2SC2336 Search Results

2SC2336

Abstract: 2SC2336B audio amplifier POWER TRANSISTORS 2SA1006 2SC2336A 2SA1006A 2SA1006B POWER TRANSISTORS Jmnic
Contextual Info: JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ・With TO-220 package ・Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING

2SC2336

Abstract: 2SC2336B audio amplifier POWER TRANSISTORS 2SC2336A 2SA1006 2SA1006A 2SA1006B POWER TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION •With TO-220 package ·Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

15 A PNP POWER TRANSISTOR

Abstract: 2SC2336B power transistor 2SA1006B
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -250Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336B APPLICATIONS

2sa1006

Abstract: 2SA1006B 2SA1006A 2SC2336 2SC2336A 2SC2336B
Contextual Info: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION •With TO-220 package ·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

2SC2336

Abstract: 2SC2336A 4 PIN TO 220 IC 2SA1006 2SA1006A 2SA1006B 2SC2336B
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ・With TO-220 package ・Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier

2SA1006

Abstract: 2SA1006A 2SC2336 2SA1006B 2SC2336B audio amplifier POWER TRANSISTORS 2SC2336A POWER TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION • ·With TO-220 package ·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

2SD1165A

Abstract: D 1163 A 2SD1084 D1138 2sc2373 2Sd1165 2sD1307 2SD1961 2SD1265 1170 T
Contextual Info: - 232 - m € Type No. € tt Maniif. =M H SANYO nt s TOSHIBA a b NEC 31 HITACHI m ± il FUJITSU ft T MATSUSHITA jr. H MITSUBISHI □ — A ROHM 2 S D 1135 <- s a 2 S D 1136 * s a 2 S D 1137 ✓ s a 2SD743A 2SD857 2SD1896 s a 2SC2336A 2SC2660 2SD1562A 2 S D 1138 ,

2SC2336

Abstract: 2sa1006 2SC2336A TRANSISTOR 2SC2336A transistor 2SA C2336B
Contextual Info: SEC SILICON POWER TRANSISTORS ELECTRON DEVICE 2SA1006,2SA1006A,2SA1006B 2SC2336,2SC2336A,2SC2336B AUDIO FREQUENCY POWER AMPLIFIER PNP/NPN SILICON EPITAXIAL TRANSISTOR BUILT IN EMITTER BALLAST RESISTORS D ESCRIPTIO N The 2SA1006, 2S A 1006A , 2SA1006B/2SC2336, 2SC2336A and 2SC2336B are silicon epitaxial transistors suited fo r use as

TRANSISTOR 2SC2336A

Abstract: 2SA1006A 2SC2336A TRANSISTOR 2SA1006A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006A DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336A APPLICATIONS

2SA1006

Abstract: 2SC2336 HIGH VOLTAGE PNP POWER TRANSISTOR TRANSISTOR 2SC2336 A Q P
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -180Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336 APPLICATIONS

2SA1006

Abstract: transistors 1U 2SA1006A 2SA1006B 2SC2336 2SC2336B
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1006 2SA1006A 2SA1006B S ilicon PNP Power Transistors D ESC R IPTIO N • With TO -220 package • Complement to type 2SC2336, 2SC2 336A, 2SC2336B APPLICATIO NS • Audio frequency power amplifier • High frequency power amplifier

2SA1006

Abstract: audio amplifier POWER TRANSISTORS 2SA1006A 2SA1006B 2SC2336 2SC2336A 2SC2336B POWER TRANSISTORS
Contextual Info: JMnic Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION ・With TO-220 package ・Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING

Contextual Info: 2SC2336 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)180 V(BR)CBO (V)180 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.

2sc2720

Abstract: 2SA1152 2SA603 2SC2719 S0233 NTC2335 2SC1280A 2SC2336 2SA1151 2SA100B
Contextual Info: 2SA1006,1006A.1006B/2SC2336,2336A,2336B 2SA1006,1006A,1006B/2SC2336,2336A,2336B P N P /N P N PNP/NPN Silicon Epitaxial Transistor EBT X ^ + '> 7 ; H ^ Audio Frequency Power Amplifier High Frequency Power Amplifier i& m ijz m tim im , æ m i& w t im m m 0 ^ *1 5 0 -5 0 0

2sa1154

Abstract: 2SC2719 2sc2720 2SC1280 2SA1152 2SA1151 2SA603 2SD1297 2SC943 NTC2335
Contextual Info: N E C ELECTRONICS INC C Transistors ET b4S7SES OOOblDl 1 STC iààau M i T -33- 0 / •Wim - W - I J .4 I U Ü Í I J W 3 B ! U W M P H 1 »VJW» '»J-M* 1 ■JM ■ r t n ïi « t i n t o • Darlington Power Transistors '^ U c VceoM (DC |A1 \ Package \

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC2291

Abstract: 2SC2320 2SC2338 2SC2285A-MA 2SA1010 2SC2289 2SC2318 2SC2329 2SC2286-KA 2SC2287-KA
Contextual Info: - 120 - m % Ta=25'C, *EP(iTc=25<C m % f t & m & VcBO Vc e o (V) (V) 1c ( d c ) (A) Pc Pc* (W) m i CBC\ vm 3x j? VcB (V) (Uk) , hF E (min) ft fê (max) tt (Ta=25‘ 1C) Ic / I e (A) Vc e (V) 2SC2287-KA Bn an Bn Bn 2SC2287-MA bm VHF PA 38 18 1.5 17 500 30

2SC2719

Abstract: 2sc2720 NTC2335 2SC1280A 2SA603 28c128 2SA1154 NTB601 NTC27 NTB795
Contextual Info: N E C ELECTRONICS INC STC C Transistors ET *fS*B U .Jjl.W bMSTSES DOOblOl 1 D atom [v j w -I»W1 -i»'. I.U I •JU iM à ta iiita iib É ttâ d K i • D arlington Pow er Transistors '"~'''S=-Jc DC [A] Vceom \ Package \ 60 TO-126 80 TO-126 3.0 2.0 1.5

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage, high-speed,pow«r switching in inductive circuit, they are particularly suited for 11 5 and 220 V

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

C312 diode

Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292