g l e s w i t h 30:1 V S W R

2SC2379

Contextual Info: 2SC2379 SILICON NPN EPITAXIAL PLANAR TY P E Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=6W Min. (f=470MHz, VCC=12.6V, Pi=lW) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=12.5V, P0-6.5W, f=470MHz

KESTX01

Abstract: KESTX02
Contextual Info: KESTX01/KESTX02 At 900MHz Application Note AN4807 The KESTX01 and KESTX02 are designed for use in the 290-470MHz region, with a push-pull output stage designed to reduce second harmonic emissions when a suitable balanced output circuit is used. There is a

MAX2664

Abstract: MAX2665
Contextual Info: 19-5476; Rev 0; 8/10 TION KIT EVALUA BLE IL AVA A VHF/UHF Low-Noise Amplifiers Features The MAX2664 and MAX2665 are ultra-compact LNAs for VHF/UHF applications. These devices incorporate a broadband LNA with an integrated bypass switch. The MAX2664 covers the UHF frequency range from 470MHz

RA60H4047M1

Abstract: RA60H4047M1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

RA30H4047M

Abstract: RA30H4047M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

gzl50

Abstract: RA07N4047M RA07N4047M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4047 RA07N4047M 07N4047M RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to

MICRF102

Abstract: nu-horizons loop antenna ask 800 transmitter ic 747 pcb antenna transmitter ic transmitters
Contextual Info: 300-470MHz Transmitter IC Automatically Tunes Antenna Key Specifications ◆ ◆ ◆ ◆ 300MHz—470MHz –2dBm transmit power 5.75mA mean operating current 1µA standby current The Good Stuff ◆ Easy to manufacture — Automatic antenna tuning — Low component count

Contextual Info: GEC P LES S EY w , O c t o b e r 1994 ADVANCE INFORMATION S E M I C O N D U C T O R S D S 4 0 0 3 - 1.4 SL6610 DIRECT CONVERSION FSK DATA RECEIVER This device is an advanced direct conversion receiver for operation up to 470MHz. The design is based on the SL6609A

Contextual Info: TOSHIBA {DISCRETE/OPTOJ 9097250 T O SH IB A Sb DE I ^ O T T a S Q Q 0 Q 7 4 C14 b <D I S C R E T E / O P T O SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=25W Min.) (f=470MHz, V CC=12.6V, Pi=10W)

Contextual Info: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: B U R R -B R O W N > B B I Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • STABLE IN GAINS: > 2V/V The OPA651 is a low power, wideband voltage feed­ back operational amplifier. It features a bandwidth of 470MHz as well as a 12-bit settling time of only 16ns.

BS3550

Abstract: SAW resonator 433MHz 433MHz saw Based Transmitter Schematic 433 .92MHz RF PCB Receiver murata saw filter philips 433mhz receiver SIEMENS saw filter 2103d kesrx
Contextual Info: KESRX05 260 to 470MHz ASK Receiver with Power Down Preliminary Information DS5023 Issue 1.9 August 1999 Features Ordering Information ● ● ● ● ● ● ● In-band Interference Rejection 20dB max. 2103dBm Sensitivity IF BW = 470kHz AGC around LNA and Mixer

RA30H4047M

Abstract: RA30H gp 532 RA30H4047M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

Contextual Info: HA-2850 h a r r is S E M I C O N D U C T O R Ê M M • 470MHz, Low Power, High Slew Rate Operational Amplifier November 1996 Features Description • Low Supply The HA-2850 is a wideband, high slew rate, operational

Contextual Info: RF6514 RF65143.3V to 4.0V, 470MHz to 510MHz Transmit/Receive Module 3.3V TO 4.0V, 470MHz to 510MHz TRANSMIT/RECEIVE MODULE VReg VCC 2 GND GND GND 1 GND GND GND Package: LGA, 28-Pin, 5.5mm x 5.0mm 28 27 26 25 24 23 22 GND 21 GND 20 GND 19 GND Features Rx Insertion Loss: 1dB

SmartRF04

Abstract: MSP430FG4618 Features
Contextual Info: Contact Us | TI Worldwide: United States | my.TI Login GO Search by Part Number Search by Keyword GO All Searches TI Home > Semiconductors > RF/IF and ZigBee Solutions > Low Power RF ICs > Sub 1-GHz > CC1100E Evaluation Module 470MHz Status: ACTIVE Alert me about changes

RA07H4047M-101

Abstract: ra07h4047m
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4047M RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 400- to 470-MHz

RA13H4047M

Abstract: rf power amplifier circuit by 400-470mhz RF MODULE 435Mhz RF MOSFET MODULE RA13H4047M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

Mitsubishi transistor rf final

Abstract: RA03M4547MD 1538d RA03M4547MD-101 POUT38
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4547MD RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4547MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

transistor MOSFET 924 ON

Abstract: RF MOSFET MODULE RA45H4047M RA45H4047M-101 circuit diagram power amplifier 450w mitsubishi power module
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

Contextual Info: DIODES 25 TO K O 9' 4 * - Variable Capacitance Diodes Application For Communications Equipment Taping KV1811 vco 8 Single type C iv: 19.51-23.55 Csv: 2 .1 4 -2 .9 2 7.8 Typ. 1.8 8pF, 470MHz SOT23 • • KV1812 vco 8 Single type C iv: 14.50-17.50 Csv: 1 .6 4-2 .24

TN4-26011

Abstract: crystal oscillator 850mhz N04 U1 MICRF505 MICRF506 TSX-10A differential feed loop antenna
Contextual Info: MICRF507 470MHz to 510MHz Low-Power FSK Transceiver with +10dBm Power Amplifier General Description The MICRF507 is a fully integrated FSK transceiver with +10dBm power amplifier and transmit/receive switch. The device is targeted at automated meter reading AMR