KTC9018 Search Results

0107MA

Abstract: KTC9018S
Contextual Info: SEMICONDUCTOR KTC9018S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E B L L 3 G H A 2 1 RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage

Contextual Info: SEMICONDUCTOR KTC9018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES 2011. 4. 4 Revision No : 3 1/1

KTC9018

Contextual Info: SEMICONDUCTOR KTC9018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B A FEATURES ・Small Reverse Transfer Capacitance : Cre=0.65pF Typ. . ・Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.

KTC9018

Abstract: high Power Amplifier 100mhz
Contextual Info: K EG SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC9018 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.65pF Typ. . • Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.

C9018

Abstract: transistor c9018 C9018 G c9018 transistor KTC9018 transistor C9018 PDF DOWNLOAD
Contextual Info: SEMICONDUCTOR KTC9018 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking 1 Device Name C9018 2 Lot No. 816 3 98.06.23 hFE Grade Revision No : H 00 Description KTC9018 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week

KTC9018

Abstract: high Power Amplifier 100mhz
Contextual Info: SEMICONDUCTOR KTC9018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B A FEATURES ・Small Reverse Transfer Capacitance : Cre=0.65pF Typ. . ・Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.

ktc9018 transistor

Abstract: KTC9018 high Power Amplifier 100mhz
Contextual Info: SEMICONDUCTOR KTC9018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C A FEATURES ᴌSmall Reverse Transfer Capacitance : Cre=0.65pF Typ. . ᴌLow Noise Figure : NF=2.2dB(Typ.) at f=100MHz.

KTC9018S

Abstract: MARKING SOT23 .BG bg marking
Contextual Info: SEMICONDUCTOR KTC9018S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BGF 2 1 Item Marking Description Device Mark BG KTC9018S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

2sc3205

Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 2SC3194 2sc3226 C4369 kta949 2sc3192
Contextual Info: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No V CEO A M RF 30 20 fT (T Y P M IN MAX NF (m W ) ^CE (V) (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 V CE (V) (dB) I 5.0 6 - 1 100 50 TO-92(M) F5 50 TO-92(C) F3 6 - 1 100

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773